2SK1837

2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1836, 2SK1837 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage K1836 K1837 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Symbol VDSS Ratings 450 500 ±30 50 200 50 250 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1836, 2SK1837 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage K1836 K1837 V(BR)GSS I GSS I DSS Symbol V(BR)DSS Min 450 500 ±30 — — Typ — — — — — Max — — — ±10 250 V µA µA I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 VGS(off) RDS(on) 2.0 — — |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 22 — — — — — — — — — — 0.08 0.085 35 8150 2100 180 80 250 550 220 1.1 620 3.0 0.10 0.11 — — — — — — — — — — S pF pF pF ns ns ns ns V ns I F = 50 A, VGS = 0 I F = 50 A, VGS = 0, diF / dt = 100 A / µs V Ω I D = 1 mA, VDS = 10 V I D = 25 A VGS= 10 V*1 I D = 25 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 25 A VGS = 10 V RL = 1.2 Ω Unit V Test conditions I D = 10 mA, VGS = 0 Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current K1836 K1837 Gate to source cutoff voltage Static drain to source on state resistance K1836 K1837 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test 3 2SK1836, 2SK1837 Power vs. Temperature 400 Maximum Safe Operation Area 1000 300 Operation in this area is limited by R DS (on) 10 10 µ 0m s s Pch (W) 300 100 Drain Current I D (A) 30 DC PW Op er ati Channel Dissipation = 1m 200 10 3 1 0.3 0.1 1 Ta = 25°C 10 s ms on (1 (T sh c= ot) 25 °C ) 100 K1836 K1837 0 50 100 Case Temperature 150 Tc (°C) 200 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 100 8V 10 V 80 Drain Current I D (A) 5.5 V 60 Drain Current I D (A) Pulse Test 6V 80 100 Typical Transfer Characteristics V DS = 20 V Pulse Test 60 40 5V 40 20 4.5 V V GS = 4 V 20 Tc = 75°C 25°C – 25°C 4 6 8 10 0 4 8 12 16 20 0 2 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 4 2SK1836, 2SK1837 Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 50 A Drain to Source Saturation Voltage VDS (on) (V) 4 Pulse Test Static Drain–Source on State Resistance R DS (on) ( Ω) 0.5 1 Pulse Test Static Drain to Source on State Resistance vs. Drain Current 3 0.2 0.1 0.05 V GS = 10, 15 V 2 20 A 1 I D = 10 A 0.02 0.01 0 4 8 12 16 20 5 10 20 50 100 200 500 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 50 Forward Transfer Admittance vs. Drain Current Tc = – 25°C Static Drain–Source on State Resistance R DS (on) ( Ω) Forward Transfer Admittance |y fs | (S) 0.4 20 25°C 75°C 10 5 0.3 0.2 I D = 50 A 20 A 2 1 0.1 10 A V DS = 20 V Pulse Test 1 2 5 10 20 50 0 –40 0 40 80 120 160 0.5 0.5 Case Temperature Tc (°C) Drain Current I D (A) 5 2SK1836, 2SK1837 Body to Drain Diode Reverse Recovry Time 1000 500 Capacitance C (pF) Ciss 10000 Ciss Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 200 100 50 di / dt = 100 A / µs V GS = 0, Ta = 25°C 1000 100 VGS = 0 f = 1 MHz 10 Crss 20 10 0.5 1 2 5 10 20 50 0 10 20 30 40 50 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics 500 V DD = 100 V Drain to Source Voltage V DS (V) 400 250 V 400 V 300 VDS 200 ID = 50 A 8 V GS 12 16 Gate to Source Voltage V GS (V) 2000 Switching Time t (ns) 1000 20 5000 Switching Characteristics . V GS = 10 V,V DD = 30 V . PW = 2 µs, duty 1 % td (off) 500 tf 200 tr 100 td (on) 100 V DD = 400 V 250 V 100 V 4 0 80 160 240 320 0 400 50 0.5 1 2 5 10 20 50 Gate Charge Q g (nc) Drain Current I D (A) 6 2SK1836, 2SK1837 Reverse Drain Current vs. Source Drain Voltage 100 Pulse Test Reverse Drain Current I DR (A) 80 60 40 20 V GS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) D=1 0.5 0.3 1 Tc = 25°C 0.2 0.1 0.05 0.02 0.1 0.03 0.01 0.01 10 µ 1 shot Pulse 100 µ 1m 10 m 100 m θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 0.5°C / W, Tc = 25°C PW D= T P DM T 1 PW 10 Pulse Width PW (S) 7 2SK1836, 2SK1837 Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout Vin 10 V 50 Ω 10 % 10 % Vin 10 % 90 % Waveforms . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf 8 Unit: mm 6.0 ± 0.2 5.0 ± 0.2 φ3.3 ± 0.2 20.0 ± 0.3 26.0 ± 0.3 20.0 ± 0.6 2.5 ± 0.3 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 1.0 0.6 +0.25 –0.1 2.8 ± 0.2 5.45 ± 0.5 3.8 7.4 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3PL — — 9.9 g 2SK1836, 2SK1837 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.