BGA713L7

BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Data Sheet Revision 3.0, 2010-10-04 RF & Protection Devices Edition 2010-10-04 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGA713L7 Single-Band UMTS LNA (700, 800 MHz) BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Revision History: 2010-10-04, Revision 3.0 Previous Revision: 2010-05-26, Revision 2.0 Page all Subjects (major changes since last revision) Added UMTS bands XII, XVII and XX specification Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Data Sheet 3 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 3 3.1 3.2 3.3 3.4 3.5 4 4.1 4.2 4.3 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Switching Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Supply Current and Power Gain Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Logic Signal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Measured RF Characteristics UMTS Bands XII / XVII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Measured RF Characteristics UMTS Bands XIII / XIV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Measured RF Characteristics UMTS Band XX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Measured Performance Band XIII High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Measured Performance Band XIII High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 16 Measured Performance Band XIII Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Measured Performance Band XIII Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 18 Application Circuit and Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands XII and XVII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands XIII and XIV Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UMTS Bands XX Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Physical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Marking Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 19 20 21 22 23 25 25 25 26 Data Sheet 4 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Block Diagram of Single-Band LNA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Application Circuit with Chip Outline (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Application Board Layout on 3-layer FR4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Cross-Section view of Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Detail of Application Board Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Recommended Footprint and Stencil Layout for the TSLP-7-1 Package . . . . . . . . . . . . . . . . . . . . 25 Package Outline (top, side and bottom view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Marking Pattern (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Data Sheet 5 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Table 6 Table 7 Table 8 Table 9 Table 10 Table 11 Table 12 Table 13 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 DC Characteristics, TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical switching times; TA = -30 ... 85 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ . . . . . . . . . . . . . . 12 Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ . . . . . . . . . . . . . . 13 Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ . . . . . . . . . . . . . . 14 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Parts List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Pin Definition and Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Data Sheet 6 Revision 3.0, 2010-10-04 Single-Band UMTS LNA (700, 800 MHz) BGA713L7 1 • • • • • • • • • • Features Gain: 15.5 / -10 dB in high / low gain mode Noise figure: 1.1 dB in high gain mode Supply current: 4.8 / 0.5 mA in high / low gain mode Standby mode (< 2 µA typ.) Output internally matched to 50 Ω Inputs pre-matched to 50 Ω 2 kV HBM ESD protection Low external component count Small leadless TSLP-7-1 package (2.0 x 1.3 x 0.39 mm) Pb-free (RoHS compliant) package Main features: Description The BGA713L7 is a low current single-band low noise amplifier MMIC for UMTS bands XII, XIII, XIV, XVII and XX. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package. This document specifies electrical parameters, pinout, application circuit and packaging of the chip. Product Name BGA713L7 Data Sheet Package TSLP-7-1 7 Chip T1533 Marking B3 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Features Figure 1 Block Diagram of Single-Band LNA Data Sheet 8 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2 2.1 Electrical Characteristics Absolute Maximum Ratings Table 1 Parameter Absolute Maximum Ratings Symbol Min. Values Typ. – – – – – – – – Max. 3.6 10 0.9 4 150 85 150 V mA V dBm °C °C °C – – All pins except RF input pins – – – – – -0.3 – -0.3 -0.3 – – -30 -65 Unit Note / Test Condition Supply voltage Supply current Pin voltage Pin voltage RF input pins RF input power Junction temperature Ambient temperature range Storage temperature range VCC ICC VPIN VRFIN PRFIN Tj TA Tstg VCC+0.3 V Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Thermal Resistance Table 2 Parameter Thermal Resistance Symbol Min. Values Typ. 150 Max. – K/W – – Unit Note / Test Condition Thermal resistance junction to soldering point RthJS 2.3 ESD Integrity Table 3 Parameter ESD Integrity Symbol Min. Values Typ. 2000 Max. – V All pins – Unit Note / Test Condition ESD hardness HBM1) 1) According to JESD22-A114 VESD-HBM Data Sheet 9 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.4 DC Characteristics Table 4 Parameter DC Characteristics, TA = 25 °C Symbol Min. Values Typ. 2.8 4.8 0.50 0.1 2.8 0.0 5.0 0.1 Max. 3.0 – – – – 0.5 – – V mA mA µA V V µA µA All logic pins – – – – All logic pins 2.6 – – – 1.5 – – – Unit Note / Test Condition Supply voltage Supply current high gain mode Supply current low gain mode Supply current standby mode Logic level high Logic level low Logic currents VCC ICCHG ICCLG ICCOFF VHI VLO IHI ILO 2.5 Band Select / Gain Control Truth Table Table 5 Truth Table State Bands XII, XIII, XIV, XVII and XX VGS L H L H HG OFF ON STANDBY 1) Control Voltage VEN H H L L LG ON OFF 1) In order to achieve minimum standby current it is encouraged to apply logic low-level at the VGS pin in standby mode although this is not mandatory. 2.6 Switching Time Table 6 Parameter Typical switching times; TA = -30 ... 85 °C Symbol Min. Values Typ. 1 Max. – µs Switching LG ↔ HG – Unit Note / Test Condition Settling time gainstep tGS Data Sheet 10 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.7 Supply Current and Power Gain Characteristics Supply current high gain mode versus resistance of reference resistor RREF see Figure 3 on Page 20; low gain mode supply current is independent of reference resistor). Supply Current ICC = f (RREF) VCC = 2.8 V 7 6.5 6 15.5 Power Gain |S21| = f (RREF) VCC = 2.8 V 16 Power Gain [dB] 5.5 15 Icc [mA] 5 4.5 4 3.5 3 2.5 2 14.5 14 13.5 13 1 10 100 1 10 100 RREF [kΩ] RREF [kΩ] 2.8 Logic Signal Characteristics Current consumption of logic inputs VEN, VGS Logic currents IEN = f (VEN) Logic currents IGS = f (VGS) VCC = 2.8 V 6 VCC = 2.8 V 6 4 4 IEN [µA] 2 IGS [µA] 2 0 0 0.5 1 1.5 2 2.5 3 0 0 0.5 1 1.5 2 2.5 3 V EN [V] VGS [V] Data Sheet 11 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.9 Measured RF Characteristics UMTS Bands XII / XVII Table 7 Parameter Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ1) Symbol Min. 728 734 Values Typ. Max. 746 746 4.8 0.50 15.3 -9.9 -40 -9.9 1.1 9.9 -13 -14 -27 -19 >2.2 -7 -12 -8 -2 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band XII Pass band range band XVII Current consumption Gain Reverse isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point2) Inband IIP32) f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) Performance based on application circuit in Figure 2 on Page 19 2) Verification based on AQL; not 100% tested in production 3) Guaranteed by device design; not tested in production Data Sheet 12 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.10 Measured RF Characteristics UMTS Bands XIII / XIV Table 8 Parameter Typical Characteristics 700 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ1) Symbol Min. 746 758 Values Typ. Max. 756 768 4.8 0.50 15.5 -9.8 -39 -9.8 1.1 9.8 -15 -12 -15 -20 >2.3 -7 -11 -7 -2 – – – – – – – – – – – – – – – – dBm dBm dBm MHz MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range band XIII Pass band range band XIV Current consumption Gain Reverse isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG – – – – – – – – – – – – – – – – Output return loss Stability factor 3) 2) S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG Input compression point2) Inband IIP32) f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 1) Performance based on application circuit in Figure 3 on Page 20 2) Verification based on AQL; not 100% tested in production 3) Guaranteed by device design; not tested in production Data Sheet 13 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.11 Measured RF Characteristics UMTS Band XX Table 9 Parameter Typical Characteristics 800 MHz Band, TA = 25 °C, VCC = 2.8 V, RREF = 5.6 kΩ1) Symbol Min. 791 Values Typ. 4.8 0.50 15.9 -8.4 -38 -8.4 1.0 8.4 -16 -11 -13 -27 >2.3 -6 -10 -8 -1 Max. 821 – – – – – – – – – – – – – – – – dBm dBm dBm MHz mA mA dB dB dB dB dB dB dB dB dB dB High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode High gain mode Low gain mode 50 Ω, high gain mode 50 Ω, low gain mode 50 Ω, high gain mode 50 Ω, low gain mode DC to 8 GHz; all gain modes High gain mode Low gain mode High gain mode Low gain mode Unit Note / Test Condition Pass band range Current consumption Gain Reverse isolation Noise figure Input return loss 2) 2) ICCHG ICCLG S21HG S21LG S12HG S12LG NFHG NFLG S11HG S11LG S22HG S22LG k IP1dBHG IP1dBLG IIP3HG IIP3LG – – – – – – – – – – – – – – – – Output return loss2) Stability factor 3) Input compression point2) Inband IIP3 f1 - f2 = 1 MHz Pf1 = Pf2 = -37 dBm 2) 1) Performance based on application circuit in Figure 4 on Page 21 2) Verification based on AQL; not 100% tested in production 3) Guaranteed by device design; not tested in production Data Sheet 14 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.12 Measured Performance Band XIII High Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, RREF = 5.6 kΩ Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) 18 20 10 0 17 Power Gain [dB] 16 Power Gain [dB] 0.745 0.75 0.755 0.76 0.765 0.77 −10 −20 −30 −40 15 14 13 −50 −60 12 0.74 0 1 2 3 4 5 6 7 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Noise Figure NF = f ( f ) 0 1.4 −5 1.3 |S11|, |S22| [dB] −10 S22 S11 −20 1.2 −15 NF [dB] 1.1 1 −25 0.9 −30 0.74 0.745 0.75 0.755 0.76 0.765 0.77 0.8 0.74 0.745 0.75 0.755 0.76 0.765 0.77 Frequency [GHz] Frequency [GHz] Data Sheet 15 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.13 Measured Performance Band XIII High Gain Mode vs. Temperature VCC = 2.8 V, VGS = 2.8 V, VEN = 2.8 V, f = 750 MHz, RREF = 5.6 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) 18 7 6.5 17 6 Power Gain [dB] ICC [mA] −20 0 20 40 60 80 100 16 5.5 5 4.5 4 15 14 3.5 13 −40 3 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Input Compression P1dB = f (TA) Noise Figure NF = f (TA) −2 1.8 −4 1.6 1.4 P1dB [dBm] NF [dB] −20 0 20 40 60 80 100 −6 1.2 −8 1 −10 0.8 −12 −40 0.6 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Data Sheet 16 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.14 Measured Performance Band XIII Low Gain Mode vs. Frequency TA = 25 °C, VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, RREF = 5.6 kΩ Power Gain |S21| = f ( f ) Power Gain wideband |S21| = f ( f ) −7 0 −8 −10 Power Gain [dB] −9 Power Gain [dB] 0.745 0.75 0.755 0.76 0.765 0.77 −20 −10 −30 −11 −40 −12 −50 −13 0.74 −60 0 1 2 3 4 5 6 7 8 Frequency [GHz] Frequency [GHz] Matching |S11| = f ( f ), |S22| = f ( f ) Noise Figure NF = f ( f ) 0 11 −5 S 10 |S11|, |S22| [dB] −10 11 9 −15 NF [dB] S22 0.745 0.75 0.755 0.76 0.765 0.77 8 −20 7 −25 6 −30 0.74 5 0.74 0.745 0.75 0.755 0.76 0.765 0.77 Frequency [GHz] Frequency [GHz] Data Sheet 17 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Electrical Characteristics 2.15 Measured Performance Band XIII Low Gain Mode vs. Temperature VCC = 2.8 V, VGS = 0 V, VEN = 2.8 V, f = 750 MHz, RREF = 5.6 kΩ Power Gain |S21| = f (TA) Supply Current ICC = f (TA) −7 0.7 0.65 −8 0.6 Power Gain [dB] −9 0.55 ICC [mA] −10 0.5 0.45 −11 0.4 −12 0.35 0.3 −40 −13 −40 −20 0 20 40 60 80 100 −20 0 20 40 60 80 100 TA [°C] TA [°C] Input Compression P1dB = f (TA) Noise Figure NF = f (TA) 0 −2 −4 −6 11 10 9 P1dB [dBm] −10 −12 −14 −16 −18 −20 −40 −20 0 20 40 60 80 100 NF [dB] −8 8 7 6 5 −40 −20 0 20 40 60 80 100 TA [°C] TA [°C] Data Sheet 18 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Application Circuit and Block Diagram 3 3.1 Application Circuit and Block Diagram UMTS Bands XII and XVII Application Circuit Schematic RFIN 700 MHz C1 3.3 pF 1 L1 10 nH RFIN 6 RFOUT C3 8.2 pF L2 7 .5nH RFOUT 700 MHz C2 100 pF VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF R REF 5.6k Ω VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2.8 V C4 10nF BGA 713L 7_Appl _BlD_Bands _XII_XVII.vsd Figure 2 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 10 L1 ... L2 C1 ... C4 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 19 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Application Circuit and Block Diagram 3.2 UMTS Bands XIII and XIV Application Circuit Schematic RFIN 700 MHz C1 3.0 pF 1 L1 10 nH RFIN 6 RFOUT C3 8.2 pF L2 7 .5nH RFOUT 700 MHz C2 100 pF VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF R REF 5.6k Ω VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2.8 V C4 10nF BGA 713L 7_Appl _BlD_Bands _XIII_XIV.vsd Figure 3 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 11 L1 ... L2 C1 ... C4 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 20 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Application Circuit and Block Diagram 3.3 UMTS Bands XX Application Circuit Schematic RFIN 800 MHz C1 3.3 pF 1 L1 9.1nH RFIN 6 RFOUT C3 8.2 pF L2 9 .1nH RFOUT 800 MHz C2 100 pF VEN = 0 / 2.8 V 2 VEN Biasing & Logic Circuitry 5 RREF R REF 5.6k Ω VGS = 0 / 2.8 V 3 VGS 7 GND 4 VCC VCC = 2.8 V C4 10nF BGA713 L7_ Appl_BlD_ Band_ XX.vsd Figure 4 Application Circuit with Chip Outline (top view) Note: Package paddle (Pin 7) has to be RF grounded. Table 12 L1 ... L2 C1 ... C4 RREF Parts List Part Type Chip inductor Chip capacitor Chip resistor Manufacturer Various Various Various Size 0402 0402 0402 Comment Wirewound, Q ≈ 50 Part Number Data Sheet 21 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Application Circuit and Block Diagram 3.4 Pin Description Table 13 Pin No. 1 2 3 4 5 6 7 Pin Definition and Function Name RFIN VEN VGS VCC RREF RFOUT GND Pin Type Buffer Type Function LNA input Band select control Gain step control Supply voltage Bias current reference resistor (high gain mode) LNA output Ground Package paddle; ground connection and control circuitry Data Sheet 22 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Application Circuit and Block Diagram 3.5 Application Board Figure 5 Application Board Layout on 3-layer FR4 Note: Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 mm Cu metallization, gold plated. Board size: 21 x 18 mm. Figure 6 Cross-Section view of Application Board Data Sheet 23 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Application Circuit and Block Diagram Figure 7 Detail of Application Board Layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. Data Sheet 24 Revision 3.0, 2010-10-04 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Physical Characteristics 4 4.1 Physical Characteristics Package Footprint NSM D 0.2 0.2 0.2 SMD 1.4 1.4 1.4 0.2 0.2 1.9 0.25 1.4 0.2 0.25 0.2 1.9 1.9 0.2 0.25 1.9 0.2 0.2 0.2 0.2 0.3 0.3 Copper 0.3 0.25 Stencil apertures R0.1 0.3 0.3 Copper 0.3 0.2 0.25 0.25 0.25 Stencil apertures R0.1 Solder mask Solder mask TSLP-7-1-FP V01 Figure 8 Recommended Footprint and Stencil Layout for the TSLP-7-1 Package 4.2 Package Dimensions Top view 0.4 0.05 MAX. +0.1 Bottom view 1.3 ±0.05 1 ±0.05 4 5 6 1.7 ±0.05 6 x 0.2 ±0.035 1) 7 3 Pin 1 marking 2 1 6 x 0.2 ±0.035 1) TSLP-7-1-PO V04 1) Dimension applies to plated terminal Figure 9 Package Outline (top, side and bottom view) Data Sheet 25 2 ±0.05 1.2 ±0.035 1) 1.1 ±0.035 1) Revision 3.0, 2010-10-04 0.2 0.25 BGA713L7 Single-Band UMTS LNA (700, 800 MHz) Physical Characteristics 4.3 Product Marking Pattern Figure 10 Marking Pattern (top view) Data Sheet 26 Revision 3.0, 2010-10-04 www.infineon.com Published by Infineon Technologies AG