UMH15N

UMH15N DIGITAL TRANSISTOR (NPN+ NPN) SOT-363 FEATURES z Two DTC144T chips in a package z Transistor elements are independent, eliminating interference Mounting cost and area can be cut in half. z External circuit 1 MARKING: H15 Absolute maximum ratings(Ta=25℃) Parameter Collector-base voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC PC Tj Tstg Limits 50 50 5 100 150 150 -55~150 Unit V V V mA mW ℃ ℃ Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation Junction temperature Storage temperature Electrical characteristics (Ta=25℃) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE R1 fT 100 32.9 47 250 Min. 50 50 5 0.5 0.5 0.3 600 61.1 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Typ Max. Unit V V V μA μA V Conditions IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=10mA,IB=1mA VCE=5V,IC=1mA 1 JinYu semiconductor www.htsemi.com Date:2011/ 05