PXT2907A

PXT2907A TRANSISTOR(PNP) FEATURES Switching and Linear Amplification High Current and Low Voltage Complement to PXT2222A MARKING:p2F MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -60 -60 -5 -600 500 250 150 -55~+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Test conditions Min -60 -60 -5 -0.01 -0.01 75 100 100 100 50 -1.6 -0.4 -2.6 -1.3 12 30 300 65 VCE=-10V,IC=-20mA, f=100MHz 200 V V V V ns ns ns ns MHz 300 Typ Max Unit V V V µA µA IC=-1mA,IE=0 IC=-10mA,IB=0 IE=-1mA,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-10V, IC=-0.1mA VCE=-10V, IC=-1mA DC current gain hFE VCE=-10V, IC=-10mA VCE=-10V, IC=-150mA VCE=-10V, IC=-500mA Collector-emitter saturation voltage VCE(sat) VBE(sat) td tr ts tf fT IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA VCC=-30V, IC=-150mA, IB1=- IB2=-15mA Base-emitter saturation voltage Delay time Rise time Storage time Fall time Transition frequency １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５