BSP603S2L

BSP603S2L OptiMOS Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID 55 33 5.2 SOT 223 V mΩ A • Enhancement mode • Logic Level Type BSP603S2L Package SOT 223 Ordering Code Q67060-S7213 Marking 2N603L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value 5.2 4.1 Unit A Pulsed drain current TA=25°C ID puls VGS Ptot Tj , Tstg 21 ± 20 1.8 -55... +150 55/150/00 V W °C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-10-29 BSP603S2L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) Thermal resistance, chip to ambient air: @ min. footprint @ 6 cm2 cooling area 1) Symbol min. RthJS RthJA Values typ. 15 max. 20 Unit - K/W - - 120 70 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID=50µA Zero gate voltage drain current V DS=55V, V GS=0V, Tj=25°C V DS=55V, V GS=0V, Tj=150°C µA 0.1 10 10 27 23 1 100 100 40 33 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=2.6A Drain-source on-state resistance V GS=10V, ID=2.6A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-10-29 BSP603S2L Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time gfs Ciss Coss Crss td(on) VDD =30V, VGS=4.5V, ID=5.2A, RG=5.6Ω VDS ≥2*I D*RDS(on)max, ID=5.2 VGS =0V, VDS =25V, f=1MHz Symbol Conditions min. 8.9 - Values typ. 17.8 1034 244 75 10.8 max. - Unit S 1390 pF 325 110 16 ns Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage tr td(off) tf Qgs Qgd Qg VDD =30V, VGS=4.5V, ID=5.2mA, RG=5.6Ω - 16 28 15 24 40 23 VDD =44V, ID=5.2A - 3.5 10.6 31 3 4.6 16 42 - nC VDD =44V, ID=5.2A, VGS =0 to 10V V(plateau) VDD =44V, ID=5.2A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF=5.2A VR =30V, IF=lS , diF/dt=100A/µs IS TA=25°C - 0.8 46 44 5.2 21 1.1 58 55 A V ns nC Page 3 2003-10-29 BSP603S2L 1 Power dissipation Ptot = f (TC) parameter: V GS≥ 4 V 2.4 BSP603S2L 2 Drain current ID = f (TC) parameter: V GS≥ 10 V 6 BSP603S2L W 2 1.8 A 5 4.5 4 Ptot 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 ID °C 3.5 3 2.5 2 1.5 1 0.5 160 0 0 20 40 60 80 100 120 °C 160 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = -10 2 BSP603S2L 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T K/W tp = 160.0 µs 10 2 BSP603S2L A S( ) on /I D = VD S 10 1 10 1 RD ZthJC 1 ms 10 0 ID 10 0 10 ms 10 -1 D = 0.50 0.20 0.10 0.05 single pulse 0.02 0.01 10 10 -1 -2 10 -3 DC 10 -2 -1 10 10 -4 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 0 10 1 V 10 2 s 10 2 VDS Page 4 tp 2003-10-29 BSP603S2L 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 13 BSP603S2L 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS 110 BSP603S2L A 11 10 9 Ptot = 1.8W VGS [V] a 2.8 b c 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0 Ω ih gf e d 90 RDS(on) 80 70 60 50 40 30 g h i VGS [V] = d 3.4 e f 3.6 3.8 g 4.0 h i 4.5 10.0 d d e f g h i ID 8 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 a b c e f 20 10 4 V 5 0 0 2 4 6 8 A 11 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 11 8 Typ. forward transconductance g fs = f(ID); Tj=25°C parameter: gfs 26 A 9 8 S 22 20 18 ID 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 gfs V 16 14 12 10 8 6 4 2 3.5 0 0 2 4 6 8 A ID 12 VGS Page 5 2003-10-29 BSP603S2L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2.6 A, VGS = 10 V 100 BSP603S2L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 2.5 Ω 80 V RDS(on) 70 60 50 40 30 VGS(th) 250 µA 1.5 50 µA 98% 1 typ 20 10 0 -60 °C 0.5 -20 20 60 100 180 0 -60 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 10 2 BSP603S2L pF Ciss 10 3 A 10 1 C Coss 10 2 Crss IF 10 0 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 1 0 5 10 15 20 V VDS 30 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-10-29 BSP603S2L 13 Typ. gate charge VGS = f (QGate) parameter: ID = 5.2 A pulsed 16 BSP603S2L 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 66 BSP603S2L V V 12 V(BR)DSS 0,8 VDS max 62 VGS 10 0,2 VDS max 60 8 58 6 56 4 54 2 52 0 0 5 10 15 20 25 30 35 40 nC 50 50 -60 -20 20 60 100 °C 180 Q Gate Tj Page 7 2003-10-29 BSP603S2L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-10-29