SS8550

山东晶导微电子股份有限公司 SS8550 Jingdao Microelectronics co.LTD SOT-23 SS8550 PNP TRANSISTOR 3 FEATURES • High Collector Current • Complementary to SS8050 1 MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter 2 Symbol Value Unit Collector–Base Voltage V CBO -40 V Collector–Emitter Voltage V CEO -25 V Emitter–Base Voltage V EBO -5 V Collector Current — Continuous IC -1.5 A Collector Dissipation PC 200 mW R thJA 625 ℃/W Thermal Resistance From Junction To Ambient Operation Junction and Storage Temperature Range T J ,T stg -55~+150 1.BASE 2.EMITTER 3.COLLECTOR ℃ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Symbol Parameter Test conditions Min Max Typ Unit Collector-base breakdown voltage V (BR)CBO I C =-100uA, I E = 0 -40 V Collector-emitter breakdown voltage V (BR)CEO I C =-0.1 mA, I B = 0 -25 V Emitter-base breakdown voltage V (BR)EBO I E =-100uA, I C = 0 -5 V Collector cut-off current I CBO V CB =-40V, I E = 0 -0.1 uA Collector cut-off current I CEO V CE =-20V, I B =0 -0.1 uA Emitter cut-off current I EBO V EB =-5V, I C = 0 -0.1 uA h FE1 V CE =-1V, I C =-100mA 120 h FE2 V CE =-1V, I C =-800mA 40 Collector-emitter saturation voltage V CE(sat) I C =-800mA, I B =-80mA -0.5 V Base-emitter saturation voltage V BE(sat) I C =-800mA, I B =-80mA -1.2 V -1 V 400 DC current gain Base-emitter voltage V BE Transition frequency fT Collector output capacitance C ob V BE =-1V, I C =-10mA V C E =-10V, I C =-50mA, f=30MHz V C B =-10V, I E =0, f=1MHz 100 MH Z 20 CLASSIFICATION O F h FE( 1) RANK RANGE MARKING 2020.10 L 120-200 H 200-350 Y2 www.sdjingdao.com J 300-400 Page 1 of 4 山东晶导微电子股份有限公司 SS8550 Jingdao Microelectronics co.LTD TYPICAL CHARACTERICS I C —— V CE COMMON EMITTER T a =25℃ I B =-2mA -400 I B =-1.8mA I B =-1.6mA -300 I B =-1.4mA I B =-1.2mA I B =-1mA -200 I B =-800uA I B =-600uA -100 I B =-400uA I B =-200uA -0 -0.5 -1.0 -1.5 -2.0 400 200 0 25 C ob 10 1 0.1 -0.1 -1 -10 -20 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mV) f=1MHz I E=0/ Ic=0 Ta=25℃ C ib CAPACITANCE C (pF) Fig.4 C ob / C ib —— V CB / V EB Fig.3 V CEsat —— I C Τ α =25℃ -10 -1 β=10 -0.1 -1 -10 -100 -1000 -1500 Fig.6 V BEsat —— I C -1.6 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) DC CURRENT GAIN h FE 150 -100 h FE --Ic 300 200 100 COMMON EMITTER V CE =-1V -1.2 Τ α =25℃ -0.8 -0.4 β=10 10 -0 -10 -1 -100 -1000 -1500 Fig.8 TRANSITION FREQUENCY f T (MHz) -1500 -1000 -100 T a =100℃ T a =25℃ -10 -1 V CE =-1V -0.1 -0 -0.2 -0.4 -0.6 -0.8 -1.0 -100 -1000 -1500 I C , COLLECTOR CURRENT (mA) I C —— V BE Fig.7 -10 -1 I C , COLLECTOR CURRENT (mA) COLLECTOR CURRENT I C (mA) 125 I C , COLLECTOR CURRENT (mA) 400 f T —— I C 1000 V CE=-10V Ta=25℃ 100 -1.2 10 0 -0 -50 -100 -150 I C , COLLECTOR CURRENT (mA) BASE-EMMITER VOLTAGE V BE (V) 2020.10 100 -1000 REVERSE BIAS VOLTAGE V (V) Fig.5 75 50 AMBIENT TEMPERATURE Ta ( ℃) COLLECTOR-EMITTER VOLTAGE V CE (V) 100 P C —— T a Fig.2 COLLECTOR POWER DISSIPATION Pc (mW) COLLECTOR CURRENT I C (mA) Fig.1 -500 www.sdjingdao.com Page 2 of 4 山东晶导微电子股份有限公司 SS8550 Jingdao Microelectronics co.LTD SOT-23 Package Outline Dimensions e ∠ALL ROUND A D e M e E C a L1 L HE SOT-23 mechanical data UNIT mm mil A C D E HE max 1.1 0.15 1.4 3.0 2.6 min 0.9 0.08 1.2 2.8 2.2 e M L L1 a ∠ 0.5 1.95 0.55 0.36 0.0 (ref) (ref) 0.3 1.7 0.15 12° max 43 6 55 118 102 20 77 min 35 3 47 110 12 67 87 22 14 0.0 (ref) (ref) 6 Marking The recommended mounting pad size 0.8 (0.031) Type number Marking code SS8550 Y2 0.9 (0.039) 0.95 (0.037) 0.95 (0.037) 2.0 (0.079) mm Unit ： (inches) 2020.10 201013 Page 3 of 4 山东晶导微电子股份有限公司 SS8550 Jingdao Microelectronics co.LTD SOT-23 Packing 1.The method of packaging and dimension are shown as below figure. (Dimension in mm) 7 inX8 mm Cover Tape 3,000 pcs per reel Carrier Tape SOT-23 220mm 8 reels per box 24,000 pcs per box 5 boxes per carton 120,000 pcs per carton 105 mm m mm m 210 5m 0m 18 55 180 mm SOT-23 Embossed Carrier Tape SOT-23 Tape Leader and Trailer 2020.10 www.sdjingdao.com Page 4 of 4