ATF-531P8-TR2

Agilent ATF-531P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and gain • Low noise figure Description Agilent Technologies’s ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT housed in an 8-lead JEDEC-standard leadless plastic chip carrier (LPCC [3]) package. The device is ideal as a high linearity, low-noise, medium-power amplifier. Its operating frequency range is from 50 MHz to 6 GHz. The thermally efficient package measures only 2 mm x 2 mm x 0.75 mm. Its backside metalization provides excellent thermal dissipation as well as visual evidence of solder reflow. The device has a Point MTTF of over 300 years at a mounting temperature of +85°C. All devices are 100% RF & DC tested. Note: 1. Enhancement mode technology employs a single positive Vgs, eliminating the need of negative gate voltage associated with conventional depletion mode devices. 2. Refer to reliability datasheet for detailed MTTF data. 3. Conforms to JEDEC reference outline MO229 for DRP-N 4. Linearity Figure of Merit (LFOM) is essentially OIP3 divided by DC bias power. Pin Connections and Package Marking Pin 8 Pin 7 (Drain) Pin 6 Pin 5 • Excellent uniformity in product specifications Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Source (Thermal/RF Gnd) • Small package size: 2.0 x 2.0 x 0.75 mm • Point MTTF > 300 years [2] • MSL-1 and lead-free • Tape-and-reel packaging option available Bottom View Pin 1 (Source) Pin 2 (Gate) Pin 3 Pin 4 (Source) Pin 8 3Px Top View Pin 7 (Drain) Pin 6 Pin 5 Specifications 2 GHz; 4V, 135 mA (Typ.) • 38 dBm output IP3 • 0.6 dB noise figure • 20 dB gain • 10.7 dB LFOM [4] • 24.5 dBm output power at 1 dB gain compression Applications • Front-end LNA Q1 and Q2 driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure • Driver amplifier for WLAN, WLL/RLL and MMDS applications • General purpose discrete E-pHEMT for other high linearity applications Note: Package marking provides orientation and identification: “3P” = Device Code “x” = Date code indicates the month of manufacture. ATF-531P8 Absolute Maximum Ratings[1] Symbol VDS VGS VGD IDS IGS Pdiss Pin max. TCH TSTG θch_b Parameter Drain–Source Voltage[2] Gate–Source Voltage[2] Gate Drain Voltage[2] Drain Current[2] Gate Current Total Power Dissipation[3] RF Input Power Channel Temperature Storage Temperature Thermal Resistance[4] Units V V V mA mA W dBm °C °C °C/W Absolute Maximum 7 -5 to 1 -5 to 1 300 20 1 +24 150 -65 to 150 63 Notes: 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. Board (package belly) temperatureTB is 25°C. Derate 16 mW/°C for TB > 87°C. 4. Thermal resistance measured using 150°C Liquid Crystal Measurement method. 5. Device can safely handle +24 dBm RF Input Power provided IGS is limited to 20mA. IGS at P1dB drive level is bias circuit dependent. Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA [5,6] 400 0.9 V 300 0.8 V 180 150 120 90 60 -3 Std +3 Std Cpk = 1.0 Stdev = 0.14 160 Cpk = 1.2 Stdev = 0.71 120 IDS (mA) 200 0.7 V 80 -3 Std +3 Std 100 0.6 V 40 30 0.5 V 0 0 1 2 3 4 5 6 7 VDS (V) 0 0 0 0.3 0.6 NF (dB) 0.9 1.2 35 36 37 38 OIP3 (dBm) 39 40 41 Figure 1. Typical I-V Curves (Vgs = 0.1 per step). Figure 2. NF Nominal = 0.6, USL = 1.0. Figure 3. OIP3 LSL = 35.5, Nominal = 38.1. 300 250 200 150 100 50 0 18.5 -3 Std +3 Std Cpk = 2.0 Stdev = 0.21 240 Stdev = 0.12 200 160 120 80 40 0 24.2 -3 Std +3 Std 19.5 GAIN (dB) 20.5 21.5 24.4 24.6 24.8 25 25.2 P1dB (dBm) Figure 4. Small Signal Gain LSL = 18.5, Nominal = 20.2 dB, USL = 21.5. Figure 5. P1dB Nominal = 24.6. Notes: 5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 6. Measurements are made on production test board, which represents a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements. 2 ATF-531P8 Electrical Specifications TA = 25°C, DC bias for RF parameters is Vds = 4V and Ids = 135 mA unless otherwise specified. Symbol Vgs Vth Idss Gm Parameter and Test Condition Operational Gate Voltage Threshold Voltage Saturated Drain Current Transconductance Vds = 4V, Ids = 135 mA Vds = 4V, Ids = 8 mA Vds = 4V, Vgs = 0V Vds = 4.5V, Gm = ∆Idss/∆Vgs; ?Vgs = Vgs1 - Vgs2 Vgs1 = 0.6V, Vgs2 = 0.55V Vds = 0V, Vgs = -4V f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz f = 2 GHz f = 900 MHz Offset BW = 5 MHz Offset BW = 10 MHz Units V V µA mmho Min. — — — — Typ. 0.68 0.3 3.7 650 Max. — — — — Igss NF G OIP3 P1dB PAE ACLR Gate Leakage Current Noise Figure[1] Gain[1] Output 3rd Order Intercept Point[1,2] Output 1dB Compressed[1] Power Added Efficiency Adjacent Channel Leakage Power Ratio[1,3] µA dB dB dB dB dBm dBm dBm dBm % % dBc dBc -10 — — 18.5 — 35.5 — — — — — — — -0.34 0.6 0.6 20 25 38 37 24.5 23 57 45 -68 -64 — 1 — 21.5 — — — — — — — — — Notes: 1. Measurements obtained using production test board described in Figure 6. 2. F1 = 2.00 GHz, F2 = 2.01 GHz and Pin = -10 dBm per tone. 3. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06) – Test Model 1 – Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128) – Freq = 2140 MHz – Pin = -5 dBm – Chan Integ Bw = 3.84 MHz Input 50 Ohm Transmission Line Including Gate Bias T (0.3 dB loss) Input Matching Circuit Γ_mag = 0.66 Γ_ang = -165° (1.8 dB loss) DUT Output Matching Circuit Γ_mag = 0.09 Γ_ang = 118° (1.1 dB loss) 50 Ohm Transmission Line and Drain Bias T (0.3 dB loss) Output Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a trade-off between optimal OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements. 3 2.2 pF 3.3 pF 50 Ohm .02 λ 22 nH 15 Ohm 100 pF 2.2 µF 110 Ohm .03 λ 110 Ohm .03 λ 50 Ohm .02 λ 4.7 pF RF Input DUT 12 nH RF Output Gate DC Supply Drain DC Supply Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown. Gamma Load and Source at Optimum OIP3 Tuning Conditions The device’s optimum OIP3 measurements were determined using a Maury load pull system at 4V, 135 mA quiesent bias. The gamma load and source over frequency are shown in the table below: Freq (GHz) 0.9 2.0 3.9 5.8 Gamma Source Mag Ang 0.616 0.310 0.421 0.402 -37.1 34.5 167.5 -162.8 Gamma Load Mag Ang 0.249 0.285 0.437 0.418 130.0 168.3 -161.6 -134.1 OIP3 (dBm) 40.3 41.5 41.5 41.0 Gain (dB) 16.5 13.4 10.5 7.9 P1dB (dBm) 23.4 24.8 24.7 24.7 PAE (%) 43.2 51.9 42.8 36.6 4 ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3 45 45 45 40 40 40 OIP3 (dBm) OIP3 (dBm) 35 35 OIP3 (dBm) 3V 4V 5V 35 30 30 30 25 3V 4V 5V 25 25 3V 4V 5V 20 75 90 105 120 135 150 165 180 Ids (mA) 20 75 90 105 120 135 150 165 180 Ids (mA) 20 75 90 105 120 135 150 165 180 Ids (mA) Figure 8. OIP3 vs. Ids and Vds at 900 MHz. Figure 9. OIP3 vs. Ids and Vds at 2 GHz. Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz. 17 16 15 17 16 15 12 10 8 GAIN (dB) 14 13 12 11 10 75 90 105 120 135 150 165 180 Ids (mA) 3V 4V 5V GAIN (dB) 14 13 12 11 10 75 90 105 120 135 150 165 180 Ids (mA) 3V 4V 5V GAIN (dB) 6 4 2 0 3V 4V 5V 75 90 105 120 135 150 165 180 Ids (mA) Figure 11. Small Signal Gain vs. Ids and Vds at 900 MHz. 30 Figure 12. Small Signal Gain vs. Ids and Vds at 2 GHz. 30 Figure 13. Small Signal Gain vs. Ids and Vds at 3.9 GHz. 30 25 25 25 P1dB (dBM) P1dB (dBM) 20 20 P1dB (dBM) 3V 4V 5V 20 15 3V 4V 5V 15 15 3V 4V 5V 10 75 90 105 120 135 150 165 180 Idq (mA) 10 75 90 105 120 135 150 165 180 Idq (mA) 10 75 90 105 120 135 150 165 180 Idq (mA) Figure 14. P1dB vs. Idq and Vds at 900 MHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. Figure 15. P1dB vs. Idq and Vds at 2 GHz. Figure 16. P1dB vs. Idq and Vds at 3.9 GHz. 5 ATF-531P8 Typical Performance Curves, continued (at 25°C unless specified otherwise) Tuned for Optimal OIP3 60 50 40 PAE (%) PAE (%) 60 50 40 30 20 3V 4V 5V 60 50 40 PAE (%) 3V 4V 5V 30 20 10 0 30 20 10 0 3V 4V 5V 10 0 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 75 90 105 120 135 150 165 180 Idq (mA) Idq (mA) Idq (mA) Figure 17. PAE vs. Idq and Vds at 900 MHz. Figure 18. PAE vs. Idq and Vds at 2 GHz. Figure 19. PAE vs. Idq and Vds at 3.9 GHz. 45 12 10 30 SMALL SIGNAL GAIN (dB) 40 OIP3 (dBm) 25 P1dB (dBm) 8 6 4 2 0 3V 4V 5V 35 20 30 3V 4V 5V 25 15 3V 4V 5V 20 75 90 105 120 135 150 165 180 Ids (mA) 75 90 105 120 135 150 165 180 10 75 90 105 120 135 150 165 180 Ids (mA) Idq (mA) Figure 20. OIP3 vs. Ids and Vds at 5.8 GHz. Figure 21. Small Signal Gain vs. Ids and Vds at 5.8 GHz. Figure 22. P1dB vs. Idq and Vds at 5.8 GHz. 60 50 40 PAE (%) 30 20 10 0 3V 4V 5V 75 90 105 120 135 150 165 180 Idq (mA) Figure 23. PAE vs. Idq and Vds at 5.8 GHz. Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. 6 ATF-531P8 Typical Performance Curves (at 25°C unless specified otherwise) Tuned for Optimal OIP3, continued 45 20 30 40 15 25 OIP3 (dBm) GAIN (dB) 35 10 P1dB (dBm) -40°C 25°C 85°C 20 30 -40°C 25°C 85°C 25 5 15 -40°C 25°C 85°C 20 0.5 1.5 2.5 3.5 4.5 5.5 0 0.5 1.5 2.5 3.5 4.5 5.5 10 0.5 1.5 2.5 3.5 4.5 5.5 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 24. OIP3 vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) 80 70 60 50 Figure 25. Small Signal Gain vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) Figure 26. P1dB vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) PAE (%) 40 30 20 10 0 0.5 1.5 2.5 3.5 4.5 -40°C 25°C 85°C 5.5 FREQUENCY (GHz) Figure 27. PAE vs. Temp and Freq. (Tuned for optimal OIP3 at 4V, 135 mA) Note: Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective of load pull is to optimize OIP3 and therefore may trade-off Small Signal Gain, P1dB and VSWR. 7 ATF-531P8 Typical Scattering Parameters at 25°C, VDS = 4V, IDS = 180 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.626 0.704 0.761 0.794 0.815 0.824 0.834 0.840 0.845 0.848 0.854 0.857 0.853 0.853 0.855 0.858 0.864 0.871 0.869 0.880 0.883 0.884 0.874 0.874 0.877 0.884 0.894 0.896 0.898 0.918 Ang. -59.4 -97.4 -119.4 -133.8 -142.5 -149.6 -155.1 -159.7 -163.3 -166.4 -177.7 175.9 174.4 168.9 161.6 150.8 140.7 131.7 123.5 115.2 106.8 95.7 85.1 74.1 63.3 57.9 46.8 43.3 31.9 20.8 dB 33.20 31.41 29.53 27.78 26.32 24.99 23.82 22.76 21.83 20.96 17.59 15.60 15.36 13.79 11.83 9.27 7.20 5.48 4.04 2.73 1.77 0.70 -0.34 -1.39 -2.52 -3.64 -4.81 -5.66 -7.25 -8.61 S21 Mag. 45.702 37.192 29.950 24.477 20.693 17.760 15.516 13.742 12.346 11.164 7.579 6.024 5.863 4.894 3.902 2.906 2.292 1.879 1.593 1.370 1.226 1.084 0.962 0.852 0.748 0.658 0.575 0.521 0.434 0.371 Ang. 154.5 135.8 123.5 114.8 108.9 103.9 99.9 96.6 93.6 91.0 80.6 73.9 72.6 66.5 57.9 44.6 31.6 19.4 7.5 -4.3 -16.1 -29.0 -41.6 -52.8 -64.5 -74.6 -85.4 -93.6 -102.6 -110.5 dB -40.00 -35.92 -34.42 -33.56 -32.77 -32.77 -32.40 -32.40 -32.04 -32.04 -31.37 -30.75 -30.46 -29.90 -29.12 -27.74 -26.56 -25.35 -24.29 -23.35 -22.27 -21.41 -20.63 -19.91 -19.49 -19.02 -18.71 -18.49 -18.49 -18.94 S12 Mag. 0.010 0.016 0.019 0.021 0.023 0.023 0.024 0.024 0.025 0.025 0.027 0.029 0.030 0.032 0.035 0.041 0.047 0.054 0.061 0.068 0.077 0.085 0.093 0.101 0.106 0.112 0.116 0.119 0.119 0.113 Ang. 62.6 48.8 39.1 33.7 30.0 27.4 25.8 24.6 24.2 23.8 23.5 24.4 24.9 25.8 26.6 26.5 24.3 21.2 17.4 12.6 7.0 -0.8 -8.8 -16.6 -24.6 -31.9 -39.8 -47.8 -55.1 -62.6 S22 Mag. Ang. 0.410 0.384 0.370 0.360 0.355 0.351 0.349 0.349 0.349 0.347 0.344 0.344 0.335 0.339 0.337 0.356 0.378 0.402 0.427 0.449 0.465 0.489 0.505 0.544 0.596 0.638 0.662 0.699 0.748 0.718 -44.4 -79.2 -101.8 -117.6 -127.1 -135.5 -141.9 -146.9 -151.1 -154.3 -165.8 -171.2 -171.8 -176.8 177.0 168.5 160.6 152.4 144.6 136.1 127.4 116.6 106.0 97.2 85.9 74.7 65.9 56.1 47.7 39.3 MSG/MAG dB 36.60 33.66 31.98 30.67 29.54 28.88 28.11 27.58 26.94 26.50 24.48 23.17 22.91 21.85 19.60 16.23 14.19 12.69 11.18 10.39 9.70 8.70 7.20 6.30 5.46 4.95 4.29 4.06 2.82 1.75 Typical Noise Parameters at 25°C, VDS = 4V, IDS = 180 mA MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 Fmin dB 0.50 0.59 0.60 0.72 0.81 0.90 1.01 1.10 1.13 1.34 1.48 1.58 1.68 1.89 2.15 2.34 Γopt Mag. 0.20 0.25 0.35 0.40 0.57 0.61 0.63 0.67 0.70 0.72 0.75 0.76 0.80 0.84 0.82 0.85 Γopt Ang. 166.00 169.00 171.00 173.00 -173.50 -167.70 -163.50 -158.20 -153.90 -142.70 -135.40 -133.30 -125.00 -116.10 -106.90 -95.10 Rn/50 0.041 0.044 0.036 0.039 0.029 0.033 0.041 0.054 0.068 0.139 0.229 0.278 0.470 0.860 1.170 2.010 Ga dB 28.26 24.27 24.15 21.14 20.07 18.73 16.91 15.86 15.12 13.08 12.04 11.82 10.69 9.97 8.96 8.09 40 30 MSG 20 MAG 10 S21 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 28. MSG/MAG & |S21|2 (dB) @ 4V, 180 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 8 ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.812 0.820 0.834 0.842 0.846 0.849 0.853 0.853 0.855 0.857 0.857 0.857 0.853 0.852 0.853 0.857 0.861 0.866 0.867 0.875 0.877 0.884 0.889 0.872 0.878 0.886 0.902 0.902 0.895 0.932 Ang. -56.4 -94.6 -117.3 -132.4 -141.4 -148.7 -154.4 -159.0 -162.7 -166.0 -177.3 176.2 174.7 169.2 161.7 150.8 140.9 131.6 123.5 115.1 106.9 95.6 85.3 73.9 63.6 57.6 47.2 43.7 32.1 20.6 dB 34.07 31.95 29.87 27.99 26.46 25.08 23.88 22.80 21.85 20.97 17.58 15.57 15.34 13.77 11.80 9.24 7.18 5.45 4.02 2.72 1.76 0.71 -0.34 -1.33 -2.48 -3.57 -4.66 -5.56 -6.99 -8.75 S21 Mag. 50.547 39.582 31.147 25.104 21.036 17.954 15.628 13.809 12.376 11.186 7.568 6.007 5.847 4.879 3.889 2.896 2.285 1.873 1.589 1.367 1.224 1.085 0.962 0.858 0.752 0.663 0.585 0.527 0.447 0.365 Ang. 151.8 132.2 120.2 111.8 106.3 101.6 97.9 94.8 92.0 89.6 79.7 73.3 72.0 66.0 57.6 44.6 31.8 19.7 7.9 -3.8 -15.3 -28.2 -41.0 -51.7 -64.0 -73.7 -84.8 -91.3 -101.9 -109.6 dB -38.42 -34.89 -33.15 -32.40 -32.04 -31.70 -31.70 -31.37 -31.37 -31.37 -30.75 -30.17 -29.90 -29.37 -28.64 -27.54 -26.38 -25.19 -24.29 -23.22 -22.16 -21.31 -20.63 -19.91 -19.58 -19.02 -18.79 -18.49 -18.49 -18.94 S12 Mag. 0.012 0.018 0.022 0.024 0.025 0.026 0.026 0.027 0.027 0.027 0.029 0.031 0.032 0.034 0.037 0.042 0.048 0.055 0.061 0.069 0.078 0.086 0.093 0.101 0.105 0.112 0.115 0.119 0.119 0.113 Ang. 62.6 45.8 36.5 30.5 27.0 24.8 23.2 22.4 21.7 21.2 21.4 21.7 22.5 23.0 24.1 23.9 22.2 18.6 15.1 10.4 4.8 -2.6 -10.7 -18.3 -26.2 -33.3 -42.0 -49.2 -56.7 -63.9 S22 Mag. Ang. 0.449 0.425 0.397 0.385 0.379 0.375 0.372 0.372 0.371 0.369 0.366 0.366 0.347 0.351 0.358 0.375 0.396 0.417 0.440 0.459 0.474 0.496 0.511 0.548 0.600 0.640 0.663 0.698 0.746 0.716 -49.1 -85.0 -108.1 -123.7 -132.5 -140.4 -146.4 -151.0 -154.9 -157.9 -168.7 -174.2 -174.8 -179.7 174.2 165.7 157.8 149.6 141.8 133.4 124.8 114.1 103.7 95.1 84.0 73.1 64.4 54.7 46.5 38.2 MSG/MAG dB 36.25 33.42 31.51 30.20 29.25 28.39 27.79 27.09 26.61 26.17 24.17 22.87 22.62 21.57 20.22 16.28 14.11 12.50 11.10 10.16 9.40 8.69 7.93 6.24 5.55 5.05 4.93 4.37 2.93 2.36 Typical Noise Parameters, VDS = 4V, IDS = 135 mA MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 Fmin dB 0.18 0.26 0.35 0.40 0.51 0.56 0.60 0.73 0.83 1.03 1.15 1.20 1.34 1.57 1.78 1.83 Γopt Mag. 0.20 0.25 0.35 0.40 0.47 0.51 0.56 0.60 0.66 0.68 0.72 0.72 0.78 0.83 0.82 0.85 Γopt Ang. 166.00 169.00 171.00 173.00 177.20 -174.50 -169.30 -162.90 -157.60 -145.50 -137.10 -135.20 -126.70 -117.00 -107.90 -95.70 Rn/50 0.014 0.018 0.021 0.021 0.022 0.022 0.023 0.030 0.040 0.085 0.140 0.160 0.300 0.630 0.880 1.460 Ga dB 28.57 24.42 24.32 21.25 19.35 17.66 16.37 15.09 14.82 12.76 11.55 11.31 10.55 9.81 8.86 8.17 40 30 MSG 20 MAG 10 S21 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 29. MSG/MAG & |S21|2 (dB) @ 4V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 9 ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 75 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.930 0.889 0.876 0.867 0.862 0.858 0.857 0.856 0.854 0.857 0.853 0.853 0.848 0.846 0.848 0.850 0.853 0.861 0.861 0.868 0.873 0.875 0.881 0.871 0.873 0.885 0.891 0.912 0.895 0.933 Ang. -51.3 -88.3 -111.6 -127.3 -137.0 -144.7 -151.0 -156.0 -160.0 -163.5 -175.7 177.6 176.2 170.3 162.4 151.6 141.4 132.3 123.8 115.6 107.1 95.8 85.6 74.2 63.7 57.0 47.0 43.7 32.2 21.2 dB 33.70 31.65 29.58 27.71 26.18 24.81 23.62 22.54 21.59 20.72 17.33 15.33 15.09 13.52 11.55 8.98 6.93 5.22 3.78 2.50 1.51 0.50 -0.57 -1.56 -2.65 -3.80 -4.72 -5.76 -7.15 -8.66 S21 Mag. 48.399 38.230 30.121 24.294 20.379 17.405 15.165 13.404 12.005 10.859 7.351 5.839 5.681 4.742 3.780 2.813 2.220 1.824 1.546 1.334 1.190 1.059 0.937 0.836 0.737 0.646 0.581 0.515 0.439 0.369 Ang. 152.3 132.6 120.6 112.2 106.6 101.9 98.2 95.0 92.2 89.8 79.8 73.3 72.0 66.0 57.5 44.3 31.5 19.4 7.5 -4.3 -15.9 -28.8 -41.2 -52.5 -63.9 -74.0 -85.2 -93.5 -102.3 -110.5 dB -37.08 -32.77 -31.37 -30.75 -30.46 -30.17 -29.90 -29.90 -29.63 -29.63 -29.12 -28.87 -28.64 -28.18 -27.74 -26.94 -25.85 -25.04 -24.01 -23.22 -22.16 -21.41 -20.63 -20.00 -19.66 -19.17 -18.79 -18.56 -18.49 -19.02 S12 Mag. 0.014 0.023 0.027 0.029 0.030 0.031 0.032 0.032 0.033 0.033 0.035 0.036 0.037 0.039 0.041 0.045 0.051 0.056 0.063 0.069 0.078 0.085 0.093 0.100 0.104 0.110 0.115 0.118 0.119 0.112 Ang. 63.6 46.8 36.1 29.5 25.9 23.1 21.1 19.9 18.3 18.2 16.3 16.5 16.7 17.0 17.0 16.7 15.4 12.9 9.8 5.5 0.4 -6.6 -13.8 -21.4 -28.8 -36.3 -43.7 -51.7 -58.5 -65.8 S22 Mag. Ang. 0.524 0.467 0.436 0.415 0.405 0.397 0.392 0.390 0.387 0.384 0.380 0.379 0.360 0.363 0.369 0.385 0.405 0.426 0.447 0.467 0.481 0.501 0.515 0.553 0.604 0.644 0.666 0.700 0.748 0.718 -45.7 -80.7 -103.2 -119.1 -128.4 -136.8 -143.2 -148.2 -152.3 -155.6 -167.2 -173.2 -173.8 -179.0 174.6 165.7 157.5 149.2 141.3 132.8 124.1 113.3 102.9 94.5 83.4 72.5 63.7 54.2 46.0 37.8 MSG/MAG dB 35.39 32.21 30.48 29.23 28.32 27.49 26.76 26.22 25.61 25.17 23.22 22.10 21.86 20.85 19.65 16.29 13.90 12.31 10.85 9.85 9.15 8.19 7.40 6.12 5.28 4.89 4.38 5.43 2.90 2.74 Typical Noise Parameters, VDS = 4V, IDS = 75 mA MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 Fmin dB 0.15 0.20 0.22 0.30 0.36 0.44 0.50 0.55 0.63 0.80 0.90 0.91 1.14 1.24 1.49 1.61 Γopt Mag. 0.10 0.15 0.20 0.30 0.35 0.43 0.47 0.58 0.60 0.67 0.72 0.72 0.71 0.74 0.74 0.76 Γopt Ang. 130.00 135.00 143.00 148.00 154.10 168.70 179.30 -170.80 -164.80 -150.90 -140.80 -139.50 -129.10 -119.90 -109.70 -97.30 Rn/50 0.016 0.019 0.019 0.022 0.024 0.022 0.022 0.019 0.024 0.050 0.095 0.100 0.180 0.285 0.460 0.720 Ga dB 27.97 23.50 23.02 20.07 17.85 16.35 15.29 14.11 14.01 11.92 11.00 10.56 9.80 9.31 8.41 7.73 40 30 MSG 20 MAG 10 S21 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 30. MSG/MAG & |S21|2 (dB) @ 4V, 75 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 10 ATF-531P8 Typical Scattering Parameters, VDS = 5V, IDS = 135 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.805 0.815 0.831 0.839 0.844 0.846 0.850 0.852 0.855 0.854 0.855 0.857 0.851 0.851 0.852 0.857 0.859 0.870 0.867 0.877 0.881 0.885 0.892 0.875 0.883 0.886 0.913 0.908 0.891 0.928 Ang. -56.0 -94.0 -116.9 -131.7 -140.9 -148.3 -154.0 -158.7 -162.5 -165.6 -177.1 176.3 174.9 169.4 161.8 151.1 141.0 131.8 123.6 115.6 106.7 95.6 85.2 74.2 63.8 57.9 47.4 43.1 32.2 20.6 dB 34.11 32.03 29.97 28.10 26.58 25.20 24.00 22.93 21.98 21.10 17.71 15.71 15.46 13.89 11.92 9.35 7.30 5.57 4.11 2.80 1.82 0.75 -0.30 -1.33 -2.49 -3.58 -4.78 -5.81 -6.99 -8.64 S21 Mag. 50.734 39.967 31.517 25.418 21.322 18.207 15.852 14.014 12.559 11.351 7.681 6.099 5.931 4.946 3.943 2.935 2.318 1.899 1.605 1.381 1.233 1.090 0.966 0.858 0.751 0.662 0.577 0.512 0.447 0.370 Ang. 152.1 132.6 120.5 112.1 106.4 101.8 98.0 94.8 92.0 89.6 79.5 73.0 71.7 65.6 57.1 43.9 30.9 18.5 6.5 -5.2 -17.0 -30.1 -42.9 -54.3 -65.9 -76.4 -86.8 -94.4 -105.1 -112.1 dB -39.17 -34.89 -33.56 -32.77 -32.40 -32.04 -31.70 -31.70 -31.70 -31.37 -31.06 -30.46 -30.17 -29.63 -29.12 -27.74 -26.56 -25.51 -24.44 -23.48 -22.38 -21.41 -20.72 -20.00 -19.66 -19.09 -18.71 -18.56 -18.49 -18.86 S12 Mag. 0.011 0.018 0.021 0.023 0.024 0.025 0.026 0.026 0.026 0.027 0.028 0.030 0.031 0.033 0.035 0.041 0.047 0.053 0.060 0.067 0.076 0.085 0.092 0.100 0.104 0.111 0.116 0.118 0.119 0.114 Ang. 62.6 46.6 36.3 30.7 27.2 24.9 23.3 22.3 21.6 20.9 21.1 22.3 22.3 23.3 24.3 24.4 22.8 19.7 16.3 11.8 6.1 -1.3 -9.1 -17.0 -24.8 -31.8 -40.3 -47.8 -54.9 -62.6 S22 Mag. Ang. 0.468 0.419 0.387 0.364 0.354 0.346 0.342 0.339 0.337 0.335 0.331 0.331 0.336 0.315 0.323 0.343 0.367 0.391 0.417 0.440 0.458 0.482 0.500 0.540 0.593 0.636 0.660 0.699 0.747 0.717 -45.2 -79.7 -102.0 -117.9 -127.0 -135.4 -141.6 -146.5 -150.5 -153.9 -165.0 -170.4 -170.9 -175.8 178.2 169.9 162.1 154.0 146.2 137.7 129.1 118.1 107.5 98.6 87.1 75.8 66.8 57.0 48.4 39.9 MSG/MAG dB 36.64 33.46 31.76 30.43 29.49 28.62 27.85 27.32 26.84 26.24 24.38 23.08 22.82 21.76 19.82 16.43 14.19 12.82 11.24 10.41 9.75 8.94 8.31 6.52 5.87 5.23 6.01 4.78 2.98 2.41 Typical Noise Parameters, VDS = 5V, IDS = 135 mA MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 Fmin dB 0.45 0.48 0.50 0.55 0.65 0.70 0.77 0.84 0.90 1.06 1.20 1.19 1.40 1.52 1.75 1.88 Γopt Mag. 0.20 0.32 0.35 0.40 0.46 0.49 0.55 0.58 0.62 0.66 0.69 0.69 0.77 0.81 0.82 0.85 Γopt Ang. 154.00 160.00 166.00 170.00 177.40 -175.10 -168.90 -162.60 -158.20 -145.80 -137.30 -135.40 -126.50 -117.90 -107.50 -95.60 Rn/50 0.037 0.032 0.030 0.030 0.030 0.032 0.031 0.037 0.043 0.085 0.140 0.150 0.320 0.550 0.890 1.530 Ga dB 28.85 25.13 24.43 21.26 19.38 17.90 16.33 15.23 14.60 12.66 11.60 11.38 10.55 9.84 9.05 8.29 40 30 MSG 20 MAG 10 S21 0 -10 0 5 10 FREQUENCY (GHz) 15 2 20 Figure 31. MSG/MAG & |S21| (dB) @ 5V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 11 ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA Freq. GHz 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.5 1.9 2 2.4 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 S11 Mag. 0.823 0.826 0.842 0.846 0.851 0.850 0.855 0.856 0.859 0.857 0.857 0.858 0.855 0.855 0.854 0.858 0.860 0.868 0.866 0.877 0.876 0.880 0.883 0.874 0.878 0.884 0.906 0.907 0.893 0.925 Ang. -57.1 -95.6 -118.2 -133.1 -142.0 -149.2 -154.9 -159.5 -163.2 -166.3 -177.7 175.8 174.4 168.8 161.4 150.7 140.4 131.4 123.2 114.8 106.3 95.1 84.7 73.6 62.9 56.9 46.7 42.9 32.2 20.7 dB 33.96 31.82 29.66 27.75 26.21 24.83 23.62 22.55 21.59 20.71 17.32 15.31 15.08 13.51 11.54 8.98 6.92 5.21 3.79 2.52 1.57 0.56 -0.46 -1.51 -2.56 -3.54 -4.70 -5.61 -6.80 -8.38 S21 Mag. 49.888 38.989 30.415 24.416 20.452 17.443 15.178 13.405 12.012 10.853 7.342 5.828 5.676 4.738 3.774 2.812 2.219 1.821 1.547 1.337 1.198 1.066 0.948 0.840 0.745 0.665 0.582 0.524 0.457 0.381 Ang. 151.3 131.6 119.6 111.4 105.9 101.4 97.7 94.7 92.0 89.6 79.9 73.6 72.3 66.4 58.2 45.3 32.8 21.0 9.4 -2.0 -13.7 -26.0 -38.2 -49.6 -61.1 -71.0 -80.8 -88.0 -99.8 -107.2 dB -37.72 -33.98 -32.77 -32.04 -31.70 -31.37 -31.37 -31.06 -31.06 -30.75 -30.46 -29.90 -29.37 -29.12 -28.40 -27.13 -26.02 -24.88 -23.88 -22.85 -21.83 -21.11 -20.35 -19.83 -19.41 -18.94 -18.71 -18.49 -18.42 -18.86 S12 Mag. 0.013 0.020 0.023 0.025 0.026 0.027 0.027 0.028 0.028 0.029 0.030 0.032 0.034 0.035 0.038 0.044 0.050 0.057 0.064 0.072 0.081 0.088 0.096 0.102 0.107 0.113 0.116 0.119 0.120 0.114 Ang. 62.6 45.7 36.0 30.1 26.8 24.4 22.9 22.1 21.4 21.1 21.0 21.6 22.1 22.6 22.8 22.7 20.7 17.2 13.4 8.5 2.6 -5.0 -12.9 -20.7 -28.5 -35.9 -43.9 -51.4 -58.7 -66.3 S22 Mag. Ang. 0.427 0.418 0.421 0.420 0.419 0.419 0.419 0.420 0.421 0.419 0.418 0.418 0.410 0.403 0.409 0.423 0.440 0.457 0.475 0.490 0.502 0.519 0.530 0.566 0.613 0.652 0.670 0.704 0.747 0.717 -55.1 -92.8 -115.9 -130.7 -139.0 -146.4 -151.9 -156.1 -159.7 -162.6 -172.9 -178.2 -179.1 176.0 169.8 161.0 152.8 144.4 136.6 128.0 119.3 108.7 98.4 90.7 79.7 69.3 60.8 51.6 43.7 35.8 MSG/MAG dB 35.84 32.90 31.21 29.90 28.96 28.10 27.50 26.80 26.32 25.73 23.89 22.60 22.23 21.32 19.97 16.15 13.82 12.31 10.81 10.00 9.09 8.20 7.31 6.06 5.32 4.87 4.76 4.29 2.90 2.20 Typical Noise Parameters, VDS = 3V, IDS = 135 mA MSG/MAG & |S21|2 (dB) Freq GHz 0.5 0.9 1 1.5 2 2.4 3 3.5 3.9 5 5.8 6 7 8 9 10 Fmin dB 0.25 0.30 0.30 0.36 0.45 0.52 0.66 0.70 0.87 1.02 1.13 1.24 1.34 1.58 1.78 1.88 Γopt Mag. 0.20 0.25 0.35 0.40 0.46 0.52 0.56 0.62 0.65 0.67 0.71 0.73 0.82 0.83 0.81 0.83 Γopt Ang. 166.00 169.00 171.00 173.00 176.80 -174.70 -169.80 -162.80 -157.90 -145.70 -136.80 -135.10 -126.20 -116.90 -107.50 -95.40 Rn/50 0.020 0.022 0.018 0.019 0.020 0.021 0.025 0.028 0.042 0.082 0.140 0.175 0.380 0.645 0.870 1.350 Ga dB 28.47 24.36 24.24 21.17 19.30 18.08 16.26 15.33 14.62 12.52 11.53 11.40 10.57 9.67 8.59 7.76 40 30 MSG 20 MAG 10 S21 0 -10 0 5 10 FREQUENCY (GHz) 15 20 Figure 32. MSG/MAG & |S21|2 (dB) @ 3V, 135 mA. Notes: 1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated. 2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate lead. The output reference plane is at the end of the drain lead. 12 Device Models Refer to Agilent’s Web Site www.agilent.com/view/rf Ordering Information Part Number ATF-531P8-TR1 ATF-531P8-TR2 ATF-531P8-BLK No. of Devices 3000 10000 100 Container 7” Reel 13”Reel antistatic bag 2 x 2 LPCC (JEDEC DFP-N) Package Dimensions D1 P pin1 D pin1 1 2 8 E1 R e 3 4 3PX 7 E 6 5 L b Bottom View Top View A A1 A2 A Side View End View DIMENSIONS SYMBOL A A1 A2 b D D1 E E1 e P L MIN. 0.70 0 0.225 1.9 0.65 1.9 1.45 0.20 0.35 NOM. 0.75 0.02 0.203 REF 0.25 2.0 0.80 2.0 1.6 0.50 BSC 0.25 0.40 MAX. 0.80 0.05 0.275 2.1 0.95 2.1 1.75 0.30 0.45 DIMENSIONS ARE IN MILLIMETERS 13 PCB Land Pattern and Stencil Design 2.80 (110.24) 0.70 (27.56) 0.25 (9.84) PIN 1 φ0.20 (7.87) Solder mask RF transmission line + 2.72 (107.09) 0.63 (24.80) 0.22 (8.86) PIN 1 0.32 (12.79) 0.50 (19.68) 1.54 (60.61) 0.25 (9.74) 0.25 (9.84) 0.50 (19.68) 1.60 (62.99) 0.28 (10.83) 0.60 (23.62) 0.80 (31.50) 0.15 (5.91) 0.55 (21.65) 0.72 (28.35) 0.63 (24.80) PCB Land Pattern (top view) Stencil Layout (top view) Device Orientation REEL 4 mm 8 mm CARRIER TAPE USER FEED DIRECTION COVER TAPE 3PX 3PX 3PX 3PX 14 Tape Dimensions D P P0 P2 E F W + + D1 t1 K0 10° Max A0 B0 10° Max Tt DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER PERFORATION DIAMETER PITCH POSITION CARRIER TAPE WIDTH THICKNESS COVER TAPE WIDTH TAPE THICKNESS DISTANCE CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 2.30 ± 0.05 2.30 ± 0.05 1.00 ± 0.05 4.00 ± 0.10 1.00 + 0.25 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 8.00 + 0.30 8.00 – 0.10 0.254 ± 0.02 5.4 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (inches) 0.091 ± 0.004 0.091 ± 0.004 0.039 ± 0.002 0.157 ± 0.004 0.039 + 0.002 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 0.315 ± 0.012 0.315 ± 0.004 0.010 ± 0.0008 0.205 ± 0.004 0.0025 ± 0.0004 0.138 ± 0.002 0.079 ± 0.002 15 www.agilent.com/semiconductors For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788 6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (+65) 6271 2451 India, Australia, New Zealand: (+65) 6271 2394 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (+65) 6271 2194 Malaysia, Singapore: (+65) 6271 2054 Taiwan: (+65) 6271 2654 Data subject to change. Copyright © 2002 Agilent Technologies, Inc. Obsoletes 5988-8407EN (12/02) July 31, 2003 5988-9990EN