BFR193F

BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 * Short term description 3 1 2 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR193F Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2) TS ≤ 72°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 3) 1Pb-containing 2T 3For Marking RCs Pin Configuration 1=B 2=E 3=C Package TSFP-3 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA T stg Symbol RthJS Value 12 20 20 2 80 10 580 150 -55 ... 150 -55 ... 150 Value ≤ 135 Unit V mA mW °C Unit K/W package may be available upon special request is measured on the collector lead at the soldering point to the pcb S calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-03-30 BFR193F Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, I E = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 30 mA, VCE = 8 V, pulse measured hFE 70 100 140 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 2007-03-30 BFR193F Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz, VBE = 0, emitter grounded Collector emitter capacitance VCE = 10 V, f = 1 MHz, VBE = 0, base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 10 mA, VCE = 8 V, Z S = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable1) IC = 30 mA, VCE = 8 V, Z S = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available1) IC = 30 mA, VCE = 8 V, Z S = ZSopt , ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, Z S=ZL=50Ω, f = 900 MHz f = 1.8 GHz Third order intercept point at output2) VCE = 8 V, I C = 30 mA, f = 900 MHz, ZS = ZL = 50 Ω 1dB Compression point at output 3) IC = 30 mA, VCE = 8 V, Z S = ZL = 50 Ω, f = 900 MHz 1G 6 - 8 0.63 0.25 2.25 1 - GHz pF Ccb Cce Ceb F G ms 1 1.6 12.5 - dB dB G ma - 19 - dB |S 21e|2 IP 3 14.5 8.5 29 - dB dBm P-1dB - 14.5 - 1/2), G ma = |S21 / S12| (k-(k²-1) ms = |S 21 / S 12| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3DC current at no input power 3 2007-03-30 BFR193F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 0.2738 24 1.935 3.8742 0.94371 1 1.1824 18.828 0.96893 1.1828 1.0037 0 3 fA V V Ω fF ps mA V ns BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = NK = FC = 125 0.26949 14.267 0.037925 1.8368 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A A Ω V deg fF NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.037409 0.91763 0.11938 0.48654 0.8 935.03 0.053563 0.75 1.11 300 fA fA mA Ω V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B C7 R1 L3 C B’ Transistor Chip E’ C’ C6 C2 L1 C3 C5 L1 = L2 = L3 = C1 = C2 = C3 = C4 = C5 = C6 = 0.556 0.657 0.381 43 123 66 10 36 47 nH nH nH fF fF fF fF fF fF Valid up to 6GHz E For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com EHA07536 4 2007-03-30 Package TSFP-3 BFR193F Package Outline 1.2 ±0.05 10˚ MAX. 0.8 ±0.05 0.2 ±0.05 1.2 ±0.05 0.2 ±0.05 0.4 0.45 3 0.55 ±0.04 1 2 0.2 ±0.05 0.4 ±0.05 0.4 ±0.05 0.15 ±0.05 Foot Print 0.4 0.4 Marking Layout (Example) Manufacturer 1.05 Pin 1 BCR847BF Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.3 1.2 1.5 8 0.2 Pin 1 1.35 0.7 5 2007-03-30 BFR193F Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-03-30