PXT8050

PXT8 050 TRANSISTOR(NPN) SOT-89 FEATURES Compliment to PXT8550 MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Junction Temperature Storage Temperature Value 40 25 6 1.5 0.5 150 -55-150 Units V V V A W ℃ ℃ 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Base-emitter positive favor voltage Transition frequency output capacitance CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE VBEF fT Cob Test conditions MIN 40 25 5 0.1 0.1 0.1 85 40 0.5 1.2 1 1.55 100 15 V V V V MHz pF 400 TYP MAX UNIT V V V μA μA μA IC=100uA, IE=0 IC=0.1mA, IB=0 IE=100μA, IC=0 VCB=40V, IE=0 VCE=20V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=1V, IC=800mA IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA IB=1A VCE=10V,IC=50mA,f=30MHz VCB=10V,IE=0,f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ PXT8 050 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５