2SD1005

2SD1005 TRANSISTOR (NPN) FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 100 80 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance *Pulse test Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2)* VCE(sat)* VBE(sat)* VBE* fT Cob Test conditions Min 100 80 5 0.1 0.1 90 25 0.5 1.5 0.6 160 12 0.7 V V V MHz pF 400 Typ Max Unit V V V µA µA IC=0.1mA,IE=0 IC=1mA,IB=0 IE=0.1mA,IC=0 VCB=100V,IE=0 VEB=5V,IC=0 VCE=2V, IC=100mA VCE=2V, IC=500mA IC=500mA,IB=50mA IC=500mA,IB=50mA VCE=10V, IC=10mA VCE=5V,IC=10mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE（1） RANK RANGE MARKING W 90–180 BW V 135–270 BV U 200–400 BU １　 JinYu semiconductor www.htsemi.com