BSS138LT3G

BSS138L, BVSS138L Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. www.onsemi.com 200 mA, 50 V RDS(on) = 3.5 W Features • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications N−Channel 3 • Miniature SOT−23 Surface Mount Package Saves Board Space • BVSS Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) 2 Symbol Value Unit Drain−to−Source Voltage VDSS 50 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp ≤ 10 ms) ID 200 800 Rating mA IDM PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C RqJA 556 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes, for 10 seconds 1 2 Total Power Dissipation @ TA = 25°C Thermal Resistance, Junction−to−Ambient MARKING DIAGRAM 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. J1 MG G SOT−23 CASE 318 STYLE 21 1 J1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BSS138LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BVSS138LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel BSS138LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel BVSS138LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 August, 2017 − Rev. 10 1 Publication Order Number: BSS138LT1/D BSS138L, BVSS138L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 50 − − Vdc − − − − − − 0.1 0.5 5.0 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) mAdc Zero Gate Voltage Drain Current (VDS = 25 Vdc, VGS = 0 Vdc, 25°C) (VDS = 50 Vdc, VGS = 0 Vdc, 25°C) (VDS = 50 Vdc, VGS = 0 Vdc, 150°C) IDSS Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±0.1 mAdc Gate−Source Threshold Voltage (VDS = VGS, ID = 1.0 mAdc) VGS(th) 0.85 − 1.5 Vdc Static Drain−to−Source On−Resistance (VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C) (VGS = 5.0 Vdc, ID = 200 mAdc) rDS(on) − − 5.6 − 10 3.5 gfs 100 − − mmhos pF ON CHARACTERISTICS (Note 1) Forward Transconductance (VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz) W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Ciss − 40 50 Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1 MHz) Coss − 12 25 Transfer Capacitance (VDG = 25 Vdc, VGS = 0, f = 1 MHz) Crss − 3.5 5.0 td(on) − − 20 td(off) − − 20 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Turn−Off Delay Time (VDD = 30 Vdc, ID = 0.2 Adc,) ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 BSS138L, BVSS138L TYPICAL ELECTRICAL CHARACTERISTICS 0.8 0.9 VGS = 3.5 V TJ = 25°C I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) VGS = 3.25 V 0.6 VGS = 3.0 V 0.5 VGS = 2.75 V 0.4 VGS = 2.5 V 0.3 0.2 0.1 0 VDS = 10 V 0.8 0.7 - 55°C 0.7 150°C 0.6 0.5 0.4 0.3 0.2 0.1 0 1 0 3 2 4 5 6 7 9 8 10 0 1.5 2 2.5 3.5 3 4 4.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics Figure 1. On−Region Characteristics 2.2 1.25 ID = 1.0 mA 2 Vgs(th) , VARIANCE (VOLTS) VGS = 10 V ID = 0.8 A 1.8 1.6 VGS = 4.5 V ID = 0.5 A 1.4 1.2 1 1.125 1 0.875 0.8 0.6 -55 -5 45 95 0.75 -55 145 -30 -5 45 20 95 70 120 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 3. On−Resistance Variation with Temperature Figure 4. Threshold Voltage Variation with Temperature 145 1.0E-5 10 VDS = 40 V TJ = 25°C IDSS, DRAIN-TO-SOURCE LEAKAGE (A) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1 0.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 25°C 8 6 4 ID = 200 mA 2 1.0E-6 150°C 125°C 1.0E-7 1.0E-8 1.0E-9 0 0 500 1000 1500 2000 2500 0 3000 QT, TOTAL GATE CHARGE (pC) 5 10 15 20 25 30 35 40 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. Gate Charge Figure 6. IDSS www.onsemi.com 3 45 50 BSS138L, BVSS138L 10 VGS = 2.5 V 9 8 150°C 7 6 5 25°C 4 -55°C 3 2 1 0 0.1 0.05 0.2 0.15 0.25 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 8 VGS = 2.75 V 7 150°C 6 5 4 25°C 3 2 -55°C 1 0 RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS) VGS = 4.5 V 150°C 5 4.5 4 3.5 3 25°C 2.5 2 -55°C 1.5 1 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.45 0.4 0.5 4.5 VGS = 10 V 3.5 3 2.5 25°C 2 -55°C 1.5 1 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 ID, DRAIN CURRENT (AMPS) Figure 10. On−Resistance versus Drain Current Figure 9. On−Resistance versus Drain Current 1 120 VGS = 2.75 V TJ = 25°C f = 1 MHz 100 TJ = 150°C 0.1 25°C -55°C C, CAPACITANCE (pF) I D , DIODE CURRENT (AMPS) 150°C 4 ID, DRAIN CURRENT (AMPS) 0.01 80 60 Ciss 40 Coss 20 0.001 0.25 Figure 8. On−Resistance versus Drain Current 6 0 0.2 0.15 ID, DRAIN CURRENT (AMPS) Figure 7. On−Resistance versus Drain Current 5.5 0.1 0.05 ID, DRAIN CURRENT (AMPS) Crss 0 0.2 0.4 0.6 0.8 1.0 0 1.2 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 11. Body Diode Forward Voltage Figure 12. Capacitance www.onsemi.com 4 25 BSS138L, BVSS138L IDS, DRAIN−TO−SOURCE CURRENT (A) TYPICAL ELECTRICAL CHARACTERISTICS 1 TA = 25°C VGS ≤ 10 V 1 ms 10 ms 0.1 0.01 0.001 0.1 dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 13. Safe Operating Area www.onsemi.com 5 100 BSS138L, BVSS138L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D 0.25 3 E 1 2 T HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. DIM A A1 b c D E e L L1 HE T L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C MIN 0.89 0.01 0.37 0.08 2.80 1.20 1.78 0.30 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.14 0.20 2.90 3.04 1.30 1.40 1.90 2.04 0.43 0.55 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.000 0.015 0.003 0.110 0.047 0.070 0.012 0.014 0.083 0° INCHES NOM 0.039 0.002 0.017 0.006 0.114 0.051 0.075 0.017 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.008 0.120 0.055 0.080 0.022 0.027 0.104 10° STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN END VIEW RECOMMENDED SOLDERING FOOTPRINT 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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