SS8550

SS8 550 TRANSISTOR(PNP) FEATURES  High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 300 417 150 -55～+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–23 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE fT Cob Test conditions Min -40 -25 -5 -100 -100 -100 120 40 -0.5 -1.2 -1 100 20 V V V MHz pF 400 Typ Max Unit V V V nA nA nA IC=-100µA, IE=0 IC=-0.1mA, IB=0 IE=-100µA, IC=0 VCB=-40V, IE=0 VCE=-20V, IB=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V,IC=-50mA , f=30MHz VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING L 120–200 H 200–350 Y2 J 300–400 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ Static Characteristic -180 500 hFE —— IC Ta=100℃ 1mA -160 (mA) 0.9mA hFE -140 -120 -100 -80 -60 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA COLLECTOR CURRENT DC CURRENT GAIN Ta=25℃ 100 IC -40 -20 -0 -0.0 0.2mA IB=0.1mA -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 10 -0.1 -1 -10 -100 VCE=-1V -1000 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VBEsat -1000 -900 —— IC -1000 VCEsat —— IC -800 Ta=25℃ -700 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -100 Ta=100℃ Ta=25℃ -10 -600 -500 Ta=100℃ -400 -300 β=10 -200 -0.1 -1 -10 -100 -1000 -1 0.2 -1 -10 -100 β=10 -1000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) VBE -1000 —— IC 100 Cob/ Cib —— VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25 C o Cib (mA) (pF) -100 Cob Ta=100 C -10 COLLCETOR CURRENT -1 VCE=-1V -0.1 -200 -300 -400 -500 -600 -700 -800 -900 -1000 1 -0.2 -1 -10 20 CAPACITANCE Ta=25℃ C IC o BASE-EMMITER VOLTAGE VBE (mV) REVERSE VOLTAGE V (V) 500 fT —— IC Pc 350 —— Ta (MHz) COLLECTOR POWER DISSIPATION Pc (mW) VCE-10V o Ta=25 C -1 -10 -100 300 TRANSITION FREQUENCY fT 250 100 200 150 100 50 10 0 0 25 50 75 100 125 150 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５