2SD2098

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES z Excellent DC current gain characteristics z Complements the 2SB1386 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 1 2 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, =0 6 V Collector cut-off current ICBO VCB=40V,IE=0 0.5 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.5 μA DC current gain hFE VCE=2V,IC=0.5A VCE(sat) IC=4A,IB=100mA Collector-emitter saturation voltage Transition frequency Collector output capacitance fT Cob 120 390 1 V VCE=6V,IC=50mA,f=100MHz 150 MHz VCB=20V,IE=0,f=1MHz 30 pF CLASSIFICATION OF hFE Rank Range Marking www.cj-elec.com Q R 120-270 180-390 AHQ AHR 1 C,Nov,2015 SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout www.cj-elec.com 2 C,Nov,2015 SOT-89-3L Tape and Reel www.cj-elec.com 3 C,Nov,2015