SPI80N10L

Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS RDS(on) ID 100 14 80 P-TO220-3-1 V A Type SPP80N10L SPB80N10L SPI80N10L Package P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 Ordering Code Q67042-S4173 Q67042-S4171 Q67042-S4172 Marking 80N10L 80N10L 80N10L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TC=25°C TC=100°C Symbol ID Value 80 58 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg 320 700 25 6 ±20 250 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS =80A, VDS =0V, di/dt=200A/µs Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1
ID =80 A , VDD =25V, RGS =25 2002-08-14
      m Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) SPI80N10L SPP80N10L,SPB80N10L Symbol min. RthJC RthJA RthJA - Values typ. max. 0.6 62.5 62 40 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =2mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 100 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current VDS =100V, VGS =0V, Tj =25°C VDS =100V, VGS =0V, Tj =150°C µA 0.1 10 15 11 1 100 100 24 14 nA m Gate-source leakage current VGS =20V, VDS=0V VGS =4.5V, ID=58A Drain-source on-state resistance VGS =10V, ID =58A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-08-14
Drain-source on-state resistance Preliminary data SPI80N10L SPP80N10L,SPB80N10L Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics ID =58A Symbol Conditions min. Values typ. 52 3630 640 345 14 60 82 20 max. 4540 800 430 21 90 123 30 Unit Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =50V, VGS=10V, Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =80A VR =50V, IF =lS , diF /dt=100A/µs Qgs Qgd Qg VDD =80V, ID =80A VDD =80V, ID =80A, VGS =0 to 10V V(plateau) VDD =80V, ID=80A IS TC=25°C Page 3
ID =80A, RG =1.6  Transconductance gfs VDS 2*ID *RDS(on)max , 26 - S pF ns - 14 65 160 4.2 21 98 240 - nC V - 0.9 95 330 80 320 1.3 140 500 A V ns nC 2002-08-14 Preliminary data SPI80N10L SPP80N10L,SPB80N10L 1 Power dissipation Ptot = f (TC ) SPP80N10L 2 Drain current ID = f (TC ) parameter: VGS 10 V 90 SPP80N10L 280 W 240 220 200 A 70 60 Ptot 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 °C 190 ID 180 50 40 30 20 10 0 0 20 40 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N10L 4 Max. transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 SPP80N10L K/W A tp = 15.0 µs 10 0 10 2 Z thJC 10 -1 ID 100 µs /I D =V 10 -2 D = 0.50 0.20 1 ms 10 1 DS (on ) DS 10 -3 R 10 ms 10 -4 single pulse DC 10 0 -1 10 10 -5 -7 10 10 0 10 1 10 2 V 10 3 10 -6 VDS Page 4  60 80 100 120 140 160 °C 190 TC 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2002-08-14 Preliminary data SPI80N10L SPP80N10L,SPB80N10L 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs 190 SPP80N10L 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 80 SPP80N10L Ptot = 250W l k ji h g f e VGS [V] a 2.5 b 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 A 160 140 b c d e c d ID 120 100 80 60 40 20 a e RDS(on) d f g h i c j k l b 0 0 1 2 3 4 V 6 VDS 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs 70 A 60 55 8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs 60 50 ID g fs 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS Page 5
60 50 40 30 20 10 VGS [V] = b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 6.5 j 7.0 m l f h ig jk k l 8.0 10.0 0 0 20 40 60 80 100 120 140 A 170 ID  S 50 45 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A ID 60 2002-08-14 Preliminary data SPI80N10L SPP80N10L,SPB80N10L 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 58 A, VGS = 4.5 V 110 SPP80N10L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 3 RDS(on) 80 70 60 VGS(th) 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 C 10 3 Coss Crss IF
90 50 40 98% 30 20 typ 10 0 -60 -20 20 60 100 140 °C m V 2 1.5 Id=2mA 1 Id=250uA 0.5 200 0 -60 -30 0 30 60 90 120 Tj °C Tj 180 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 µs 10 3 SPP80N10L A pF Ciss 10 2 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 25 30 V 40 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2002-08-14 Preliminary data SPI80N10L SPP80N10L,SPB80N10L 13 Typ. avalanche energy EAS = f (Tj ) 700 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 80 A pulsed 16 SPP80N10L mJ V 600 550 12 E AS 500 450 400 350 300 250 200 4 150 100 50 0 25 45 65 85 105 125 145 2 6 8 VGS °C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP80N10L 120 V V (BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C Tj Page 7
200 par.: ID = 80 A , VDD = 25 V, RGS = 25 10 0,2 VDS max 0,8 VDS max 0 0 40 80 120 160 200 nC 260 QGate 2002-08-14 Preliminary data SPI80N10L SPP80N10L,SPB80N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N10L, BSPB80N10L and BSPI80N10L, for simplicity the device is referred to by the term SPP80N10L, SPB80N10L and SPI80N10L throughout this documentation Page 8 2002-08-14