FDN338P

FDN338P 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-1.6A= 115m Ω RDS(ON), Vgs@-2.5V, Ids@-1.3A= 155mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S S OT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10 ° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) -20 ±8 -1.6 -5 0.5 -55 to 150 100 166 o V A W o Maximum Power Dissipation PD TJ, Tstg 2) Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) Junction-to-Ambient Thermal Resistance (PCB mounted) C 3) RthJA C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ FDN338P 20V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) 1) 1) Symbol Test Condition Min. Typ. Max. Unit BVDSS R DS(on) VGS(th) I DSS IGSS gfs VGS = 0V, ID = -250uA VGS = -4.5V, ID = -1.6A VGS = -2.5V, ID = -1.3A VDS =VGS, ID = -250uA VDS = -16V, V GS = 0V VGS = ± 8V, VDS = 0V VDS = -5V, ID = -2.8A -20 88 116 -0.42 115 160 -1.5 -1 ±100 6.5 V mΩ V uA nA S Qg Qgs Qgd td(on) tr td(off) tf Ciss 5.8 VDS = -6V, ID ^ -2.8A VGS = -4.5V 1.7 13 VDD = -6V, RL=6Ω ID ^ -1.A, VGEN = -4.5V RG = 6 Ω 36 42 34 415 VDS = -6V, VGS = 0V 223 f = 1.0 MHz 87 0.85 10 nC 25 60 ns 70 60 Coss Crss pF IS VSD IS = -1.6A, VGS = 0V -0.8 -1.6 A -1.2 V Pulse test: pulse width