BFR92AW

BFR92AW NPN 5 GHz wideband transistor Rev. 03 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - © Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - © NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES • High power gain • Gold metallization ensures excellent reliability • SOT323 (S-mini) package. APPLICATIONS It is designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz. DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR92AW uses the same crystal as the SOT23 version, BFR92A. PINNING PIN 1 2 3 base emitter collector DESCRIPTION handbook, 2 columns BFR92AW 3 1 Top view Marking code: P2. 2 MBC870 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation current gain feedback capacitance transition frequency maximum unilateral power gain up to Ts = 93 °C; note 1 IC = 15 mA; VCE = 10 V IC = 0; VCE = 10 V; f = 1 MHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 500 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C F Tj Note 1. Ts is the temperature at the soldering point of the collector pin. noise figure junction temperature IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt open base CONDITIONS open emitter − − − − 65 − 3.5 − − − − MIN. − − − − 90 0.35 5 14 8 2 − TYP. MAX. 20 15 25 300 135 − − − − − 150 pF GHz dB dB dB °C UNIT V V mA mW Rev. 03 - 12 March 2008 2 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature up to Ts = 93 °C; see Fig.2; note 1 open base open collector CONDITIONS open emitter MIN. − − − − − −65 − BFR92AW MAX. 20 15 2 25 300 +150 150 UNIT V V V mA mW °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 93 °C; note 1 VALUE 190 UNIT K/W Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin. 400 P tot (mW) 300 MLB540 200 100 0 0 50 100 150 200 T s ( o C) Fig.2 Power derating curve Rev. 03 - 12 March 2008 3 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor CHARACTERISTICS Tj = 25 °C (unless otherwise specified). SYMBOL ICBO hFE Cc Ce Cre fT GUM PARAMETER collector leakage current DC current gain collector capacitance emitter capacitance feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IE = 0; VCB = 10 V IC = 15 mA; VCE = 10 V IE = ie = 0; VCB = 10 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 10 V; f = 1 MHz IC = 15 mA; VCE = 10 V; f = 1 GHz; Tamb = 25 °C IC = 15 mA; VCE = 10 V; f = 2 GHz; Tamb = 25 °C F noise figure IC = 5 mA; VCE = 10 V; f = 1 GHz; Γs = Γopt IC = 5 mA; VCE = 10 V; f = 2 GHz; Γs = Γopt Note − 65 − − − − − − − MIN. − 90 0.6 0.9 0.35 5 14 8 2 3 TYP. BFR92AW MAX. 50 135 − − − − − − − − UNIT nA pF pF pF GHz dB dB dB dB IC = 15 mA; VCE = 10 V; f = 500 MHz 3.5 s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------------ dB. ( 1 – s 11 2 ) ( 1 – s 22 2 ) Rev. 03 - 12 March 2008 4 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, halfpage 120 MCD074 1.0 C re (pF) 0.8 MGC883 h FE 80 0.6 0.4 40 0.2 0 0 10 20 I C (mA) 30 0 0 4 8 12 16 20 VCB (V) VCE = 10 V. IC = 0; f = 1 MHz. Fig.3 DC current gain as a function of collector current; typical values. Fig.4 Feedback capacitance as a function of collector-base voltage; typical values. handbook, halfpage 6 MGC884 f T (GHz) 4 2 0 1 10 I C (mA) 10 2 VCE = 5 V; f = 500 MHz; Tamb = 25 °C. Fig.5 Transition frequency as a function of collector current; typical values. Rev. 03 - 12 March 2008 5 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, halfpage 30 MGC885 handbook, halfpage 30 MGC886 gain (dB) 20 MSG GUM gain (dB) 20 MSG GUM 10 10 0 0 5 10 15 I C (mA) 20 0 0 5 10 15 I C (mA) 20 VCE = 10 V; f = 500 MHz. VCE = 10 V; f = 1 GHz. Fig.6 Gain as a function of collector current; typical values. Fig.7 Gain as a function of collector current; typical values. handbook, halfpage 50 MGC887 gain (dB) handbook, halfpage 50 MGC888 gain (dB) GUM 40 GUM 40 MSG 30 MSG 30 20 20 10 Gmax 0 10 10 2 10 Gmax 0 10 3 f (MHz) 10 4 10 10 2 10 3 f (MHz) 10 4 VCE = 10 V; IC = 5 mA. VCE = 10 V; IC = 15 mA. Fig.8 Gain as a function of frequency; typical values. Fig.9 Gain as a function of frequency; typical values. Rev. 03 - 12 March 2008 6 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, halfpage 6 MGC889 handbook, halfpage 6 MGC890 F (dB) 4 f = 2 GHz F (dB) 4 IC = 15 mA 1 GHz 500 MHz 2 2 10 mA 5 mA 0 1 10 I C (mA) 10 2 0 102 103 f (MHz) 104 VCE = 10 V. VCE = 10 V. Fig.10 Minimum noise figure as a function of collector current; typical values. Fig.11 Minimum noise figure as a function of frequency; typical values. 90 o handbook, full pagewidth 1.0 1 135 o F = 4 dB 0.5 F = 3 dB 2 45 o 0.8 0.6 F = 2 dB 0.2 F min = 1.6 dB Γ opt 2 5 5 0.4 0.2 0o 0 180 o 0 0.2 0.5 1 0.2 5 0.5 135 o 1 2 45 o MGC891 1.0 90 o f = 500 MHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. Fig.12 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 7 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 (4) (2) (3) 0.2 (5) (6) 0.2 (7) 0.2 (8) 5 0.5 1 5 (1) 2 5 0o 45 o 0.8 0.6 0.4 0.2 0 180 o 0 (1) (2) (3) (4) (5) Γopt; Fmin = 2.1 dB. F = 2.5 dB. F = 3 dB. F = 4 dB. Γms; Gmax = 15.7 dB. 0.5 135 o 1 2 45 o MGC892 (6) G = 15 dB. (7) G = 14 dB. (8) G = 13 dB. f = 1 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. 1.0 90 o Fig.13 Common emitter noise figure circles; typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 (4) (3) 0.2 (2) 5 0.4 0.2 (1) 180 o 0 0.2 (5) 0.5 1 2 5 0o 0 2 45 o 0.8 0.6 0.2 (1) Γopt; Fmin = 3 dB. (2) F = 3.5 dB. (3) F = 4 dB. (4) F = 5 dB. (5) Γms; Gmax = 9.1 dB. (6) G = 8 dB. (7) G = 7 dB. (8) G = 6 dB. f = 2 GHz; VCE = 10 V; IC = 5 mA; Zo = 50 Ω. (6) (7) (8) 0.5 2 1 5 135 o 45 o MGC893 1.0 90 o Fig.14 Common emitter noise figure circles; typical values. Rev. 03 - 12 March 2008 8 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 1 2 5 0o 0 0.2 3 GHz 180 o 0.2 0.5 5 0 40 MHz 0.2 5 0.5 135 o 1 2 45 o MGC894 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 45 o 40 MHz 180 o 50 40 30 20 10 3 GHz 0o 135 o 45 o 90 o VCE = 10 V; IC = 15 mA. MGC895 Fig.16 Common emitter forward transmission coefficient (s21); typical values. Rev. 03 - 12 March 2008 9 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFR92AW handbook, full pagewidth 90 o 3 GHz 135 o 45 o 180 o 0.25 40 MHz 0.20 0.15 0.10 0.05 0o 135 o 45 o 90 o VCE = 10 V; IC = 15 mA. MGC896 Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 0.5 2 45 o 0.8 0.6 0.4 0.2 180 o 0 0.2 0.5 1 2 5 40 MHz 3 GHz 0o 0 0.2 5 0.2 5 0.5 135 o 1 2 45 o MGC897 1.0 90 o VCE = 10 V; IC = 15 mA; Zo = 50 Ω. Fig.18 Common emitter output reflection coefficient (s22); typical values. Rev. 03 - 12 March 2008 10 of 13 NXP Semiconductors Product specification NPN 5 GHz wideband transistor PACKAGE OUTLINE BFR92AW handbook, full pagewidth 2.2 1.8 A 1.35 1.15 B X 0.25 0.10 2.2 2.0 0.2 M B 3 0.2 1.0 0.8 0.1 0.0 1.1 max 1 0.65 0.40 0.30 2 0.2 M A detail X 0.3 0.1 MBC871 1.3 Dimensions in mm. Fig.19 SOT323. Rev. 03 - 12 March 2008 11 of 13 NXP Semiconductors BFR92AW NPN 5 GHz wideband transistor Legal information Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Rev. 03 - 12 March 2008 12 of 13 NXP Semiconductors BFR92AW NPN 5 GHz wideband transistor Revision history Revision history Document ID BFR92AW_N_3 Modifications: BFR92AW_2 BFR92AW_1 Release date 20080312 Data sheet status Product data sheet Product specification Change notice Supersedes BFR92AW_2 BFR92AW_1 - • Quick reference data and Characteristics Table; DC current gain value changed 19950918 19921001 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 March 2008 Document identifier: BFR92AW_N_3