BFR93AW

BFR93AW NPN Silicon RF Transistor For low distortion broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 mA to 30 mA 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1
Junction - soldering point2)

2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR93AW Maximum Ratings Parameter Marking R2s 1=B Pin Configuration 2=E Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Package SOT323 Value Unit 3=C Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 12 20 20 2 50 6 300 150 -65 ... 150 -65 ... 150 V mA mW °C 104 °C 1) RthJS 155 K/W Jul-30-2001 BFR93AW Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V hFE 50 100 200 IEBO 10 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jul-30-2001 BFR93AW Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter AC characteristics (verified by random sampling) Transition frequency IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 5 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 , 13 7.5 IC = 30 mA, VCE = 8 V, ZS = ZL = 50 f = 900 MHz f = 1.8 GHz 1G ma Symbol min. fT Ccb Cce Ceb F Gma 4.5 - Values typ. 6 0.62 0.28 1.7 max. 0.9 - Unit GHz pF dB 2 3.3 - 15 10 - = |S21 / S12 | (k-(k2-1)1/2)  3 Jul-30-2001 BFR93AW SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 8.6752 20.011 1.5466 26.834 1.95 3.4649 3.1538 33.388 2.5184 0.72744 1.1061 0 3 fA V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 137.63 0.33395 59 0.015129 7.2326 1.0075 0.70393 0.28319 0 0.34565 0 0 0.75935 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.93633 2619.3 0.88761 0.70823 0.043806 0.13193 0.5071 0.17765 1039.5 0.21422 0.75 1.11 300 fA fA mA - V deg fF - V fF V eV K All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Jul-30-2001
nH nH nH nH nH nH fF

BFR93AW Total power dissipation Ptot = f (TS ) 400 mW 300 P tot 250 TS 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Jul-30-2001 BFR93AW Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) V CE = Parameter f = 1MHz 1.3 pF 1.1 1 7.0 GHz 10V 6.0 5.5 5.0 8V 5V 3V 2V Ccb 0.9 0.8 0.7 fT 4.5 4.0 3.5 0.6 0.5 0.4 0.3 0.2 0.1 0 0 4 8 12 16 V 3.0 2.5 2.0 1.5 1.0 0.5 24 0.0 0 10 20 30 40 mA 0.7V 1V 60 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 18 dB 10V 5V 3V 2V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 11 dB 10V 9 8 5V 3V 2V 14 12 7 G G 10 8 1V 6 5 4 3 1V 6 4 2 0 0 2 0.7V 1 0 10 20 30 40 mA 0.7V 60 -1 0 10 20 30 40 mA 60 IC IC 6 Jul-30-2001 BFR93AW Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 16 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz IC=30mA dB 0.9GHz 35 0.9GHz dBm 5V 4V 12 25 1.8GHz IP 3 G 10 20 8 1.8GHz 15 6 10 4 5 1V 2 0 0 2 4 6 8 V 12 0 0 10 20 30 VCE Power Gain Gma , Gms = f(f) VCE = Parameter 34 dB Power Gain |S21|2= f(f) V CE = Parameter 32 dB IC=30mA IC =30mA 28 26 24 22 G 20 16 S21 18 14 12 10V 2V 10 8 4 6 2 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 -2 0.0 0.5 1.0 1.5 2.0 f 7
3V 2V 40 mA 60 IC 10V 2V 1V 2.5 0.7V GHz 3.5 f Jul-30-2001