HJ41C

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 1/4 HJ41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ41C is designed for use in general purpose amplifier and switching applications. TO-252 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature .................................................................................................................................... +150 °C • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 20 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage....................................................................................................................... 100 V BVCEO Collector to Emitter Voltage.................................................................................................................... 100 V BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V IC Collector Current ................................................................................................................................................ 6 A Electrical Characteristics (TA=25°C) Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Min. 100 100 5 30 15 3 Typ. Max. 10 50 500 1.5 2 75 MHz Unit V V V uA uA uA V V IC=1mA, IE=0 IC=30mA, IB=0 IC=1mA, IC=0 VCE=100V, VEB=0 VCE=60V, IB=0 VEB=5V, IC=0 IC=6A, IB=600mA VCE=4V, IC=6A VCE=4V, IC=300mA VCE=4V, IC=3A VCE=10V, IC=500mA, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Test Conditions HJ41C HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100 125 C o Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 2/4 Saturation Voltage & Collector Current 1000 VCE(sat) @IC=10IB o 25 C o 75 C o Saturation Voltage (mV) 25 C 75 C 100 125 C o o hFE hFE @ VCE=4V 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 10000 Switching Time & Collector Current 10 Switching Times (us).. . Tstg 1 ON Voltage (mV) 1000 VBE(ON) @ VCE=4V Ton 0.1 Tf 25 C 125 C 75 C 100 1 10 100 1000 10000 o o o 0.01 0.1 1.0 10.0 Collector Current-IC (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 100000 PT=1ms PT=100ms 10000 Safe Operating Area Collector Current-IC (mA) Capacitance (pF) PT=1s 1000 100 100 Cob 10 10 0.1 1 10 100 1 Reverse-Biased Voltage (V) 1 10 100 Forward Voltage-V CE (V) HJ41C HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 3/4 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J 41C Control Code Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter N H a5 L a2 Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb-Free: " . " (Note) H Normal: None Pb Free Mark J 41C Date Code Control Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HJ41C HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE6010 Issued Date : 1996.02.14 Revised Date : 2005.07.14 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly