SD103AX

SD103AX SCHOTTKY BARRIER DIODE FEATURES     SOD-523 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance ___ MARKING: S 4 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol VRRM VRWM VR VR(RMS) IO IFRM IFSM PD RΘJA Tj Tstg Parameter Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current @t≤1s Non-Repetitive Peak Forward Surge Current@8.3ms Half Sine Wave Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature 28 350 1 15 150 667 125 -55~+150 V mA A mW ℃/W ℃ ℃ 40 V Value Unit ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Reverse current Symbol V(BR) IR IR=100μA VR=30V VR=20V VR=10V IF=1mA Forward voltage VF IF=5mA IF=20mA IF=200mA Total capacitance Reverse recovery time Ctot trr VR=0V,f=1MHz IF= IR=200mA, Irr=0.1×IR, RL=100Ω 50 10 0.27 0.32 0.37 0.6 pF ns V Test conditions Min 40 5 2 1 μA Typ Max Unit V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５