2SK1838L-E

2SK1838(L), 2SK1838(S) Silicon N Channel MOS FET REJ03G0980-0300 Rev.3.00 Nov 21, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-A (Package name: DPAK(L)-(1)) 4 D 4 G 1. Gate 2. Drain 3. Source 4. Drain S 1 2 3 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 1 2 3 Rev.3.00 Nov 21, 2005 page 1 of 7 2SK1838(L), 2SK1838(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 250 ±30 1 2 1 10 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 ±30 — — 2.0 0.3 — — — — — — — — — — Typ — — — — — 0.5 5.5 60 30 5 5 6 10 4.5 0.96 160 Max — — ±10 50 3.0 — 8.0 — — — — — — — — — Unit V V µA µA V S Ω pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 0.5 A *3 ID = 0.5 A, VGS = 10 V *3 VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 0.5 A, RL = 60 Ω IF = 1 A, VGS = 0 IF = 1 A, VGS = 0, diF/dt = 100 A/µs Rev.3.00 Nov 21, 2005 page 2 of 7 2SK1838(L), 2SK1838(S) Main Characteristics Power vs. Temperature Derating 20 10 3 10 Maximum Safe Operation Area Channel Dissipation Pch (W) Drain Current ID (A) 15 1 0.3 0.1 D C O PW pe ra 10 = 1 0 s µ s µ 10 (T m s 10 tio m c n s (1 25 = sh o °C ) t) 5 Operation in this area is limited by R DS (on) 0.03 Ta = 25°C 0 50 100 150 200 0.01 1 3 10 30 100 300 1000 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 1.0 8V 10 V 6V 5V Pulse Test Typical Transfer Characteristics 1.0 Pulse Test V DS = 10 V Drain Current ID (A) Drain Current ID (A) 0.8 0.8 0.6 4.5 V 0.6 0.4 4V 0.4 0.2 V GS = 3.5 V 0.2 Tc = 75°C 25°C – 25°C 0 2 4 6 8 10 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test V GS = 10 V Drain to Source Saturation Voltage VDS (on) (V) Static Drain to Source on State Resistance RDS (on) (Ω) 4 20 10 5 3 0.5 A 2 0.2 A 2 1 0.5 0.02 1 ID = 0.1 A 0 4 8 12 16 20 0.05 0.1 0.2 0.5 1 2 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Nov 21, 2005 page 3 of 7 2SK1838(L), 2SK1838(S) Static Drain to Source on State Resistance vs. Temperature Forward Transfer Admittance yfs (S) 25 Pulse Test V GS = 10 V Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current 5 Pulse Test VDS = 10 V 20 2 1 Tc = – 25 C 15 I D = 0.5 A 0.5 0.2 0.1 0.05 0.02 25 C 75 C 10 0.1 A 5 0.2 A 0 – 40 0 40 80 120 160 0.05 0.1 0.2 0.5 1 2 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 1000 1000 Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Reverse Recovery Time t rr (ns) 500 Capacitance C (pF) 200 100 50 di / dt = 100 A / µ s V GS = 0, Ta = 25 C 100 Ciss Coss 10 Crss 20 10 0.05 1 0 10 20 0.1 0.2 0.5 1 2 5 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) 500 I D = 0.5 A Switching Characteristics 20 100 Gate to Source Voltage VGS (V) V GS Switching Time t (ns) 400 16 50 tf td (off) VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % 300 VDD = 200 V V DS 100 V 50 V 12 20 10 5 200 8 td (on) tr 100 VDD = 200 V 100 V 50 V 4 2 1 0.05 0 0 4 8 12 16 20 0.1 0.2 0.5 1 2 5 Gate Charge Qg (nc) Drain Current ID (A) Rev.3.00 Nov 21, 2005 page 4 of 7 2SK1838(L), 2SK1838(S) Reverse Drain Current vs. Source to Drain Voltage 1.0 Reverse Drain Current IDR (A) Pulse Test 0.8 0.6 0.4 0.2 VGS = 10 V 0, – 5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 Tc = 25°C 1.0 0.5 0.3 0.1 0.2 0.1 0.05 0.02 1s hot Pul se θ ch – c(t) = γ s(t) • θ ch – c θ ch – c = 12.5°C / W. Tc = 25°C PW D= T P DM T PW 0.03 0.01 10 µ 0.01 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vin 10 V 50 Ω Vin Vout 10 % Waveforms 90 % 10 % 10 % . . V DD = 30 V 90 % td (on) tr 90 % td (off) tf Rev.3.00 Nov 21, 2005 page 5 of 7 2SK1838(L), 2SK1838(S) Package Dimensions JEITA Package Code  RENESAS Code PRSS0004ZD-A Package Name DPAK(L)-(1) / DPAK(L)-(1)V MASS[Typ.] 0.42g Unit: mm 6.5 ± 0.5 5.4 ± 0.5 1.7 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.2 ± 0.3 3.1 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 16.2 ± 0.5 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 JEITA Package Code SC-63 RENESAS Code PRSS0004ZD-C Package Name DPAK(S) / DPAK(S)V MASS[Typ.] 0.28g Unit: mm 1.5 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 (0.1) (0.1) 2.3 ± 0.2 0.55 ± 0.1 (5.1) 5.5 ± 0.5 1.2 Max 0 – 0.25 (1.2) 2.5 ± 0.5 1.0 Max. 2.29 ± 0.5 0.8 ± 0.1 2.29 ± 0.5 0.55 ± 0.1 Rev.3.00 Nov 21, 2005 page 6 of 7 (5.1) 2SK1838(L), 2SK1838(S) Ordering Information Part Name 2SK1838L-E 2SK1838STL-E Quantity 3200 pcs 3000 pcs Box (Sack) Taping Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Nov 21, 2005 page 7 of 7 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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