SS8050

SS8 050 TRANSISTOR(NPN) FEATURES Complimentary to SS8550 MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value 40 25 5 1.5 0.3 150 -55-150 Units V V V A W ℃ ℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT VCE=1V, IC= 800mA IC=800mA, IB= 80mA IC=800mA, IB= 80mA VCE=10V, IC= 50mA f=30MHz 100 40 0.5 1.2 V V MHz Test conditions MIN 40 25 5 0.1 0.1 0.1 120 400 TYP MAX UNIT V V V μA μA μA IC= 100μA, IE=0 IC= 0.1mA, IB=0 IE=100μA, IC=0 VCB=40V, IE=0 VCB=20V, IE=0 VEB= 5V, IC=0 VCE=1V, IC= 100mA CLASSIFICATION OF hFE(1) Rank Range １　 JinYu L 120-200 H 200-350 J 300-400 semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ SS8 050 0.5 1000 VCE = 1V IB = 3.0mA IC[A], COLLECTOR CURRENT 0.4 IB = 2.5mA 0.3 hFE, DC CURRENT GAIN 2.0 100 IB = 2.0mA IB = 1.5mA 0.2 10 IB = 1.0mA 0.1 IB = 0.5mA 1 0.1 0 0.4 0.8 1.2 1.6 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE 10000 100 IC = 10 IB VCE = 1V VBE(sat) 1000 IC[mA], COLLECTOR CURRENT 10 100 1000 10 100 1 VCE(sat) 10 0.1 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE 1000 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT IE = 0 f = 1MHz VCE = 10V Cob [pF], CAPACITANCE 100 100 10 10 1 1 10 100 1 1 10 100 400 VCB [V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５