BFP720F

BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 RF & Protection Devices Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BFP720F BFP720F, SiGe:C Heterojunction Wideband RF Bipolar Transistor Revision History: 2009-03-13, Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Converted to the new IFX Template. Business Unit, Infineon Logo and the Trademarks were changed. 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AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO. OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2009-10-19 Data Sheet 3 Revision 1.0, 2009-03-13 BFP720F Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 3 4 5 5.1 5.2 5.3 5.4 6 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 13 13 14 19 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Data Sheet 4 Revision 1.0, 2009-03-13 BFP720F List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 Figure 17 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Permissible Pulse Load RthJS = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BFP720F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE Parameter in V. . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms, IS21I² = f (freq), VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . . . . . . Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . Input Matching S11 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Matching S22 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . Source Impedance Zopt for NFmin vs. Frequency, VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Figure NFmin = f (freq), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Outline TSFP-4(top / side view). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Marking Example (Marking BFP720F: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 12 14 19 19 20 20 21 21 22 22 23 25 25 25 25 Data Sheet 5 Revision 1.0, 2009-03-13 BFP720F List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Table 14 Table 15 Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25°C (unless otherwise specified). . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Data Sheet 6 Revision 1.0, 2009-03-13 SiGe:C Heterojunction Wideband RF Bipolar Transistor 1 • • • • • • • • • • • • Features High performance general purpose wideband LNA transistor 150 GHz fT-Silicon Germanium Carbon technology 3 Enables Best-In-Class performance for wireless applications due to 2 4 high dynamic range 1 Transistor geometry optimized for low-current applications Operation voltage: 1.0 V to 4.0 V Very high gain at high frequencies and low current consumption 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA 15 dB maximum available gain at 10 GHz and only 13 mA Ultra low noise figure from latest SiGe:C technology 0.7 dB minimum noise figure at 5.5 GHz and 1.0 dB at 10 GHz High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and low current consumption of 13 mA Pb-free (RoHS compliant) package Main features: Applications FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB. Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package BFP720F Data Sheet TSFP-4 1=B 2=E Pin Configuration 3=C 7 4=E Marking R9s Revision 1.0, 2009-03-13 BFP720F Product Brief 2 Product Brief The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V. Table 1 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Collector current Total power dissipation DC current gain Quick Reference DC Characteristics at TA = 25°C Symbol Min. Values Typ. 4.7 15 – – 250 Max. – – 25 100 400 V V mA mW 4 13 – – 160 Unit Note / Test Condition V(BR)CEO V(BR)CBO IC Ptot hFE IC = 1 mA, IB = 0 IE = 0 – TS ≤ 109 °C VCE = 3 V, IC = 13 mA Data Sheet 8 Revision 1.0, 2009-03-13 BFP720F Product Brief Table 2 Parameter Quick Reference AC Characteristics at TA = 25°C Symbol Min. Values Typ. 45 Max. – GHz – Unit Note / Test Condition Transition frequency f = 2.4 GHz Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point fT VCE = 3 V, IC = 13 mA, f = 1 GHz – – 22 25.5 dB Gms Gms – IC = 5 mA IC = 13 mA – dB S21 S21 – 20.5 23 – 0.55 22 – – 6 21 – – 19 21.5 – – 15 16.5 – – 0.7 15 – – 7 21 dBm dB dB dB dBm dB ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA NFmin Gass OP1dB OIP3 f = 5.5 GHz Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Gms Gms S21 S21 NFmin Gass OP1dB OIP3 IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Data Sheet 9 Revision 1.0, 2009-03-13 BFP720F Maximum Ratings 3 Maximum Ratings Maximum Ratings at TA = 25°C (unless otherwise specified) Symbol Min. Values Max. 4.0 3.5 13 13 1.2 25 2 100 150 V V V mA mA mW °C V – – – – – – – – -55 Unit Note / Test Condition Table 3 Parameter Collector-emitter voltage VCEO VCES VCBO VEBO IC IB TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation 1) Ptot TJOp TS ≤ 109 °C Operation junction temperature Storage temperature TStg -55 150 °C 1) TS is the soldering temperature. TS measured on the emitter lead at the soldering point of the pcb. Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operation conditions. Data Sheet 10 Revision 1.0, 2009-03-13 BFP720F Thermal Characteristics 4 Thermal Characteristics Table 4 Parameter Thermal Resistance Symbol Min. 1) Values Typ. Max. Unit K/W Note / Test Condition – Junction - soldering point RthJS – 410 – 1) For calculation of RthJA please refer to Application Note Thermal Resistance 120 100 80 Ptot [mW] 60 40 20 0 0 50 Ts [°C] 100 150 Figure 1 Total Power Dissipation Ptot = f (Ts) Data Sheet 11 Revision 1.0, 2009-03-13 BFP720F Thermal Characteristics 10 D= 0 D= .005 D= .01 D= .02 Ptot_max / Ptot_DC D= .05 D= .1 D= .2 D= .5 D=0 D=0.5 1 1.E+00 1.E+00 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 D= 0 tp [sec] Figure 2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) 1000 D=0.5 RthJS [K/W] D= .5 D= .2 D= .1 D= .05 D= .02 D=0 D= .01 D= .005 100 1.E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 tp [sec] Figure 3 Permissible Pulse Load RthJS = f (tp) Data Sheet 12 1.E-01 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics 5 5.1 Electrical Characteristics DC Characteristics Table 5 Parameter DC Characteristics at TA = 25 °C Symbol Min. Values Typ. 4.7 – – – 250 Max. – 30 100 2 400 V μA nA μA 4 – – – 160 Unit Note / Test Condition Collector-emitter breakdown voltage Collector-emitter cutoff current Collector-base cutoff current Emitter-base cutoff current DC current gain V(BR)CEO ICES ICBO IEBO hFE IC = 1 mA, IB = 0 VCE = 13 V, VBE = 0 V VCB = 5 V, IE = 0 VEB = 0.5 V, IC = 0 IC = 13 mA, VCE = 3 V pulse measured 5.2 General AC Characteristics Table 6 Parameter AC Characteristics at TA = 25 °C Symbol Min. Values Typ. 45 0.06 Max. – – GHz pF – – Unit Note / Test Condition Transition frequency Collector-base capacitance fT Ccb IC = 13 mA, VCE = 3 V f = 1 GHz VCB = 3 V, VBE = 0 V f = 1 MHz emitter grounded Collector-emitter capacitance Cce – 0.3 – pF VCE = 3 V, VBE = 0 V f = 1 MHz base grounded Emitter-base capacitance Ceb – 0.3 – pF VEB = 0.5 V, VCB = 0 V f = 1 MHz collector grounded Data Sheet 13 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a testfixture with Bias T’s in a 50 Ω system, TA = 25 °C VC Top View Bias -T OUT E C VB B Bias-T (Pin 1) E IN Figure 4 Table 7 Parameter BFP720F Testing Circuit AC Characteristics, VCE = 3 V, f = 150 MHz Symbol Min. Values Typ. 34 37.5 23 29 0.4 28 6 22.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 8 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Data Sheet Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 450 MHz Symbol Min. Values Typ. 29 32.5 14 Max. dB – – Unit Note / Test Condition Gms Gms – – IC = 5 mA IC = 13 mA Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics Table 8 Parameter Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 9 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 10 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure AC Characteristics, VCE = 3 V, f = 450 MHz (cont’d) Symbol Min. Values Typ. 22.5 28.5 0.4 27.5 5.5 21.5 Max. dB Unit Note / Test Condition ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – dB – – dBm – – ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 900 MHz Symbol Min. Values Typ. 26.5 29.5 22.5 27.5 0.45 25.5 5.5 20.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 1.5 GHz Symbol Min. Values Typ. 24 27.5 21.5 26 0.45 Max. dB – – dB – – dB – Unit Note / Test Condition Gms Gms S21 S21 NFmin – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA Revision 1.0, 2009-03-13 Data Sheet 15 BFP720F Electrical Characteristics Table 10 Parameter Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 11 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 12 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point AC Characteristics, VCE = 3 V, f = 1.5 GHz (cont’d) Symbol Min. Values Typ. 24 6 21 Max. – dBm – – – – – Unit Note / Test Condition Gass OP1dB OIP3 IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 1.9 GHz Symbol Min. Values Typ. 23 26.5 21 24.5 0.5 23 6.5 21 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 2.4 GHz Symbol Min. Values Typ. 22 25.5 20.5 23 0.55 22 6 21 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Data Sheet 16 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics Table 13 Parameter AC Characteristics, VCE = 3 V, f = 3.5 GHz Symbol Min. Values Typ. 20.5 23.5 18 20.5 0.6 19.5 6.5 21.5 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 14 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Table 15 Parameter Maximum Power Gain Low Noise Operation Point High Linearity Operation Point Transducer Gain Low Noise Operation Point Data Sheet Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 5.5 GHz Symbol Min. Values Typ. 19 21.5 15 16.5 0.7 15 7 21 Max. dB – – dB – – dB – – dBm – – Unit Note / Test Condition Gms Gms S21 S21 NFmin Gass OP1dB OIP3 – – – – – – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA AC Characteristics, VCE = 3 V, f = 10 GHz Symbol Min. Values Typ. 14 15 9.5 17 Max. dB – – dB – Unit Note / Test Condition Gma Gma S21 – – – IC = 5 mA IC = 13 mA ZS = ZL = 50 Ω IC = 5 mA Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics Table 15 Parameter High Linearity Operation Point Minimum Noise Figure Minimum Noise Figure Associated Gain Linearity 1 dB Gain Compression Point 3rd Order Intercept Point Note: 1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1 2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results AC Characteristics, VCE = 3 V, f = 10 GHz (cont’d) Symbol Min. Values Typ. 10.5 1.0 10.5 8 19.5 Max. – dB – – dBm – – – – – – – Unit Note / Test Condition S21 NFmin Gass OP1dB OIP3 IC = 13 mA ZS = Zopt IC = 5 mA IC = 5 mA ZS = ZL = 50 Ω IC = 13 mA IC = 13 mA Data Sheet 18 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics 5.4 Characteristic Curves 50 45 3.00V 40 35 30 2.00V f [GHz] 25 T 20 1.50V 15 10 5 1.00V 0.50V 0 0 10 C 1 10 2 10 I [mA] Figure 5 Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE Parameter in V 42 40 38 36 34 32 30 G 28 26 ms G [dB] 24 22 20 18 16 14 12 10 8 6 0 1 2 3 4 5 6 7 8 9 10 |S21| 2 Gma f [GHz] Figure 6 Data Sheet Power Gain Gma, Gms, IS21I² = f (freq), VCE = 3 V, IC = 13 mA 19 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics 42 40 38 36 34 32 30 28 0.15GHz 0.45GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz G [dB] 26 24 22 5.50GHz 20 18 16 10.00GHz 14 12 10 0 5 10 C 15 20 25 30 I [mA] Figure 7 Power Gain Gma, Gms = f (IC), VCE = 3 V, f = Parameter in GHz 40 38 36 34 0.15GHz 0.45GHz 32 30 28 26 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz G [dB] 24 22 20 18 16 10.00GHz 14 12 10 8 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE [V] Figure 8 Data Sheet Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz 20 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics 6 0. Swp Max 10GHz 2. 0 0 .8 10 GHz 0 0. 4 10 GHz 9 GHz 1.0 9 GHz 8 GHz S11 @ 3V, 13mA S11 @ 3V, 5mA 0 3. 0 4. 5. 0 0 5 GHz 5 GHz 4 GHz 2 GHz 1 GHz 3 GHz -0 .6 .0 -2 .4 -0 1 GHz 2 GHz - 0.8 Swp Min 0GHz Figure 9 Input Matching S11 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA Swp Max 10GHz 2. 0 0 .8 6 0. 1.0 -1.0 S22 @ 3V, 13mA S22 @ 3V, 5mA 0 3. 0 4. 5. 0 10 GHz 10.0 -3 .0 2.0 3.0 4.0 9 GHz 9 GHz - 10. 10 .4 -0 -0 .6 .0 -2 Swp Min 0GHz -0.8 Figure 10 Data Sheet Output Matching S22 = f (freq), VCE = 3 V, IC = 5 mA / 13 mA 21 Revision 1.0, 2009-03-13 -1.0 -4 4. 0 0 -5 . 0 2 -0 . 8 GHz 7 GHz 6 GHz 8 GHz 5 GHz 4 GHz 7 GHz 3 GHz 1 GHz 6 GHz 2 GHz 5 GHz 4 GHz 3 GHz 2 GHz 5.0 0.2 0.4 0.6 0.8 1.0 10 GHz 0 -4 .0 0 -5 . 50 2 -0 . 6 GHz 3 GHz 1 0.0 10 MHz 1 GHz - 10. 10 0 4 GHz 10.0 -3 .0 0.2 0.4 0.6 0.8 2.0 3.0 4.0 5.0 1.0 0. .4 0. 2 . 8 GHz 7 GHz 1 0.0 6 GHz 7 GHz 10 MHz 0. 2 . BFP720F Electrical Characteristics 0. 6 Swp Max 10GHz 2. 0 0.8 1.0 Δ: Ic = 13mA Δ: Ic = 13mA : Ic = 5mA : Ic = 5mA 0.2 0.6 0.4 0.8 10.0 2.0 5.0 1.0 4.0 3.0 0 .4 -0 -0 .6 -0.8 .0 -2 Swp Min 0.45GHz Figure 11 Source Impedance Zopt for NFmin vs. Frequency, VCE = 3 V, IC = 5 mA / 13 mA 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 F [dB] 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 Ic [mA] f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.9GHz f = 0.45GHz -1.0 12 14 16 18 20 Figure 12 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt Data Sheet 22 -5. -4 . .0 0 -0. 2 10GHz -10.0 0 -3 . .0 0. 4 4 0 3. 5.5GHz 0 4. 5.0 0.2 1.9GHz 2.4GHz 5.5GHz 1.9GHz 0.9GHz 0.45GHz 2.4GHz 10.0 Revision 1.0, 2009-03-13 BFP720F Electrical Characteristics 1.4 1.3 1.2 1.1 1 0.9 0.8 F [dB] 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 f [GHz] I = 13mA C I = 5.0mA C 6 8 10 Figure 13 Noise Figure NFmin = f (freq), VCE = 3 V, ZS = Zopt Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 23 Revision 1.0, 2009-03-13 BFP720F Simulation Data 6 Simulation Data For SPICE-model as well as for S-parameters including noise parameters please refer to our internet website: www.infineon.com/rf.models . Please consult our website and download the latest versions before actually starting your design. The simulation data have been generated and verified using typical devices. The BFP720F nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. Data Sheet 24 Revision 1.0, 2009-03-13 BFP720F Package Information 7 Package Information 1.4 ±0.05 1 2 0.2 ±0.05 0.5 ±0.05 0.5 ±0.05 1.2 ±0.05 0.2 ±0.05 4 3 0.15 ±0.05 TSFP-4-1, -2-PO V04 Figure 14 Package Outline TSFP-4(top / side view) 0.35 0.45 0.5 0.5 TSFP-4-1, -2-FP V04 Figure 15 Footprint Figure 16 Marking Example (Marking BFP720F: R9s) 0.9 4 0.2 1.4 Pin 1 8 1.55 0.7 TSFP-4-1, -2-TP V05 Figure 17 Tape Dimensions Data Sheet 25 0.8 ±0.05 0.2 ±0.05 0.55 ±0.04 Revision 1.0, 2009-03-13 www.infineon.com Published by Infineon Technologies AG