HL6503MG

HL6503MG Visible High Power Laser Diode for DVD-RAM ADE-208-670D (Z) 5th Edition Dec. 2000 Description The HL6503MG is a 0.66 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as DVD-RAM, and various other types of optical equipment. Hermetic sealing of the small package (φ 5.6 mm) assures high reliability. Application • Optical disc memories • Optical equipment Features • • • • High output power Visible light output Small package Low astigmatism : 50 mW (CW) : λp = 664 nm Typ : φ 5.6 mm : 5 µm Typ (PO = 5 mW) Internal Circuit Package Type • HL6503MG: MG Internal Circuit 1 3 LD 2 HL6503MG Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power Laser diode reverse voltage Operating temperature Storage temperature Symbol PO PO(pulse) VR(LD) Topr Tstg Value 50 70 * 2 −10 to +60 −40 to +85 Unit mW mW V °C °C Note: Pulse condition : Pulse width = 100 ns, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Pulse optical output power Threshold current Operating current Operating voltage Beam divergence parallel to the junction Beam divergence parpendicular to the junction Asitgmatism Lasing wavelength Symbol PO PO(pulse) Ith Iop VOP θ // θ⊥ AS λp Min 50 70 30 — 2.1 7 18 — 655 Typ — — 45 115 2.6 8.5 21 5 664 Max — — 60 135 3.0 11 26 — 667 Unit mW mW mA mA V deg. deg. µm nm Test Conditions Kink free * Kink free * — PO = 50 mW PO = 50 mW PO = 50 mW PO = 50 mW PO = 5 mW, NA = 0.55 PO = 50 mW Note: Kink free is confirmed at the temperature of 25° C. 2 HL6503MG Typical Characteristic Curves Optical Output Power vs. Forward Current 50 TC = 25°C 40 30 20 10 0 TC = 0°C TC = 60°C Pulse Optical Output Power vs. Forward Current 80 TC = 25°C 60 Optical output power, PO (mW) Optical output power, PO (mW) TC = 0°C 40 TC = 60°C 20 pw = 100 ns duty = 50% 0 0 40 80 120 160 200 0 40 80 120 160 200 Forward current, IF (mA) Forward current, IF (mA) Threshold Current vs. Case Temperature 100 Slope efficiency, ηS (mW/mA) Threshold current, Ith (mA) Slope Efficiency vs. Case Temperature 1.0 0.8 0.6 0.4 0.2 0 50 30 10 0 10 20 30 40 50 60 70 80 0 10 20 30 40 50 60 70 80 Case temperature, TC (°C) Case temperature, TC (°C) 3 HL6503MG Typical Characteristic Curves (cont) Lasing Spectrum TC = 25°C 675 Lasing Wavelength, λp (nm) PO = 50 mW PO = 50 mW 670 665 660 655 650 Wavelength vs. Case Temperature Relative intensity PO = 35 mW PO = 10 mW PO = 5 mW 655 660 Wavelength, λp (nm) 665 0 10 20 30 40 50 60 70 80 Case temperature, TC (°C) Far Field Pattern 1.0 PO = 50 mW TC = 25°C Relative intensity Perpendicular 0.6 0.4 0.2 0 −40 −30 −20 −10 0 Astigmatism, AS (µm) 0.8 8 6 4 2 0 10 20 30 40 10 Astigmatism vs. Optical Output Power TC = 25°C NA = 0.55 Parallel 0 10 20 30 40 50 Angle, θ (deg.) Optical output power, PO (mW) 4 HL6503MG Typical Characteristic Curves (cont) Frequency Response 3 dB/div PO = 3 mW 80 Survival rate (%) Gain (dB) 60 40 20 0 0 1 2 Applied voltage (kV) 3 Forward N = 5 pcs ∆Iop ≤ 10% Electrostatic Destruction (MIL standard) 100 1M 10M 100M 1G 3G Frequency (Hz) 5 HL6503MG Package Dimensions Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (0.4) φ 1.6 ± 0.2 2.3 ± 0.2 0.25 3 Glass Emitting Point φ 4.1 ± 0.3 φ 3.55 ± 0.1 1.2 ± 0.1 6.5 ± 1.0 3 – φ 0.45 ± 0.1 1 2 3 1 2 φ 2.0 ± 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) 1.27 (90°) LD/MG — — 0.3 g 6 HL6503MG Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 7 HL6503MG Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : -538-6533/538-8577 Fax : -538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : -(2)-2718-3666 Fax : -(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : -(2)-735-9218 Fax : -(2)-730-0281 URL : http://www.hitachi.com.hk For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Straβe 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 585160 Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 8