2SD1005

S MD Type NPN Silicon Epitaxia 2SD1005 Transistors Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Total power dissipation at 25 ambient temperature * Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC IC PT Rating 100 80 5 1 1.5 2 Unit V V V A A W Junction temperature Storage temperature *1. PW 10ìs,duty cycle 50% *2. When mounted on ceramic substrate of 16cm2 X 0.7mm Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 100V, IE=0 VEB = 5V, IC=0 VCE =2V , IC = 100mA VCE =2V , IC = 500mA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA VBE fT Cob VCE =10V , IC = 10mA VCE = 5V , IE = -10mA VCB = 10V , IE = 0 , f = 1.0MHz 600 90 25 200 80 0.15 0.9 630 160 12 0.5 1.5 700 V V mV MHz pF Min Typ Max 100 100 400 Unit nA nA hFE Classification Marking hFE BW 90 180 BV 135 270 BU 200 400 www.kexin.com.cn 1