2SK1838

2SK1838(L), 2SK1838(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline DPAK-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK1838(L), 2SK1838(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 250 ±30 1 2 1 10 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 250 ±30 — — 2.0 0.3 — — — — — — — — — — Typ — — — — — 0.5 5.5 60 30 5 5 6 10 4.5 0.96 160 Max — — ±10 100 3.0 — 8.0 — — — — — — — — — Unit V V µA µA V S Ω pF pF pF ns ns ns ns V ns I F = 1 A, VGS = 0 I F = 7 A, VGS = 0, diF/dt = 100 A/µs VGS = 10 V, ID = 0.5 A, RL = 60 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A *1 I D = 0.5 A, VGS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse test VGS(off) |yfs| RDS(on) Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 2 2SK1838(L), 2SK1838(S) Power vs. Temperature Derating 20 Maximum Safe Operation Area 10 Pch (W) 3 10 15 Drain Current I D (A) 1 DC O PW pe ra 10 = 1 0 s µ s µ Channel Dissipation 10 (T m s tio m c 10 0.3 0.1 Operation in this area is limited by R DS (on) n s (1 25 = sh °C ot ) ) 5 0.03 Ta = 25°C 0 50 100 Case Temperature 150 Tc (°C) 200 0.01 1 3 10 30 100 300 1000 Drain to Source Voltage V DS (V) Typical Output Characteristics 1.0 8V 10 V 0.8 Pulse Test Drain Current ID (A) Drain Current I D (A) 0.6 4.5 V 0.4 4V 0.2 V GS = 3.5 V 0 2 4 6 8 10 0 0.6 5V 6V 0.8 1.0 Typical Transfer Characteristics Pulse Test V DS = 10 V 0.4 0.2 Tc = 75°C 25°C – 25°C 2 4 6 8 10 Drain to Source Voltage V DS (V) Gate to Source Voltage V GS (V) 3 2SK1838(L), 2SK1838(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test Static Drain–Source on State Resistance R DS (on) (Ω ) 4 50 Pulse Test V GS = 10 V Static Drain to Source on State Resistance vs. Drain Current Drain to Source Saturation Voltage VDS (on) (V) 20 10 5 3 0.5 A 2 0.2 A 1 ID = 0.1 A 2 1 0 4 8 12 16 20 0.5 0.02 0.05 0.1 0.2 0.5 1 2 Gate to Source Voltage VGS (V) Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperaure 25 5 Forward Transfer Admittance vs. Drain Current Static Drain–Source on State Resistance R DS (on) (Ω ) Forward Transfer Admittance |y fs | (S) 20 Pulse Test V GS = 10 V Pulse Test VDS = 10 V 2 1 Tc = – 25°C 0.5 25°C 75°C 0.2 0.1 0.05 0.02 15 I D = 0.5 A 10 0.1 A 5 0.2 A 0 – 40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 Case Temperature Tc (°C) Drain Current I D (A) 4 2SK1838(L), 2SK1838(S) Body to Drain Diode Reverse Recovery Time 1000 500 1000 VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Sorce Voltage Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 di / dt = 100 A / µ s V GS = 0, Ta = 25°C 20 10 0.05 100 Ciss Coss 10 Crss 1 0 0.1 0.2 0.5 1 2 5 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Sourve Voltage VDS (V) Dynamic Input Characteristics 500 I D = 0.5 A 16 V GS 300 VDD = 200 V 200 V DS 100 V 50 V 8 12 Gate to Source Voltage VGS (V) 400 20 100 50 Switching Characteristics . V GS = 10 V,V DD = 30 V . PW = 2 µs, duty 1 % Drain to Source Voltage VDS (V) Switching Time t (ns) tf 20 10 td (on) 5 tr 2 td (off) 100 VDD = 200 V 100 V 50 V 4 0 4 8 12 16 20 0 1 0.05 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current I D (A) 5 2SK1838(L), 2SK1838(S) Reverse Drain Current vs. Source to Drain Voltage 1.0 Pulse Test Reverse Drain Current IDR (A) 0.8 0.6 0.4 0.2 VGS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 3 D=1 1.0 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 10 µ ho 1s t Pu lse Tc = 25°C θ ch – c(t) = γ s(t) . θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C PW D= T P DM T PW 0.01 100 µ 1m 10 m Pulse Width PW (S) 100 m 1 10 Vin Monitor Vout Monitor D.U.T RL Vout Vin 10 V 50 Ω 10 % 10 % Vin 10 % 90 % . . V DD = 30 V td (on) 90 % tr 90 % td (off) tf 6 Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) DPAK (L)-(1) — Conforms 0.42 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.