2SC4215

SMD S MD Type Silicon NPN Epitaxial 2SC4215 Transistors IC Features Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2dB (typ.) (f = 100 MHz) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 30 4 20 4 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Reverse transfer capacitance Transition frequency Collector-base time constant Noise figure Power gain Symbol ICBO IEBO hFE Cre fT Testconditons VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 VCE = 6 V, IC = 1 mA VCB = 10 V, f = 1MHz VCE = 6 V, IC = 1 mA 260 40 0.55 550 25 2 17 23 5 Min Typ Max 0.1 0.5 200 pF MHz ps dB dB Unit ìA ìA Cc.rbb' VCB = 6 V, IE = -1mA, f = 30 MHz NF Gpe VCC = 6V, IE = -1mA, f = 100MHz, hFE Classification Marking hFE QR 40 80 QO 70 140 QY 100 200 www.kexin.com.cn 1