HL6340MG

HL6340MG/41MG Circular Beam Low Operating Current ODE-208-1437D (Z) Rev.4 Mar. 2005 Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source for laser levelers, laser scanners and optical equipment for measurement. Application • Laser leveler • Laser scanner • Measurement Features • • • • • • • Optical output power : 5 mW CW Single longitudinal mode Visible light power : 635 nm Typ Low operating current : 25 mA Typ Low aspect ratio : 1.2 Typ Operating temperature : +50°C TM mode oscillation Package Type • HL6340MG/41MG: MG Internal Circuit • HL6340MG 1 3 Internal Circuit • HL6341MG 1 3 PD LD PD LD 2 2 HL6340MG/41MG Absolute Maximum Ratings (TC = 25°C) Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Storage temperature Symbol PO PO(Pulse) VR(LD) VR(PD) Topr Tstg Value 5 6* 2 30 –10 to +50 –40 to +85 Unit mW mW V V °C °C Note: Pulse condition : Pulse width ≤ 1 µs, duty = 50% Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Threshold current Slope efficiency Operating current Operating voltage Lasing wavelength Beam divergence parallel to the junction Beam divergence perpendicular to the junction Aspect ratio Monitor current Symbol PO Ith ηs IOP VOP λp θ// θ⊥ θ⊥/θ// IS Min 5 — 0.5 — — 630 13 16 — 0.01 Typ — 20 0.8 25 2.4 635 17 20 1.2 0.03 Max — 30 1.1 40 2.7 640 25 25 1.5 0.06 Unit mW mA mW/mA mA V nm deg. deg. — mA Test Condition — — 3 (mW) / (I(4mW) – I(1mW)) PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW PO = 5 mW, VR(PD) = 5 V Notes: 1. Care must be taken in laser diodes handling to prevent optical damage caused by forward surges as well as by ESD. 2. The wavefront performance is not guaranteed. 3. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. Rev.4, Mar. 2005, page 2 of 9 HL6340MG/41MG Typical Characteristic Curves Optical Output Power vs. Forward Current 5 TC = 10˚C 4 25˚C 3 40˚C Monitor current, IS (mA) Optical output power, PO (mW) Monitor Current vs. Optical Output Power 0.10 VR(PD) = 5V TC = 25˚C 0.08 50˚C 0.06 2 0.04 1 0.02 0 0 50 10 20 30 40 Forward current, IF (mA) 60 0 0 1 2 3 4 Optical output power, PO (mW) 5 Slope Efficiency vs. The Case Temperature 1.4 Slope efficiency, ηs (mW/mA) Threshold current, Ith (mA) Threshold Current vs. The Case Temperature 100 1.2 1.0 0.8 0.6 0.4 0.2 0 –10 0 10 20 30 40 Case temperature, TC (˚C) 50 50 20 10 –10 0 10 20 30 40 Case temperature, TC (˚C) 50 Rev.4, Mar. 2005, page 3 of 9 HL6340MG/41MG Monitor Corrent Vs. The Case Temperature 0.05 PO = 5mW VR = 5V 0.04 Lasing Wavelength vs. The Case Temperature 645 PO = 5mW Lasing wavelength, λp (nm) Monitor current, IS (mA) 640 0.03 635 0.02 0.01 0 –10 630 0 10 20 30 40 Case temperature, TC (˚C) 50 625 –10 0 10 20 30 40 Case temperature, TC (˚C) 50 Astigmatism vs. Optical Output Power 5 Far Field Pattern TC = 25˚C NA = 0.55 Relative intensity PO = 5mW 0.8 TC = 25˚C 0.6 0.4 Parallel 0.2 0 –40 –30 –20 –10 0 10 20 Angle, θ (deg.) 30 40 Perpendicular Astigmatism, AS (µm) 1.0 4 3 2 1 0 0 1 2 3 4 Optical output power, PO (mW) 5 Rev.4, Mar. 2005, page 4 of 9 HL6340MG/41MG Electrostatic Destruction 100 80 Survival rate (%) Survival rate (%) Electrostatic Destruction 100 80 60 40 20 0 60 40 20 0 Forward (C : 100pF, R : 1.5kΩ) N=10pcs ∆IO ≤ 10% judgment 0 100 200 Applied voltage (V) 300 Revarse (C : 100pF, R : 1.5kΩ) N=10pcs ∆IO ≤ 10% judgment 0 0.5 1.0 Applied voltage (kV) 1.5 Rev.4, Mar. 2005, page 5 of 9 HL6340MG/41MG Package Dimensions Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (0.4) φ 1.6 ± 0.2 2.3 ± 0.2 0.25 Glass 12° *1 φ 4.1 ± 0.3 φ 3.55 ± 0.1 1.2 ± 0.1 6.5 ± 1.0 3 – φ0.45 ± 0.1 1 2 3 12° *1 1 2 3 φ 2.0 ± 0.2 Note: 1. The beam has 12 deg offset against the package reference plane. Please take account it mounted on a board. OPJ Code JEDEC JEITA Mass (reference value) LD/MG — — 0.3 g Rev.4, Mar. 2005, page 6 of 9 1.27 (90º) Emitting Point HL6340MG/41MG The Cautions on the Handing of HL6340MG/41MG As laser diode differ from silicon devices, the area of safe operation (ASO) of laser diodes is not decided by power consumption alone, but optical output must be considered from view point of optical damage. These products are more sensitive to static electricity or an surge current than the conventional product. The following is test data of ESD (electric static damage). The operating condition should be within 5 mW and the working please should be keep small static electricity level such as 20 V less and small surge current such as 40 mA less from out. 1. Electrostatic destructive examination data : HL6340MG : HL6312G 100 Survival rate (%) Survival rate (%) 100 80 60 40 20 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage VCC (kV) N=5 R = 1.5kΩ C = 100pF Reverse 80 60 40 20 0 0 200 400 600 800 Applied voltage VCC (V) N=5 R = 1.5kΩ C = 100pF Forward 100 Survival rate (%) 100 Survival rate (%) 80 60 40 N = 5 R=0 20 C = 200pF Forward 0 0 20 40 60 80 100 120 Applied voltage VCC (V) 80 60 40 20 0 0 N=5 R=0 C = 200pF Reverse 0.5 1.0 1.5 2.0 2.5 3.0 Applied voltage VCC (kV) R VCC C DUT Step stress test (5 times/voltage) Failure criteria ∆IOP ≥ 10% Rev.4, Mar. 2005, page 7 of 9 HL6340MG/41MG 2. Clamp Capacitance vs. ESD of HL6340MG/41MG Applied voltage, VCC (V) 600 500 400 300 200 100 10 0 R = 0, C = 200pF 0.002 0.004 0.006 0.008 Capacitance, CO (µF) 0.010 Step stress tast (5 times/voltage) Failure criteria ∆IOP ≥ 10% VCC C R = 1.5kΩ, C = 100pF R DUT RO = 2.2kΩ CO 3. Applied puls width vs. Applied current Applied current, IF (mA) 120 100 distribution of IOP (mA) PW IF TC = 25°C 1 shot n = 10pcs 80 60 40 20 0 10µ 100µ 1m 10m 100m Applied puls width, PW (s) 1 4. Catastrophic optical damage of HL6340MG/41MG 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 Destructive optical output power, PCOD (mW) Rev.4, Mar. 2005, page 8 of 9 N (pcs) HL6340MG/41MG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. 190 Kashiwagi, Komoro-shi, Nagano 384-8511, Japan Tel: (0267) 22-4111 Japan (Japanese) Other area (English) For the detail of Opnext, Inc., see the following homepage: http://www.opnext.com/jp/products/ http://www.opnext.com/products/ ©2005 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 1.0 Rev.4, Mar. 2005, page 9 of 9