H6718V

Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T RA N S I S T O R H6718V █ APPLICATIONS . Audio Amplifie，switching Power Amplifie █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（TA=25℃）………………… 1.6W VCBO —— Collector-Base Voltage ………………………… 100V VCEO —— Collector-Emitter Voltage ……………………… 100V VEBO —— Emitter-Base Voltage ……………………………… 5V IC——Collector Current……………………………………1A 1―Emitter，E 2―Collector，C 3―Base，B TO-126ML █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current 100 100 5 100 80 50 20 350 50 20 250 V V V IC=100μA, IE=0 IC=1mA, IB=0 IE=10μA，IC=0 VCE=1V, IC=50mA VCE=1V, IC=250mA VCE=1V, IC=500mA μA VCB=80V, IE=0 HFE（1） DC Current Gain HFE（2） DC Current Gain HFE（3） DC Current Gain VCE(sat) Collector- Emitter Saturation Voltage ft Cob Current Gain-Bandwidth Product mV MHz pF IC=350mA, IB=35mA VCE=10V, IC=50mA, VCB=10V, IE=0,f=1MHz Output Capacitance