2SD2098

2SD2098 FEATURES Excellent DC current gain characteristics Complements the 2SB1386 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 20 6 5 500 150 -55-150 Units V V V A mW ℃ ℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance CLASSIFICATION OF Rank Range Marking hFE Q 120-270 AHQ R 180-390 AHR Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN 50 20 6 0.5 0.5 120 390 1 150 30 V MHz pF TYP MAX UNIT V V V μA μA IC=50μA,IE=0 IC=1mA,IB=0 IE=50μA, =0 VCB=40V,IE=0 VEB=5V,IC=0 VCE=2V,IC=0.5A IC=4A,IB=100mA VCE=6V,IC=50mA,f=100MHz VCB=20V,IE=0,f=1MHz １　 JinYu semiconductor www.htsemi.com 2SD2098 ２　 JinYu semiconductor www.htsemi.com 2SD2098 ３　 JinYu semiconductor www.htsemi.com