SPI80N06S-08

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS® Power-Transistor Features • N-channel - Normal Level -Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Avalanche test • Repetive Avalanche up to Tjmax = 175 °C • dv /dt rated Type SPB80N06S-08 SPI80N06S-08 SPP80N06S-08 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code PG-TO263-3-2 Product Summary V DS R DS(on),max (SMD version) ID 55 7.7 80 V mΩ A Green Package PG-TO262-3-1 PG-TO220-3-1 VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω Marking SP0000-84808 1N0608 T C=25 °C, V GS=10 V SP0000-82518 1N0608 T C=100 °C, V GS=10 V SP0000-84809 1N0608 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current1) ID T C=25 °C, V GS=10 V 80 A T C=100 °C, V GS=10 V Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, periodic2) 2) 80 320 700 30 mJ I D,pulse E AS E AR T C=25 °C I D=80 A, R GS=25 Ω, V DD=25 V T j=175 °C I D=80 A, V DS=40 V, di /dt =200 A/µs, T j,max=175 °C Reverse diode dv /dt Gate source voltage Power dissipation dv /dt 6 kV/µs V GS P tot T j, T stg T C=25 °C ±20 300 -55 ... +175 55/175/56 page 1 V W °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=240 µA V DS=25 V, V GS=0 V, T j=25 °C V DS=25 V, V GS=0 V, T j=150 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A SMD version Transconductance2) footnote on page 3 g fs |V DS|>2|I D|R DS(on)max, I D=80 A 55 2.1 3.0 0.1 4 1 µA V 0.38 0.5 62 62 40 K/W Values typ. max. Unit - 10 10 6.5 6.2 100 100 8 7.7 nA mΩ - 73 - S Rev. 1.0 page 2 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode2) Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD V GS=0 V, I F=80 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs T C=25 °C 0.9 320 1.3 V 80 A Q gs Q gd Qg V plateau V DD=44 V, I D=80 A, V GS=0 to 10 V 19 62 125 5.4 187 V nC C iss C oss Crss t d(on) tr t d(off) tf VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω V GS=0 V, V DS=25 V, f =1 MHz 3660 1075 540 22 53 54 32 ns pF Values typ. max. Unit Reverse recovery time t rr - 105 ns Reverse recovery charge Q rr - 30 - nC 1) Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 132A at 25°C. For detailed information see Application Note APPS071E at www.infineon.com/optimos 2) 3) Defined by design not subjected to production test. Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS=10 V 350 100 300 80 250 60 P tot [W] 200 150 I D [A] 40 20 50 0 0 50 100 150 200 0 0 50 100 150 200 100 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 1000 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 10 µs 100 µs 1 ms 100 100 I D [A] DC Z thJC [K/W] 10 ms 0.5 0.2 0.1 0.05 0.02 0.01 10-1 10 10-2 single pulse 1 0.1 1 10 100 10-3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 160 V8 6.5 V 6V V7 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 25 140 V 10 20 V 4.5 V5 V 5.5 120 R DS(on) [mΩ ] 100 5.5 V 15 I D [A] 80 V6 60 10 V 6.5 V7 V8 V 10 5V 40 4.5 V 5 20 0 0 1 2 3 0 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 160 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 80 140 70 120 60 100 50 80 g fs [S] 175 °C 25 °C I D [A] 40 60 30 40 20 20 10 0 0 2 4 6 8 0 0 20 40 60 80 V GS [V] I D [A] Rev. 1.0 page 5 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 9 Typical Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 4 16 14 12 10 8 6 1.5 4 2 0 -60 -20 20 60 100 140 180 1 3.5 3 µA 240 µA 1200 R DS(on) [mΩ ] V GS(th) [V] 2.5 2 0.5 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 Ciss Coss C [pF] 103 Crss I F [A] 25 °C 175 °C 102 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 V DS [V] V SD [V] Rev. 1.0 page 6 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 13 Typ. Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 100 14 Typ. Avalanche Energy E AS=f(T j); VDD = 25 V; RGS=25 Ω parameter: I D 800 80 A C °25 C °100 700 600 500 C °150 10 E AS [mJ] I AV [A] 400 300 200 100 0 1 1 10 100 1000 0 50 100 150 200 t AV [µs] T j [°C] 15 Typ. gate charge V GS=f(Q gate); I D=80 A pulsed parameter: V DD 12 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 µA 64 V 11 V 44 10 62 60 8 V BR(DSS) [V] V GS [V] 58 6 56 4 54 2 52 0 0 20 40 60 80 100 120 140 50 -60 -20 20 60 100 140 180 Q gate [nC] T j [°C] Rev. 1.0 page 7 2005-06-28 SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 Published by Infineon Technologies AG St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 2004 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2005-06-28