2SK2925S

S MD SMD Type N-Channel Silicon MOSFET 2SK2925S IC MOSFET Features Low on-resistance RDS =0.060 typ. +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm High speed switching 4V gate drive device can be driven from 5V source +0.2 9.70-0.2 +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 60 20 10 40 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS IDSS IGSS VGS(off) Yfs RDS(on) Ciss Coss Crss ton tr toff tf ID=5A,VGS(on)=10V,RL=6 VDS=10V,VGS=0,f=1MHZ Testconditons ID=10mA,VGS=0 VDS=60V,VGS=0 VGS= 16V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=5A VGS=10V,ID=5A VGS=4V,ID=5A 1.5 5 8 0.060 0.080 0.095 0.160 350 190 70 10 55 60 70 pF pF pF ns ns ns ns Min 60 10 10 2.5 Typ Max Unit V A A V S 3.80 www.kexin.com.cn 1