2SC4215

2SC4215 TRANSISTOR (NPN) FEATURES Small reverse transfer capacitance: Cre= 0.55pF(typ.) Low noise figure: NF=2dB (typ.) (f=100 MHz) 1. BASE 2. EMITTER SOT-323 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 4 20 100 150 -55-150 Units V V V mA mW ℃ ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-base time constant Transition frequency Reverse transfer capacitance Noise figure Power gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE Cc.rbb′ fT Cre NF Gpe VCC=6V,Ic=1mA,f=100MHZ 17 Test conditions MIN 40 30 4 0.1 0.5 40 200 25 260 550 0.55 2 23 5 ps MHz pF dB dB TYP MAX UNIT V V V μA μA IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=40V,IE=0 VEB=4V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=1mA, f=30MHZ VCE=6V,IC=1mA, VCB=10V,f=1MHz CLASSIFICATION OF hFE Rank Range Marking R 40-80 QR O 70-140 QO Y 100-200 QY １　 JinYu semiconductor www.htsemi.com 2SC4215 ２ JinYu semiconductor www.htsemi.com 2SC4215 ３ JinYu semiconductor www.htsemi.com