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BCW65

BCW65

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    BCW65 - NPN General Purpose Transistors - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
BCW65 数据手册
SMD S MD Type NPN General Purpose Transistors BCW65,BCW66 SOT-23 Transistors IC Unit: mm Features For general AF applications. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Low collector-emitter saturation voltage. +0.1 1.3-0.1 High current gain. 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation,TS = 79 Junction temperature Storage temperature Junction - soldering point Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BCW65 60 32 5 800 1 100 200 330 150 -65 to +150 215 K/W BCW66 75 45 5 Unit V V V mA A mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW65,BCW66 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage BCW65 BCW66 Collector-base breakdown voltage Emitter-base breakdown voltage BCW65 Collector cutoff current BCW66 BCW65 BCW66 Emitter cutoff current A/F DC current gain * hFE-grp. B/G C/H A/F DC current gain * hFE-grp. B/G C/H A/F DC current gain * hFE-grp. B/G C/H Collector-emitter saturation voltage * VCE(sat) IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage Transition frequency Collector-base capacitance Emitter-base capacitance * Pulse test: t 300ìs, D = 2%. * VBE(sat) fT Ccb Ceb IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 50 mA IC = 50 mA, VCE = 5 V, f = 100 MHz VCB = 10 V, f = 1 MHz VEB = 0.5 V, f = 1 MHz hFE IC = 100 mA, VCE = 1 V hFE IC = 10 mA, VCE = 1 V hFE IC = 100 ìA, VCE = 10 V IEBO ICBO BCW65 BCW66 V(BR)EBO IE = 10 ìA, IC = 0 ICBO VCB = 32 V, IE = 0 VCB = 45 V, IE = 0 VCB = 32 V, IE = 0 , TA = 150 VCB = 45 V, IE = 0 , TA = 150 VEB = 4 V, IC = 0 35 50 80 75 110 180 100 160 250 V(BR)CBO IC = 10 ìA, IE = 0 Symbol Testconditons Min 32 45 60 75 5 Transistors IC Typ Max Unit V V(BR)CEO IC = 10 mA, IB = 0 V V 20 20 20 20 20 nA ìA nA 160 250 350 250 400 630 0.3 0.7 1.25 2 V 170 6 60 MHz pF hFE Classification TYPE Rank Marking A EAs BCW65 B EBs C ECs TYPE Rank Marking F EFs BCW66 G EGs H EHs 2 www.kexin.com.cn
BCW65 价格&库存

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