SPI80N10L

SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L SPI80N10L PG-TO262-3-1 Q67042-S4172 80N10L V RDS(on) 14 m
ID 80 A PG-TO262-3-1 Type 100 PG-TO220-3-1 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC=25°C 80 TC=100°C 58 ID puls 320 EAS 700 Avalanche energy, periodic limited by Tjmax EAR 25 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 250 W -55... +175 °C Pulsed drain current TC=25°C Avalanche energy, single pulse ID =80 A , VDD =25V, RGS =25
mJ kV/µs IS =80A, VDS =0V, di/dt=200A/µs TC=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Rev. 2.1 55/175/56 Page 1 2005-02-15 SPI80N10L SPP80N10L Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - ambient, leaded RthJA - - 62.5 SMD version, device on PCB: RthJA - - 62 - - 40 @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =2mA Gate threshold voltage, VGS = VDS ID = 2 mA Zero gate voltage drain current µA IDSS VDS =100V, VGS =0V, Tj =25°C - 0.1 1 VDS =100V, VGS =0V, Tj =150°C - - 100 IGSS - 10 100 nA RDS(on) - 15 24 m
RDS(on) - 11 14 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=58A Drain-source on-state resistance VGS =10V, ID =58A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Page 2 2005-02-15 SPI80N10L SPP80N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 26 52 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =58A Input capacitance Ciss VGS =0V, VDS =25V, - 3630 4540 Output capacitance Coss f=1MHz - 640 800 Reverse transfer capacitance Crss - 345 430 Turn-on delay time td(on) - 14 21 Rise time tr - 60 90 Turn-off delay time td(off) - 82 123 Fall time tf - 20 30 - 14 21 - 65 98 - 160 240 V(plateau) VDD =80V, ID=80A - 4.2 - V IS - - 80 A - - 320 VDD =50V, VGS=10V, ID =80A, RG =1.6
ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =80A VDD =80V, ID =80A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =80A - 0.9 1.3 V Reverse recovery time trr VR =50V, IF =lS , - 95 140 ns Reverse recovery charge Qrr diF /dt=100A/µs - 330 500 nC Rev. 2.1 Page 3 2005-02-15 SPI80N10L SPP80N10L 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) parameter: VGS  10 V SPP80N10L 90 280 W SPP80N10L A 240 220 70 60 180 ID Ptot 200 160 50 140 40 120 100 30 80 20 60 40 10 20 0 0 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 °C parameter : D = tp /T 10 3 SPP80N10L 10 1 SPP80N10L K/W A tp = 15.0µs Z thJC 10 0 ID 10 2 /I D 100 µs 10 -1 =V DS 10 -2 (on ) D = 0.50 DS 0.20 R 10 1 10 1 ms -3 0.10 0.05 0.02 10 ms 10 -4 single pulse 10 -5 -7 10 10 0.01 DC 10 0 -1 10 10 0 10 1 10 2 V 10 3 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Rev. 2.1 -6 Page 4 2005-02-15 SPI80N10L SPP80N10L 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25°C RDS(on) = f (ID ) parameter: tp = 80 µs parameter: VGS 190 SPP80N10L 80 Ptot = 250W A f 160 e VGS [V] a 2.5 ID 140 120 d 100 80 c 60 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 b m
RDS(on) l k ji h g SPP80N10L c d e 60 50 40 30 20 40 b 10 VGS [V] = 20 b 3.0 a 0 0 1 2 3 4 V 0 0 6 c 3.5 20 l d 4.0 e f 4.5 5.0 40 60 g 5.5 80 h i 6.0 6.5 100 j 7.0 120 f hj i g k k l 8.0 10.0 140 A 170 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs gfs = f(ID ); Tj=25°C parameter: gfs 60 70 A S 60 50 55 45 40 45 g fs ID 50 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 20 30 40 A 60 ID VGS Rev. 2.1 10 Page 5 2005-02-15 SPI80N10L SPP80N10L 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 58 A, VGS = 4.5 V parameter: VGS = VDS 110 SPP80N10L 3 m
V VGS(th) RDS(on) 90 80 70 2 60 Id=2mA 1.5 50 40 Id=250uA 1 98% 30 20 0.5 typ 10 0 -60 -20 20 60 100 140 °C 0 -60 200 -30 0 30 60 90 120 Tj °C Tj 180 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 µs 10 4 10 3 SPP80N10L A Ciss pF C IF 10 2 10 3 Coss 10 1 Tj = 25 °C typ Crss Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 2 0 5 10 15 20 25 30 V 10 0 0 40 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Rev. 2.1 0.4 Page 6 2005-02-15 SPI80N10L SPP80N10L 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 80 A , VDD = 25 V, RGS = 25
parameter: ID = 80 A pulsed 16 700 SPP80N10L mJ V 600 550 VGS E AS 12 500 450 0,2 VDS max 10 400 0,8 VDS max 8 350 300 6 250 200 4 150 100 2 50 0 25 45 65 85 105 125 145 0 0 °C 185 Tj 40 80 120 160 200 nC 260 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) SPP80N10L 120 V (BR)DSS V 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 140 °C 200 Tj Rev. 2.1 Page 7 2005-02-15 SPI80N10L SPP80N10L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N10L, BSPB80N10L and BSPI80N10L, for simplicity the device is referred to by the term SPP80N10L, SPB80N10L and SPI80N10L throughout this documentation Rev. 2.1 Page 8 2005-02-15