2SC2884

2SC2884 TRANSISTOR (NPN) FEATURES Small Flat Package Complementary to 2SA1204 High DC Current Gain APPLICATIONS Audio Frequency Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 5 800 500 250 150 -55~+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Min 35 30 5 0.1 0.1 100 35 0.5 0.5 120 13 0.8 V V MHz pF 320 Typ Max Unit V V V µA µA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=35V,IE=0 VEB=5V,IC=0 VCE=1V, IC=100mA VCE=1V, IC=700mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCE=5V,IC=10mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING O 100–200 PO1 Y 160–320 PY1 １　 JinYu semiconductor www.htsemi.com