SPI08N80C3

SPI08N80C3 CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 0.65 45 V Ω nC PG-TO262-3 CoolMOSTM 800V designed for: • Industrial application with high DC bulk voltage • Switching Application ( i.e. active clamp forward ) Type SPI08N80C3 Package PG-TO262-3 Marking 08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0…640 V static AC (f >1 Hz) Power dissipation Operating and storage temperature P tot T j, T stg T C=25 °C T C=25 °C I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V Value 8 5.1 24 340 0.2 8 50 ±20 ±30 104 -55 ... 150 W °C A V/ns V mJ Unit A Rev. 2.9 page 1 2008-10-15 SPI08N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C 24 4 V/ns Value 8 Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA leaded 1.2 62 K/W Soldering temperature, T sold wave soldering only allowed at leads 1.6 mm (0.063 in.) from case for 10s - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=250 µA V (BR)DS V GS(th) I DSS V GS=0 V, I D=8 A V DS=V GS, I D=0.47 mA V DS=800 V, V GS=0 V, T j=25 °C V DS=800 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=5.1 A, T j=25 °C V GS=10 V, I D=5.1 A, T j=150 °C Gate resistance RG f =1 MHz, open drain 800 2.1 870 3 3.9 20 µA V - 100 0.56 100 0.65 nA Ω - 1.5 1.2 Ω Rev. 2.9 page 2 2008-10-15 SPI08N80C3 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance C iss C oss V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=0/10 V, I D=8 A, R G=10 ? , T j=25 °C 99 25 15 72 10 ns 1100 46 36 pF Values typ. max. Unit Effective output capacitance, energy C o(er) related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) C o(tr) t d(on) tr t d(off) tf Q gs Q gd Qg V plateau V DD=640 V, I D=8 A, V GS=0 to 10 V - 6 22 45 5.5 60 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=I S=8 A, T j=25 °C - 1 550 7 24 1.2 - V ns µC A V R=400 V, I F=I S=8 A, di F/dt =100 A/µs - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISD=ID, di/dt=400A/µs, VDClink = 400V, Vpeak