SS8550

SS8550 Jiangsu Weida Semiconductor Co., Ltd. Plastic-Encapsulate Transistors PNP Silicon TO-92 COLLECTOR 3 2 BASE 1. EMITTER 2. BASE 3. COLLECTOR 1 EMITTER 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol SS8550 Unit Collector-Emitter Voltage VCEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation TA=25 C PD 1.0 W Junction Temperature Tj 150 C Storage Temperature Tstg -55 to +150 C Rating DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage(1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -40 - Vdc Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc) ICBO - -0.1 uAdc Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc) IEBO - -0.1 uAdc 1. Pulse Test: Pulse Width  300 us, Duty Cycle 2.0% PRODUCT DATA SHEET 1 Rev89.0 2020 SS8550 Jiangsu Weida Semiconductor Co., Ltd. ELECTRICAL CHARACTERISTICS(TA=25 unless otherwise noted) (Countinued) Characteristics DC Current Gain (IC= -100 mAdc, VCE=-1.0 Vdc) Max Min TYP hFE(1) 85 - 400 - hFE(2) 40 - - - Collector-Emitter Saturation Voltage (IC= -800 mAdc, IB= -80 mAdc) VCE(sat) - - -0.5 Vdc Base-Emitter SaturationVoltage (IC= -800 mAdc,IB= -80 mAdc) VBE(sat) - - -1.2 Vdc fT 100 - - MHz Symbol DC Current Gain (IC= -800 mAdc, VCE= -1.0 Vdc) Transition Frequency (VCE =-10V, IC =-50mA, f=30 MHz) Unit Classification of hFE(1) Rank Range PRODUCT DATA SHEET B C D E 85-160 120-200 160-300 300-400 2 Rev89.0 2020 SS8550 Jiangsu Weida Semiconductor Co., Ltd. 1000 -0.5 VCE = -1V -0.4 IB=-3.5mA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT IB=-4.0mA IB=-3.0mA IB=-2.5mA -0.3 IB=-2.0mA IB=-1.5mA -0.2 IB=-1.0mA -0.1 100 10 IB=-0.5mA -0.4 -0.8 -1.2 -1.6 1 -0.1 -2.0 -1 -10 -100 -1000 I C[mA], COLLECTOR CURRENT V CE [V], COLLECTOR-EMITTER VOLTAGE FIG.1 Static Characteristic FIG.2 DC Current Gain VCE = -1V I C=10I B IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 -10000 -1000 VBE(sat) -100 VCE(sat) -10 -0.1 -1 -10 -100 -10 -1 -0.1 -0.0 -1000 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 100 f=1MHz Cob[pF], CAPACITANCE IE=0 10 -10 -100 -1000 V CB[V], COLLECTOR-BASE VOLTAGE -0.8 -1.0 -1.2 1000 VCE=-10V 100 10 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT FIG.5 Collector Output Capacitance PRODUCT DATA SHEET -0.6 FIG.4 Base-Emitter On Voltage FIG.3 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1 -0.4 V BE [V], BASE-EMITTER VOLTAGE I C[mA], COLLECTOR CURRENT 1 -0.2 FIG.6 Current Gain Bandwidth Product 3 Rev89.0 2020 SS8550 Jiangsu Weida Semiconductor Co., Ltd. TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.30 3.70 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.30 4.70 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 Information furnished in this document is believed to be accurate and reliable. However, Jiangsu Weida Semiconductor Co., Ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. Information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, Jiangsu Weida Semiconductor Co., Ltd complies with the agreement. Products and information provided in this document have no infringement of patents. Jiangsu Weida Semiconductor Co., Ltd assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. PRODUCT DATA SHEET 4 Rev89.0 2020