BSS138LT1_09

BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features http://onsemi.com • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for • • Low Voltage Applications Miniature SOT−23 Surface Mount Package Saves Board Space Pb−Free Packages are Available 200 mA, 50 V RDS(on) = 3.5 W N−Channel 3 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Operating and Storage Temperature Range Thermal Resistance, Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes, for 10 seconds Symbol VDSS VGS ID Value 50 ± 20 200 800 225 − 55 to 150 556 260 mW °C °C/W °C Unit Vdc Vdc mA IDM PD TJ, Tstg RqJA TL 1 2 3 2 MARKING DIAGRAM SOT−23 CASE 318 STYLE 21 J1 M G G 1 J1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device BSS138LT1 BSS138LT1G BSS138LT3 BSS138LT3G Package SOT−23 SOT−23 (Pb−Free) SOT−23 SOT−23 (Pb−Free) Shipping† 3000 Tape & Reel 3000 Tape & Reel 10,000 Tape & Reel 10,000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2009 February, 2009 − Rev. 5 1 Publication Order Number: BSS138LT1/D BSS138LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc) (VDS = 50 Vdc, VGS = 0 Vdc) Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 1) Gate−Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) Static Drain−to−Source On−Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance Turn−On Delay Time Turn−Off Delay Time (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDS = 25 Vdc, VGS = 0, f = 1 MHz) (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Ciss Coss Crss td(on) td(off) − − − − − 40 12 3.5 − − 50 25 5.0 20 20 ns pF VGS(th) rDS(on) 0.5 − 1.5 Vdc W V(BR)DSS IDSS 50 − − Vdc mAdc Symbol Min Typ Max Unit − − − − − − 0.1 0.5 ±0.1 IGSS mAdc − − 100 5.6 − − 10 3.5 − gfs mmhos SWITCHING CHARACTERISTICS (Note 2) (VDD = 30 Vdc, ID = 0.2 Adc,) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 BSS138LT1 TYPICAL ELECTRICAL CHARACTERISTICS 0.8 0.7 I D , DRAIN CURRENT (AMPS) 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 VGS = 3.25 V VGS = 3.0 V VGS = 2.75 V VGS = 2.5 V I D , DRAIN CURRENT (AMPS) TJ = 25°C VGS = 3.5 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 0.5 1 1.5 2 2.5 3 VDS = 10 V - 55°C 25°C 150°C 3.5 4 4.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 - 55 -5 45 95 145 0.75 - 55 -30 VGS = 4.5 V ID = 0.5 A Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.125 1.25 Figure 2. Transfer Characteristics RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 1.0 mA 1 0.875 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. On−Resistance Variation with Temperature VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10 IDSS, DRAIN-TO-SOURCE LEAKAGE (A) VDS = 40 V TJ = 25°C 8 1.0E-5 Figure 4. Threshold Voltage Variation with Temperature 1.0E-6 150°C 6 1.0E-7 125°C 4 ID = 200 mA 2 1.0E-8 0 0 500 1000 1500 2000 2500 3000 QT, TOTAL GATE CHARGE (pC) 1.0E-9 0 5 10 15 20 25 30 35 40 45 50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Gate Charge Figure 6. IDSS http://onsemi.com 3 BSS138LT1 TYPICAL ELECTRICAL CHARACTERISTICS RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 10 9 8 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) -55°C 25°C VGS = 2.5 V RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 8 VGS = 2.75 V 7 6 5 4 3 2 1 0 0.05 0.1 0.15 0.2 0.25 ID, DRAIN CURRENT (AMPS) 25°C -55°C 150°C 150°C Figure 7. On−Resistance versus Drain Current RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) -55°C 25°C VGS = 4.5 V 150°C 4.5 Figure 8. On−Resistance versus Drain Current VGS = 10 V 4 3.5 3 2.5 2 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 150°C 25°C -55°C 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 9. On−Resistance versus Drain Current Figure 10. On−Resistance versus Drain Current 120 100 1 I D , DIODE CURRENT (AMPS) 0.1 TJ = 150°C 25°C -55°C 80 60 Ciss 0.01 40 20 Coss Crss 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0 5 10 15 20 25 VSD, DIODE FORWARD VOLTAGE (VOLTS) 0.001 Figure 11. Body Diode Forward Voltage Figure 12. Capacitance http://onsemi.com 4 BSS138LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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