HMC-ABH241_09

HMC-ABH241 v02.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Features Output IP3: +25 dBm P1dB: +17 dBm Gain: 24 dB Supply Voltage: +5V 50 Ohm Matched Input/Output Typical Applications This HMC-ABH241 is ideal for: • Short Haul / High Capacity Links 3 LINEAR & POWER AMPLIFIERS - CHIP • Wireless LAN Bridges • Military & Space Die Size: 3.2 x 1.42 x 0.1 mm Functional Diagram General Description The HMC-ABH241 is a four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 50 and 66 GHz. The HMC-ABH241 provides 24 dB of gain, and an output power of +17 dBm at 1dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-ABH241 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes. Electrical Specifi cations, TA = +25° C, Vdd1= Vdd2= Vdd3= 5V, Idd1 + Idd2 + Idd3= 220 mA [2] Parameter Frequency Range Gain Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) Saturated Output Power (Psat) Supply Current (Idd1 + Idd2 + Idd3) [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg1 = Vgg2 = Vgg3 between -1V to +0.3V (typ -0.3V) to achieve Idd total = 220 mA 19 Min. Typ. 50 - 66 24 15 15 17 25 19 220 Max. Units GHz dB dB dB dBm dBm dBm mA 3 - 148 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ABH241 v02.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Linear Gain vs. Frequency 30 25 Fixtured Output Power vs. Frequency 25 20 POUT (dBm) GAIN (dB) 20 15 10 5 0 48 50 52 54 56 58 60 62 64 66 68 FREQUENCY (GHz) 15 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 149 P1dB P3dB 10 5 0 50 52 54 56 58 60 62 64 66 68 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 48 50 52 54 56 58 60 62 64 66 68 FREQUENCY (GHz) Output Return Loss vs. Frequency 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 50 52 54 56 58 60 62 64 66 68 70 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ABH241 v02.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Absolute Maximum Ratings Drain Bias Voltage Gain Bias Voltage +5.5 Vdc -1 to +0.3 Vdc 2 dBm -65 °C to + 150°C +180 °C 3 LINEAR & POWER AMPLIFIERS - CHIP RF Input Power Storage Temperature Chennel Temperature ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 - 150 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ABH241 v02.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Pad Descriptions Pad Number Function Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic 1 RFIN 3 LINEAR & POWER AMPLIFIERS - CHIP 3 - 151 2, 4, 6, 10, 12, 14 Vgg1, Vgg2 Vgg3 Gate control for amplifier. Please follow “MMIC Amplifier Biasing Procedure” application note. See assembly for required external components. 3, 5, 7, 9, 11, 13 Vdd1, Vdd2, Vdd3 Power Supply Voltage for the amplifier. See assembly for required external components. 8 RFOUT This pad is AC coupled and matched to 50 Ohms. Die Bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ABH241 v02.0209 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 50 - 66 GHz Assembly Diagram 3 LINEAR & POWER AMPLIFIERS - CHIP Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of