HMPS-2820

Agilent HMPS-282x Series MiniPak Surface Mount RF Schottky Barrier Diodes Data Sheet Features • Surface mount MiniPak package – low height, 0.7 mm (0.028") max. – small footprint, 1.75 mm2 (0.0028 inch2) • Better thermal conductivity for higher power dissipation Description/Applications These ultra-miniature products represent the blending of Agilent Technologies’ proven semiconductor and the latest in leadless packaging. This series of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. The MiniPak package offers reduced parasitics when compared to conventional leaded diodes, and lower thermal resistance. Package Lead Code Identification (Top View) 2 Single 3 4 3 Anti-parallel 4 3 Parallel 4 The HMPS-282x family of diodes offers the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. Note that Agilent’s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match. • Single and dual versions • Matched diodes for consistent performance • Low turn-on voltage (as low as 0.34 V at 1 mA) • Low FIT (Failure in Time) rate* • Six-sigma quality level * For more information, see the Surface Mount Schottky Reliability Data Sheet. Pin Connections and Package Marking 3 4 AA 1 Product code Date code 2 #0 1 2 #2 1 2 #5 1 Notes: 1. Package marking provides orientation and identification. 2. See “Electrical Specifications” for appropriate package marking. HMPS-282x Series Absolute Maximum Ratings [1], TC = 25°C Symbol If PIV Tj Tstg θ jc Parameter Forward Current (1 µs pulse) Peak Inverse Voltage Junction Temperature Storage Temperature Thermal Resistance [2] Units A V °C °C °C/W MiniPak 1412 1 15 150 -65 to +150 150 ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge. Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board. Electrical Specifications, TC = +25°C, Single Diode [4] Minimum Breakdown Voltage VBR (V) 15 Maximum Forward Voltage VF (mV) 340 Maximum Forward Voltage VF (V) @ IF (mA) 0.5 10 Maximum Reverse Leakage IR (nA) @ VR (V) 100 1 Typical Dynamic Resistance RD (Ω) [4] 12 Part Number HMPS2820 2822 2825 Package Marking Code L K J Lead Code 0 2 5 Configuration Single Anti-parallel Parallel Maximum Capacitance CT (pF) 1.0 Test Conditions IR = 100 µA IF = 1 mA [1] VF = 0 V f = 1 MHz[2] IF = 5 mA Notes: 1. ∆VF for diodes in pairs is 15 mV maximum at 1 mA. 2. ∆CTO for diodes in pairs is 0.2 pF maximum. 3. Effective carrier lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA. 4. RD = RS + 5.2Ω at 25°C and If = 5 mA. 2 Linear Equivalent Circuit Model Diode Chip Rj RS SPICE Parameters Parameter BV CJ0 EG IBV Units V pF eV A A Ω V HMPS-282x 15 0.7 0.60 1E-4 2.2E-8 1.08 8.0 0.65 2 0.5 Cj IS N RS = series resistance (see Table of SPICE parameters) C j = junction capacitance (see Table of SPICE parameters) 8.33 X 10-5 nT Rj = Ib + Is where Ib = externally applied bias current in amps Is = saturation current (see table of SPICE parameters) T = temperature, °K n = ideality factor (see table of SPICE parameters) RS PB PT M Linear Circuit Model of the Diode’s Package 20 fF 3 30 fF 1.1 nH 2 1 4 30 fF 20 fF Single diode package (HMPx-x8x0) 20 fF 0.05 nH 3 30 fF 0.05 nH 2 12 fF 0.5 nH 0.5 nH 30 fF 0.05 nH 1 0.5 nH 0.5 nH 0.05 nH 4 20 fF Anti-parallel diode package (HMPx-x8x2) 20 fF 0.05 nH 3 30 fF 0.05 nH 2 12 fF 0.5 nH 0.5 nH 30 fF 0.05 nH 1 0.5 nH 0.5 nH 0.05 nH 4 20 fF Parallel diode package (HMPx-x8x5) 3 HMPS-282x Series Typical Performance Tc = 25°C (unless otherwise noted), Single Diode 100 TA = +125°C TA = +75°C TA = +25°C TA = –25°C 100,000 1 I F – FORWARD CURRENT (mA) 10,000 0.8 I R – REVERSE CURRENT (nA) C T – CAPACITANCE (pF) 10 1000 0.6 1 100 TA = +125°C TA = +75°C TA = +25°C 0 5 10 15 0.4 0.1 10 1 0.2 0 0 2 4 6 8 VR – REVERSE VOLTAGE (V) 0.01 0 0.10 0.20 0.30 0.40 0.50 VF – FORWARD VOLTAGE (V) VR – REVERSE VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage at Temperatures. Figure 2. Reverse Current vs. Reverse Voltage at Temperatures. Figure 3. Total Capacitance vs. Reverse Voltage. 1000 30 30 100 1.0 ∆VF - FORWARD VOLTAGE DIFFERENCE (mV) 10 IF (Left Scale) 10 100 IF (Left Scale) 10 10 1 ∆VF (Right Scale) 1 ∆VF (Right Scale) 1 0.1 1 10 100 0.3 0.2 0.4 0.6 0.8 1.0 1.2 VF - FORWARD VOLTAGE (V) 0.3 1.4 1 0.10 0.15 0.20 0.1 0.25 I F – FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) Figure 4. Dynamic Resistance vs. Forward Current. Figure 5. Typical Vf Match, Series Pairs and Quads at Mixer Bias Levels. Figure 6. Typical Vf Match, Series Pairs at Detector Bias Levels. 1 10 10 1 VO – OUTPUT VOLTAGE (V) VO – OUTPUT VOLTAGE (V) 0.1 -25°C +25°C +75°C 0.1 0.01 0.001 +25°C CONVERSION LOSS (dB) DC bias = 3 µA 9 8 0.01 RF in 18 nH 3.3 nH HSMS-282B Vo RF in 68 Ω HSMS-282B Vo 100 pF 0.001 -40 100 KΩ 0 0.0001 1E-005 -20 100 pF 7 4.7 KΩ 20 30 6 0 2 4 6 8 10 12 LOCAL OSCILLATOR POWER (dBm) -30 -20 -10 -10 0 10 Pin – INPUT POWER (dBm) Pin – INPUT POWER (dBm) Figure 7. Typical Output Voltage vs. Input Power, Small Signal Detector Operating at 850 MHz. Figure 8. Typical Output Voltage vs. Input Power, Large Signal Detector Operating at 915 MHz. Figure 9. Typical Conversion Loss vs. L.O. Drive, 2.0 GHz (Ref AN997). 4 ∆VF - FORWARD VOLTAGE DIFFERENCE (mV) RD – DYNAMIC RESISTANCE (Ω) IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (µA) Assembly Information The MiniPak diode is mounted to the PCB or microstrip board using the pad pattern shown in Figure 10. 0.4 0.5 0.4 0.3 0.5 0.3 Figure 10. PCB Pad Layout, MiniPak (dimensions in mm). SMT Assembly Reliable assembly of surface mount components is a complex process that involves many material, process, and equipment factors, including: method of heating (e.g., IR or vapor phase reflow, wave soldering, etc.) circuit board material, conductor thickness and pattern, type of solder alloy, and the thermal conductivity and thermal mass of components. Components with a low mass, such as the MiniPak package, will reach solder reflow temperatures faster than those with a greater mass. Agilent’s diodes have been qualified to the time-temperature profile shown in Figure 12. This profile is representative of an IR reflow type of surface mount assembly process. After ramping up from room temperature, the circuit board with components attached to it (held in place with solder paste) 350 300 250 221 200 150 100 50 0 0 30 60 90 120 150 passes through one or more preheat zones. The preheat zones increase the temperature of the board and components to prevent thermal shock and begin evaporating solvents from the solder paste. The reflow zone briefly elevates the temperature sufficiently to produce a reflow of the solder. The rates of change of temperature for the ramp-up and cooldown zones are chosen to be low enough to not cause deformation of the board or damage to components due to thermal shock. The maximum temperature in the reflow zone (TMAX) should not exceed 255°C. These parameters are typical for a surface mount assembly process for Agilent diodes. As a general guideline, the circuit board and components should be exposed only to the minimum temperatures and times necessary to achieve a uniform reflow of solder. This mounting pad pattern is satisfactory for most applications. However, there are applications where a high degree of isolation is required between one diode and the other is required. For such applications, the mounting pad pattern of Figure 11 is recommended. 0.40 mm via hole (4 places) 0.20 0.8 2.40 Peak Temperature Min. 240°C Max. 255°C TEMPERATURE (°C) 0.40 2.60 Reflow Time Min. 60 s Max. 90 s Preheat 130 – 170°C Min. 60 s Max. 150 s Figure 11. PCB Pad Layout, High Isolation MiniPak (dimensions in mm). This pattern uses four via holes, connecting the crossed ground strip pattern to the ground plane of the board. 180 210 240 270 300 330 360 TIME (seconds) Figure 12. Surface Mount Assembly Temperature Profile. 5 MiniPak Outline Drawing 1.44 (0.058) 1.40 (0.056) 1.12 (0.045) 1.08 (0.043) 1.20 (0.048) 1.16 (0.046) 4 1 3 2 0.82 (0.033) 0.78 (0.031) 0.32 (0.013) 0.28 (0.011) 0.00 Top view 0.00 -0.07 (-0.003) -0.03 (-0.001) 0.70 (0.028) 0.58 (0.023) 0.92 (0.037) 0.88 (0.035) 0.42 (0.017) 1.32 (0.053) 0.38 (0.015) 1.28 (0.051) Bottom view -0.07 (-0.003) -0.03 (-0.001) Side view 6 Device Orientation REEL TOP VIEW 4 mm END VIEW CARRIER TAPE USER FEED DIRECTION COVER TAPE 8 mm Note: “AA” represents package marking code. Package marking is right side up with carrier tape perforations at top. Conforms to Electronic Industries RS-481, “Taping of Surface Mounted Components for Automated Placement.” Standard quantity is 3,000 devices per reel. AA AA AA AA Tape Dimensions and Product Orientation For Outline 4T (MiniPak 1412) P P0 D P2 E F W C D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS) 5° MAX. K0 5° MAX. A0 B0 DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION) SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2 SIZE (mm) 1.40 ± 0.05 1.63 ± 0.05 0.80 ± 0.05 4.00 ± 0.10 0.80 ± 0.05 1.50 ± 0.10 4.00 ± 0.10 1.75 ± 0.10 8.00 + 0.30 - 0.10 0.254 ± 0.02 5.40 ± 0.10 0.062 ± 0.001 3.50 ± 0.05 2.00 ± 0.05 SIZE (INCHES) 0.055 ± 0.002 0.064 ± 0.002 0.031 ± 0.002 0.157 ± 0.004 0.031 ± 0.002 0.060 ± 0.004 0.157 ± 0.004 0.069 ± 0.004 0.315 + 0.012 - 0.004 0.010 ± 0.001 0.213 ± 0.004 0.002 ± 0.00004 0.138 ± 0.002 0.079 ± 0.002 PERFORATION CARRIER TAPE COVER TAPE DISTANCE 7 www.semiconductor.agilent.com Data subject to change. Copyright © 2001 Agilent Technologies, Inc. January 22, 2001 5988-1551EN