2SA1837

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1837 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·High Current-Gain Bandwidth Product ·Complement to Type 2SC4793 APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO IC Emitter-Base Voltage -5 V Collector Current-Continuous -1 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ -0.1 A 2 W PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature 20 150 ℃ ℃ Storage Temperature -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1837 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -230 V VCE(sat) VBE(on) ICBO IEBO Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V Base-Emitter On Voltage IC= -500mA ; VCE= -5V -1.0 V μA μA Collector Cutoff Current VCB= -230V ; IE=0 VEB= -5V; IC=0 -1.0 Emitter Cutoff Current -1.0 hFE DC Current Gain IC= -100mA; VCE= -5V 100 320 COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz 30 pF fT Current-Gain—Bandwidth Product IC= -100mA ; VCE= -10V 70 MHz isc Website：www.iscsemi.cn 2