BSS138N_09

BSS138N SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Product Summary V DS R DS(on),max ID 60 3.5 0.23 V Ω A PG-SOT-23 Type BSS138N BSS138N Parameter Package PG-SOT-23 PG-SOT-23 Tape and Reel L6327: 3000 L6433: 10000 Marking SKs SKs Value 0.23 0.18 0.92 Unit A Symbol Conditions ID T A=25 °C T A=70 °C Continuous drain current Pulsed drain current I D,pulse T A=25 °C I D=0.23 A, V DS=48 V, di /dt =200 A/µs, T j,max=150 °C Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage ESD sensitivity ESD sensitivity Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS MIL-STD 883 (HBM) JESD22-A114 (HBM) P tot T j, T stg T A=25 °C ±20 Class 1 (2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 0.6 0.4 0.5 0.35 0.3 0.4 0.25 0.3 g fs [S] 0 1 2 3 4 5 I D [A] 0.2 0.2 0.15 0.1 0.1 0.05 0 0 0.00 0.10 0.20 0.30 0.40 V GS [V] I D [A] Rev. 2.82 page 5 2009-02-11 BSS138N 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.23 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=26 µA parameter: I D 8 2 1.6 6 %98 R DS(on) [Ω ] 4 %98 V GS(th) [V] 1.2 typ 0.8 %2 typ 2 0.4 0 -60 -20 20 60 100 140 0 -60 -20 20 60 100 140 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 100 150 °C, 98% 25 °C 150 °C Ciss 25 °C, 98% 10-1 C [pF] 101 Coss I F [A] 10-2 Crss 100 0 10 20 30 10-3 0 0.4 0.8 1.2 1.6 2 2.4 V DS [V] V SD [V] Rev. 2.82 page 6 2009-02-11 BSS138N 13 Typ. gate charge V GS=f(Q gate); I D=0.23 A pulsed parameter: V DD 12 70 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 30 V 10 65 8 48 V V GS [V] 12 V V BR(DSS) [V] 6 60 4 55 2 0 0 0.2 0.4 0.6 0.8 1 50 -60 -20 20 60 100 140 180 Q gate [nC] T j [°C] Rev. 2.82 page 7 2009-02-11 BSS138N Package Outline: Footprint: Packaging: Dimensions in mm Rev. 2.82 page 8 2009-02-11 BSS138N Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.82 page 9 2009-02-11