UMH7N / IMH7A
Transistors
General purpose (dual digital transistors)
UMH7N / IMH7A
!Features 1) Includes two DTC143T transistors in a single UMT package. !External dimensions (Units : mm)
(4)
0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9
UMH7N
(3)
0.2
(6)
1.25
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMH7N Collector power dissipation FMG13, IMH7A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 −55∼+150 Unit V V V mA mW ˚C ˚C
0.15
2.1
0.1Min.
0to0.1
Each lead has same dimensions
∗1 ∗2
ROHM : UMT6 EIAJ : SC-88
(6)
0.3
(4)
(5)
!Package, marking, and Packaging specifications
Part No. Package Marking Code Basic ordering unit (pieces) UMH7N UMT6 H7 TR 3000 IMH7A SMT6 H7 T108 3000
0.15
0.3to0.6
1.6 2.8
0to0.1
Each lead has same dimensions
ROHM : SMT6 EIAJ : SC-74
!Circuit diagram
UMH7N IMH7A
R1
R1
R1
R1
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) R1 Min. 50 50 5 − − 100 − 3.29 Typ. − − − − − 250 − 4.7 Max. − − − 0.5 0.5 600 0.3 6.11 Unit V V V µA µA − V kΩ IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V VCE / IC=5V / 1mA IC / IB=5mA / 0.25mA − Conditions
(3)
(2)
(1)
∗1 ∗2
120mW per element must not be exceeded. 200mW per element must not be exceeded.
IMH7A
(1)
2.0
(5)
(2)
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