2SK2925

2SK2925(L),2SK2925(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-549C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 12 G 3 S 12 3 1. Gate 2. Drain 3. Source 4. Drain 2SK2925(L),2SK2925(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 10 40 10 10 8.5 20 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2925(L),2SK2925(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 5 — — — — — — — — — Typ — — — — — 0.060 0.095 8 350 190 70 10 55 60 70 0.9 50 Max — — ±10 10 2.5 0.080 0.160 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 10A, VGS = 0 I F = 10A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 5A, VGS = 10VNote4 I D = 5A, VGS = 4V Note4 I D = 5A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 5A, VGS = 10V RL = 6Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2925(L),2SK2925(S) Main Characteristics Power vs. Temperature Derating 40 1000 300 Pch (W) Maximum Safe Operation Area 30 I D (A) 100 30 10 3 1 0.3 DC PW 10 0 1 m µs s 0 Op era ms (1s tio h n( Operation in Tc ot) this area is =2 5° limited by R DS(on) C) =1 µs Channel Dissipation 20 10 Drain Current 10 0 50 100 150 200 Case Temperature Tc (°C) Ta = 25°C 0.1 3 0.1 0.3 1 10 Drain to Source Voltage V 30 (V) DS 100 Typical Output Characteristics 10 V 6 V 20 Pulse Test 16 I D (A) Typical Transfer Characteristics 20 5V I D (A) 16 Tc = –25°C 12 25°C 12 4V 75°C Drain Current 8 Drain Current 8 4 3V VGS = 2.5 V 4 V DS = 10 V Pulse Test 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10 0 2 4 6 Gate to Source Voltage V 8 (V) GS 10 4 2SK2925(L),2SK2925(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test 1.6 Drain to Source On State Resistance R DS(on) ( W) 2.0 Static Drain to Source on State Resistance vs. Drain Current 1.0 Pulse Test 0.5 0.2 0.1 VGS = 4 V 10 V 1.2 0.8 I D = 10 A 0.4 5A 2A 12 4 8 Gate to Source Voltage 16 20 V GS (V) 0.05 0.02 0.01 1 2 5 10 20 50 Drain Current I D (A) 100 0 Static Drain to Source on State Resistance R DS(on) ( W) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.5 Pulse Test 0.4 Forward Transfer Admittance vs. Drain Current 20 10 5 Tc = –25 °C 0.3 I D = 10 A 0.2 V GS = 4 V 0.1 0 –40 10 V 10 A 2, 5 A 5A 2A 25 °C 75 °C 2 1 0.5 0.1 0.2 V DS = 10 V Pulse Test 0.5 1 2 5 10 20 Drain Current I D (A) 0 40 80 120 160 Case Temperature Tc (°C) 5 2SK2925(L),2SK2925(S) Body–Drain Diode Reverse Recovery Time 1000 Capacitance C (pF) 500 Reverse Recovery Time trr (ns) Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 di / dt = 50 A / µs V GS = 0, Ta = 25 °C 500 Ciss 200 Coss 100 50 20 10 Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50 5 0.1 0.2 0.5 1 2 Reverse Drain Current 10 20 I DR (A) 5 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 100 I D = 10A V DD = 50 V 25 V 10 V V DS V GS 20 1000 300 Switching Time t (ns) Switching Characteristics 80 16 Drain to Source Voltage 60 12 Gate to Source Voltage 100 30 10 3 1 0.1 t d(off) tf t d(on) tr 40 8 20 V DD = 50 V 25 V 10 V 4 8 12 16 Gate Charge Qg (nc) 4 0 20 V GS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.2 0.5 1 5 10 20 2 Drain Current I D (A) 0 6 2SK2925(L),2SK2925(S) Reverse Drain Current vs. Source to Drain Voltage 20 Reverse Drain Current I DR (A) (mJ) Maximun Avalanche Energy vs. Channel Temperature Derating 10 I AP = 10 A V DD = 25 V duty < 0.1 % Rg > 50 W 16 10 V 12 5V 8 V GS = 0, –5 V Repetitive Avalanche Energy E AR 8 6 4 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage V SD (V) 2 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 • L • I AP • 2 VDSS VDSS – V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 W 0 VDD 7 2SK2925(L),2SK2925(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance g s (t) Tc = 25°C 1 D=1 0.5 0.2 0.1 0.05 0.02 0.0 1 0.3 0.1 q ch – c(t) = g s (t) • q ch – c q ch – c = 6.25 °C/W, Tc = 25 °C uls e PDM PW T 0.03 1s h P ot D= PW T 0.01 10 µ 100 µ 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 W V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK2925(L),2SK2925(S) Package Dimensions Unit: mm 1.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.2 0.55 ± 0.1 5.5 ± 0.5 1.7 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 3.1 ± 0.5 16.2 ± 0.5 4.7 ± 0.5 6.5 ± 0.5 5.4 ± 0.5 2.3 ± 0.5 0.55 ± 0.1 1.2 Max 5.5 ± 0.5 9.5 ± 0.5 1.15 ± 0.1 0.8 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 2.5 ± 0.5 0 ~ 0.25 0.55 ± 0.1 2.29 ± 0.5 2.29 ± 0.5 0.55 ± 0.1 1.2 typ L type S type Hitachi EIAJ ( L type) EIAJ ( S type) JEDEC DPAK–2 SC–63 SC–64 — 9 Cautions 1. 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Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.