BUZ73AL

SIPMOS ® Power Transistor BUZ 73AL • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 Pin 3 G Type D Ordering Code S VDS 200 V ID 5.5 A RDS(on) 0.6 Ω Package BUZ 73 AL TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 37 ˚C ID A 5.5 Pulsed drain current TC = 25 ˚C IDpuls 22 IAR EAR EAS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 7 A, VDD = 50 V, RGS = 25 Ω L = 3.67 mH, Tj = 25 ˚C 7 6.5 mJ 120 VGS Gate source voltage ESD-Sensitivity HBM as per MIL-STD 883 Power dissipation TC = 25 ˚C ± 20 Class 1 V Ptot W 40 Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 ˚C ≤ 3.1 75 E 55 / 150 / 56 K/W Data Sheet 1 05.99 BUZ 73AL Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C V (BR)DSS V 200 - Gate threshold voltage VGS=VDS, ID = 1 mA V GS(th) 1.2 IDSS 1.6 2 µA Zero gate voltage drain current VDS = 200 V, V GS = 0 V, Tj = 25 ˚C VDS = 200 V, V GS = 0 V, Tj = 125 ˚C IGSS 0.1 10 1 100 nA Gate-source leakage current VGS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-resistance VGS = 5 V, ID = 3.5 A Ω 0.5 0.6 Data Sheet 2 05.99 BUZ 73AL Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 3.5 A gfs S 5 6.5 pF 630 840 Input capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 120 200 Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz td(on) 60 90 ns Turn-on delay time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω tr 15 20 Rise time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω td(off) 60 90 Turn-off delay time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω tf 100 130 Fall time VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Ω - 40 50 Data Sheet 3 05.99 BUZ 73AL Electrical Characteristics, at Tj = 25˚C, unless otherwise specified Parameter Symbol min. Reverse Diode Values typ. max. Unit Inverse diode continuous forward current TC = 25 ˚C IS A 5.5 Inverse diode direct current,pulsed TC = 25 ˚C ISM V SD - 22 V Inverse diode forward voltage VGS = 0 V, IF = 14 A trr 1.1 1.7 ns Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/µs Qrr 140 µC Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/µs - 0.7 - Data Sheet 4 05.99 BUZ 73AL Power dissipation Ptot = ƒ(TC) Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 6.0 A 5.0 45 W Ptot 35 30 25 20 15 10 5 0 0 ID 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 40 60 80 100 120 ˚C 160 0 20 40 60 80 100 120 ˚C 160 TC TC Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25˚C 10 2 Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 K/W A ID D t = 24.0µs p ZthJC 10 0 DS (o n) =V DS 10 1 100 µs /I 1 ms 10 -1 D = 0.50 0.20 10 0 10 ms R 0.10 10 -2 0.05 0.02 single pulse DC 0.01 10 -1 10 0 10 1 10 2 V 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Data Sheet 5 05.99 BUZ 73AL Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 13 A 11 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: VGS 1.8 a b Ptot = 40W l jg kih e f d VGS [V] a 2.0 b c d 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 Ω RDS (on) 1.4 1.2 1.0 0.8 c ID 10 9 8 7 c e f g h i j 6 5 4 3 b k l 0.6 e i g f dh kj 0.4 0.2 VGS [V] = a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0 2 1 0 0 a 2 4 6 8 10 12 V 16 0.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 7.5 VDS ID Typ. transfer characteristics ID = f (V GS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 18 A ID parameter: tp = 80 µs, V DS≥2 x ID x RDS(on)max 12 S 10 14 12 10 8 6 4 2 0 0 gfs 9 8 7 6 5 4 3 2 1 0 1 2 3 4 5 6 7 8 V VGS 10 0 2 4 6 8 10 12 ID A 15 Data Sheet 6 05.99 BUZ 73AL Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 3.5 A, VGS = 5 V 1.9 Gate threshold voltage VGS (th) = ƒ(Tj ) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 Ω 1.6 RDS (on) 1.4 VGS(th) 3.6 3.2 1.2 2.8 1.0 0.8 0.6 0.4 0.8 0.2 0.0 -60 0.4 -20 20 60 100 ˚C 160 0.0 -60 -20 20 60 100 ˚C 160 2.4 98% typ 98% 2.0 typ 1.6 2% 1.2 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs 10 2 pF C A IF 10 3 Ciss 10 1 10 2 Coss Crss 10 0 Tj = 25 ˚C typ Tj = 150 ˚C typ Tj = 25 ˚C (98%) Tj = 150 ˚C (98%) 10 1 0 10 -1 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BUZ 73AL Avalanche energy EAS = ƒ(Tj) parameter: ID = 7 A, VDD = 50 V RGS = 25 Ω, L = 3.67 mH 130 mJ 110 Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 63 A 16 V EAS 100 90 80 70 VGS 12 0,2 VDS max 0,8 V DS max 10 8 60 50 40 30 20 10 0 20 0 40 60 80 100 120 ˚C 160 0 10 20 30 40 50 60 70 80 nC 100 4 6 2 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 240 V 230 V(BR)DSS 225 220 215 210 205 200 195 190 185 180 -60 -20 20 60 100 ˚C 160 Tj Data Sheet 8 05.99