BCW65

BCW65, BCW66 NPN Silicon AF Transistor For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW67, BCW68 (PNP) 3



2 1 VPS05161 Type BCW65A BCW65B BCW65C BCW66F BCW66G BCW66H Maximum Ratings Parameter Marking EAs EBs ECs EFs EGs EHs 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO BCW65 32 60 5 800 1 100 200 330 150 BCW66 45 75 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature IC ICM IB IBM Ptot Tj Tstg mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS
215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-10-2001 BCW65, BCW66 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 Collector cutoff current VCB = 32 V, IE = 0 , TA = 150 °C VCB = 45 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 4 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 10 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H DC current gain 1) IC = 100 mA, VCE = 1 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H 1) Pulse test: t ≤ 300µs, D = 2% Unit max. V typ. V(BR)CEO BCW65 BCW66 V(BR)CBO BCW65 BCW66 V(BR)EBO ICBO BCW65 BCW66 ICBO BCW65 BCW66 IEBO hFE 35 50 80 hFE 75 110 180 hFE 100 160 250 160 250 350 250 400 630 20 20 20 20 20 60 75 5 32 45 - nA µA nA - 2 Jul-10-2001 BCW65, BCW66 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC Characteristics DC current gain 1) IC = 500 mA, VCE = 2 V hFE -grp.A/F hFE -grp.B/G hFE -grp.C/H Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 60 Ccb 6 pF fT 170 MHz VBEsat 1.25 2 VCEsat 0.3 0.7 hFE 35 60 100 V Symbol min. Values typ. max. Unit 3 Jul-10-2001 BCW65, BCW66 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT 5 BCW 65/66 EHP00391 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 2 5 °C 150 TS 10 1 10 0 10 1 10 2 mA 10 3 ΙC Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BCW 65/66 EHP00392 Collector cutoff current ICBO = f (T A) VCB = V CEmax 10 5 nA BCW 65/66 EHP00393 D= tp T tp T Ι CB0 10 4 5 10 5 2 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 3 5 10 2 5 max typ 10 5 1 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 0 0 50 100 ˚C TA 150 4 Jul-10-2001 BCW65, BCW66 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 mA BCW 65/66 EHP00394 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 10 3 mA BCW 65/66 EHP00395 ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C ΙC 10 2 5 150 ˚C 25 ˚C -50 ˚C 10 1 5 10 1 5 10 5 0 10 0 5 10 -1 0 1 2 3 V VBE sat 4 10 -1 0 200 400 600 mV 800 VCE sat DC current gain hFE = f (IC ) VCE = 1V 10 3 5 BCW 65/66 EHP00396 100 ˚C 25 ˚C h FE 10 2 5 -50 ˚C 10 1 5 10 0 10 -1 5 10 0 5 10 1 5 10 2 mA 10 3 ΙC 5 Jul-10-2001