SPI80N04S2-H4

SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS R DS(on) ID P- TO262 -3-1 P- TO263 -3-2 40 4 80 P- TO220 -3-1 V mΩ A • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated Type SPP80N04S2-H4 SPB80N04S2-H4 SPI80N04S2-H4 Package P- TO220 -3-1 P- TO263 -3-2 P- TO262 -3-1 Ordering Code Q67060-S6014 Q67060-S6013 Q67060-S6014 Marking 2N04H4 2N04H4 2N04H4 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 80 80 320 660 25 6 ±20 300 -55... +175 55/175/56 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg Avalanche energy, single pulse ID=80 A , V DD=25V, RGS=25Ω mJ Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=80A, VDS=32V, di/dt=200A/µs, T jmax=175°C kV/µs V W °C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.35 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 40 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V DS ID=250µA Zero gate voltage drain current V DS=40V, VGS=0V, Tj=25°C V DS=40V, VGS=0V, Tj=125°C 2) µA 0.01 1 1 3.4 1 100 100 4 nA mΩ Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=10V, I D=80A 1Current limited by bondwire ; with an RthJC = 0.5K/W the chip is able to carry ID= 200A at 25°C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =32V, ID =80A, VGS =0 to 10V VDD =32V, ID =80A Symbol Conditions min. Values typ. 105 4430 1580 400 14 36 46 35 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf VDS ≥2*ID *RDS(on)max, ID =80A VGS =0V, VDS =25V, f=1MHz 53 - S 5890 pF 2100 600 21 54 69 53 ns VDD =20V, VGS =10V, ID =80A, RG =1.3Ω - 22 47 111 5.2 29 70 148 - nC V(plateau) VDD = 32 V , ID =80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF =80A VR =20V, IF =lS , diF /dt=100A/µs IS TC=25°C - 0.9 195 370 80 320 1.3 240 460 A V ns nC Page 3 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 1 Power dissipation Ptot = f (TC) parameter: VGS≥ 6 V 320 SPP80N04S2-H4 2 Drain current ID = f (T C) parameter: VGS≥ 10 V 90 SPP80N04S2-H4 W A 70 240 P tot 60 200 ID 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 °C 190 160 120 80 40 0 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 °C 10 3 SPP80N04S2-H4 4 Max. transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 SPP80N04S2-H4 K/W A D t = 29.0µs p 10 DS (on ) = V DS /I 0 ID R 10 2 Z thJC 100 µs 10 -1 1 ms 10 -2 D = 0.50 0.20 10 1 -3 10 0.10 0.05 10 -4 single pulse 0.02 0.01 10 0 10 -1 10 0 10 1 V 10 2 10 -5 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 5 Typ. output characteristic ID = f (V DS); T j=25°C parameter: tp = 80 µs 190 SPP80N04S2-H4 6 Typ. drain-source on resistance RDS(on) = f (I D) parameter: VGS 13 SPP80N04S2-H4 Ptot = 300W hg f VGS [V] A 160 140 e a b c d 4.0 4.5 5.0 5.5 6.0 6.5 7.0 10.0 Ω 11 10 d e R DS(on) 9 8 7 6 5 f g h ID 120 100 80 60 40 20 b c e f g d h 4 3 2 1 VGS [V] = d 5.5 e 6.0 f 6.5 g h 7.0 10.0 0 0 0.5 1 1.5 2 2.5 3 3.5 a 4 V 0 5 0 20 40 60 80 100 120 140 A 180 VDS ID 7 Typ. transfer characteristics ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 160 8 Typ. forward transconductance g fs = f(I D); T j=25°C parameter: g fs 140 A S 120 100 100 g fs 80 60 40 20 ID 80 60 40 20 0 0 1 2 3 4 V VGS 0 6 0 20 40 60 80 100 120 A 160 ID Page 5 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V 12 SPP80N04S2-H4 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 3.5 Ω V 10 1.25 mA 250 µA R DS(on) V GS(th) 98% typ 140 °C 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 200 2.5 2 1.5 1 0.5 0 -60 -20 20 60 100 °C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 5 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 µs 10 3 SPP80N04S2-H4 pF A 10 4 10 2 C iss C oss 10 3 IF 10 1 C C rss T j = 25 °C typ T j = 175 °C typ T j = 25 °C (98%) T j = 175 °C (98%) 10 2 10 5 10 15 20 0 0 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V DS VSD Page 6 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 13 Typ. avalanche energy E AS = f (T j) par.: I D = 80 A , V DD = 25 V, R GS = 25 Ω 700 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPP80N04S2-H4 mJ V 600 550 12 E AS 500 VGS 450 400 350 300 250 200 10 0,2 VDS max 0,8 VDS max 8 6 4 150 100 50 0 25 45 65 85 105 125 145 2 °C 185 Tj 0 0 20 40 60 80 100 120 140 nC 170 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 48 SPP80N04S2-H4 V 46 V(BR)DSS 45 44 43 42 41 40 39 38 37 36 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-08 SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N04S2-H4 and BSPB80N04S2-H4, for simplicity the device is referred to by the term SPP80N04S2-H4 and SPB80N04S2-H4 throughout this documentation. Page 8 2003-05-08