PXT2907A

S MD Type PNP Switching Transistor PXT2907A Transistors Features High current (max. 600 mA) Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to soldering point Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) Rating -60 -60 -5 -600 -800 -200 1.3 -65 to +150 150 -65 to +150 97 17 K/W K/W Unit V V V mA mA mA W www.kexin.com.cn 1 SMD Type PXT2907A Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Symbol ICBO IEBO Testconditons IE = 0; VCB = -50 V IE = 0; VCB = -50 V; Tj = 125 IC = 0; VEB = -5 V IC = -0.1 mA; VCE = -1 V IC = -1 mA; VCE = -1 V DC current gain hFE IC = -10 mA; VCE = -1 V VCE = -2 V, IC = -150 mA IC = -500 mA; VCE = -2 V collector-emitter saturation voltage VCEsat IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA base-emitter saturation voltage Collector capacitance Emitter capacitance Transition frequency Turn-on time Delay time Rise time Turn-off time Storage time Fall time VBEsat Cc Ce fT ton td tr toff ts tf IC = -150 mA; IB = -15 mA IC = -500 mA; IB = -50 mA IE = iE = 0; VCB = -10 V; f = 1 MHz IC = iC = 0; VEB = -500 mV; f = 1 MHz IC = -20 mA; VCE = -10 V; f = 100 MHz ICon = -150 mA; IBon = -15 mA; IBoff = 15 mA 75 Transistors Min Typ Max -10 -10 -50 Unit nA ìA nA 100 100 100 50 -400 -1.6 -1.3 -2.6 8 35 200 40 12 30 365 300 65 mV V V V pF pF MHz ns ns ns ns ns ns 300 Marking Marking p2F 2 www.kexin.com.cn