BUZ73AH

SIPMOS ® Power Transistor BUZ 73A H • N channel • Enhancement mode • Avalanche-rated . Halogen-free according to IEC61249-2-21 Pin 1 Pin 2 Pin 3 G D S Type VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package Pb-free BUZ 73 A PG-TO-220-3 yes Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID A 5.5 IDpuls Pulsed drain current TC = 25 ˚C 22 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 7 6.5 mJ 120 VGS Ptot Gate source voltage Power dissipation TC = 25 ˚C ± 20 40 V W Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E K/W 55 / 150 / 56 Rev. 2.4 Page 1 2009-11-10 BUZ 73A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 V GS(th) - - Gate threshold voltage V GS=VDS, ID = 1 mA 2.1 IDSS 3 4 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C - 0.1 1 IGSS 10 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance V GS = 10 V, ID = 4.5 A Ω 0.5 0.6 Rev. 2.4 Page 2 2009-11-10 BUZ 73A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 4.5 A gfs S 3 Ciss 4.2 pF Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss 400 530 Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Crss 85 130 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 45 70 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tr 10 15 Rise time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω td(off) 40 60 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω tf 55 75 Fall time V DD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Ω - 30 40 Rev. 2.4 Page 3 2009-11-10 BUZ 73A H Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A ISM - 5.5 Inverse diode direct current,pulsed TC = 25 ˚C V SD - 22 V Inverse diode forward voltage VGS = 0 V, IF = 14 A trr 1.3 1.7 ns Reverse recovery time V R = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 200 µC Reverse recovery charge V R = 100 V, IF=lS, diF/dt = 100 A/µs - 0.6 - Rev. 2.4 Page 4 2009-11-10 BUZ 73A H Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 6.0 45 A W 5.0 Ptot 35 ID 4.5 30 4.0 3.5 25 3.0 20 2.5 15 2.0 1.5 10 1.0 5 0.5 0 0 0.0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID 10 1 DS (o n) t = 36.0µs p ZthJC /I 100 µs D 10 0 =V DS 1 ms 10 -1 D = 0.50 R 0.20 10 0 10 ms 0.10 10 -2 single pulse 0.05 0.02 0.01 DC 10 -1 0 10 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 -1 0 VDS tp Rev. 2.4 Page 5 2009-11-10 BUZ 73A H Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 13 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.8 a Ptot = 40W A l b c d kj i h g f VGS [V] a 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 11 Ω RDS (on) 1.4 ID 10 e b c d 9 1.2 1.0 8 e 7 df g h 6 0.8 e 5 c i j 8.0 9.0 4 k 10.0 l 20.0 0.6 k f g h ij 3 b 0.4 2 1 a 0.2 VGS [V] = a 4.5 4.0 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 0 0 h i j k 8.0 9.0 10.0 20.0 0.0 2 4 6 8 10 12 V 16 0 2 4 6 8 A 11 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 13 parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 6.0 A 11 ID S 5.0 gfs 10 9 8 4.5 4.0 3.5 7 3.0 6 5 4 2.5 2.0 3 1.5 1.0 2 1 0.5 0 0.0 0 1 2 3 4 5 6 7 8 V VGS 10 0 2 4 6 8 A ID 12 Rev. 2.4 Page 6 2009-11-10 BUZ 73A H Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 4.5 A, VGS = 10 V 1.9 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 Ω 1.6 V 98% 4.0 RDS (on) 1.4 VGS(th) 3.6 3.2 1.2 typ 2.8 1.0 2.4 2% 0.8 98% 2.0 typ 0.6 1.6 1.2 0.4 0.8 0.2 0.0 -60 0.4 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 nF C A IF 10 0 10 1 Ciss 10 -1 Coss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Crss Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 -2 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Rev. 2.4 Page 7 2009-11-10 BUZ 73A H Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH 130 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 14 A 16 mJ 110 V EAS 100 VGS 12 90 80 10 0,2 VDS max 70 8 0,8 VDS max 60 50 6 40 30 4 20 2 10 0 20 0 40 60 80 100 120 ˚C 160 0 4 8 12 16 20 24 28 32 nC 38 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Rev. 2.4 Page 8 2009-11-10 BUZ 73A H Package Drawing: TO220-3 Rev. 2.4 Page 9 2009-11-10 BUZ 73A H Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. (www.infineon.com). Rev. 2.4 Page 10 2009-11-10