BCR503

BCR503 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k , R2=2.2k )   C 3 3 Thermal Resistance 1For calculation of R thJA please refer to Application Note Thermal Resistance 1


2 1 VPS05161 R1 R2 1 B 2 E EHA07184 Type BCR503 Maximum Ratings Parameter Marking XAs 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 12 500 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 °C Junction temperature Storage temperature mA mW °C Junction - soldering point 1) RthJS 215 K/W Jun-29-2001 BCR503 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V Resistor ratio R1 /R2 0.9 1 1.1 Input resistor Vi(on) R1 1 1.5 2.2 1.8 2.9 Vi(off) 0.6 1.5 VCEsat 0.3 hFE 40 IEBO 3.5 ICBO 100 V(BR)CBO 50 V(BR)CEO 50 typ. max. Unit V nA mA V V V k - AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 100 MHz 1) Pulse test: t < 300 s; D < 2% 2 Jun-29-2001

BCR503 DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration) 10 3 - Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20 10 3 mA 10 2 hFE 10 2 10 1 IC 10 1 10 0 10 -1 -1 10 0 1 2 10 10 10 mA 10 3 10 0 0.0 0.2 0.4 0.6 V 1.0 IC VCEsat Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration) 10 3 mA Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration) 10 1 mA 10 2 10 0 IC 10 1 10 0 10 -1 10 -1 10 -2 -1 10 IC 0 1 10 10 V 10 2 10 -2 0.0 0.5 1.0 V 2.0 Vi(on) Vi(off) 3 Jun-29-2001 BCR503 Total power dissipation Ptot = f (TS ) 400 mW 300 Ptot 250 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 4 - 10 2 Ptotmax / PtotDC 10 3 10 1 10 2 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-29-2001